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Register a new userTheory of Spin Injection in Two-dimensional Metals with Proximity-Induced Spin-Orbit Coupling
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Added by
Miguel A. Cazalilla
Publication date
2019
fields
Physics
and research's language is
English
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Spin injection is a powerful experimental probe into a wealth of nonequilibrium spin-dependent phenomena displayed by materials with spin-orbit coupling (SOC). Here, we develop a theory of coupled spin-charge diffusive transport in two-dimensional spin-valve devices. The theory describes a realistic proximity-induced SOC with both spatially uniform and random components of the SOC due to adatoms and imperfections, and applies to the two dimensional electron gases found in two-dimensional materials and van der Walls heterostructures. The various charge-to-spin conversion mechanisms known to be present in diffusive metals, including the spin Hall effect and several mechanisms contributing current-induced spin polarization are accounted for. Our analysis shows that the dominant conversion mechanisms can be discerned by analyzing the nonlocal resistance of the spin-valve for different polarizations of the injected spins and as a function of the applied in-plane magnetic field.
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We use microscopic linear response theory to derive a set of equations that provide a complete description of coupled spin and charge diffusive transport in a two-dimensional electron gas (2DEG) with the Rashba spin-orbit (SO) interaction. These equations capture a number of interrelated effects including spin accumulation and diffusion, Dyakonov-Perel spin relaxation, magnetoelectric, and spin-galvanic effects. They can be used under very general circumstances to model transport experiments in 2DEG systems that involve either electrical or optical spin injection. We comment on the relationship between these equations and the exact spin and charge density operator equations of motion. As an example of the application of our equations, we consider a simple electrical spin injection experiment and show that a voltage will develop between two ferromagnetic contacts if a spin-polarized current is injected into a 2DEG, that depends on the relative magnetization orientation of the contacts. This voltage is present even when the separation between the contacts is larger than the spin diffusion length.
We have experimentally studied the spin-induced time reversal symmetry (TRS) breaking as a function of the relative strength of the Zeeman energy (E_Z) and the Rashba spin-orbit interaction energy (E_SOI), in InGaAs-based 2D electron gases. We find that the TRS breaking saturates when E_Z becomes comparable to E_SOI. Moreover, we show that the spin-induced TRS breaking mechanism is a universal function of the ratio E_Z/E_SOI, within the experimental accuracy.
We study the anomalous proximity effect in diffusive normal metal (DN)/unconventional superconductor junctions, where the local density of states (LDOS) in the DN has a zero-energy peak due to the penetration of the odd-frequency spin-triplet $s$-wave pairing. In this study, we consider a two-dimensional unconventional superconductor on the substrate in the presence of a Rashba spin-orbit coupling (RSOC) $lambda$, where the Rashba vector is parallel to the $z$-direction. The anomalous proximity effect, originally predicted in spin-triplet $p$-wave superconductor junctions, is sensitive to the RSOC. It disappears with the increase of $lambda$. On the other hand, the anomalous proximity effect can be switched on by the large $lambda$ values in the spin-singlet $d_{xy}$-wave superconductor junctions. The resulting zero-energy LDOS and the magnitude of the odd-frequency spin-triplet $s$-wave pair amplitude increase with the increase of $lambda$.
We uncover two anomalous features in the nonlocal transport behavior of two-dimensional metallic materials with spin-orbit coupling. Firstly, the nonlocal resistance can have negative values and oscillate with distance, even in the absence of a magnetic field. Secondly, the oscillations of the nonlocal resistance under an applied in-plane magnetic field (Hanle effect) can be asymmetric under field reversal. Both features are produced by direct magnetoelectric coupling, which is possible in materials with broken inversion symmetry but was not included in previous spin diffusion theories of nonlocal transport. These effects can be used to identify the relative contributions of different spin-charge conversion mechanisms. They should be observable in adatom-functionalized graphene, and may provide the reason for discrepancies in recent nonlocal transport experiments on graphene.
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $gamma$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $mathbf{kcdot p}$ tight-binding model, fully parameterized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.
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