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Register a new userQuadratic to linear magnetoresistance tuning in TmB4
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The change of a materials electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmanns theory predicts a quadratic growth in magnetoresistance (MR) at low B, and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topological insulators, two-dimensional electron gas (2DEG) show positive, non-saturating linear magnetoresistance (LMR). However, observation of LMR in single crystals of a good metal is rare. Here we present low-temperature, angle dependent magnetotransport in single crystals of the antiferromagnetic metal, TmB4. We observe large, positive and anisotropic MR(B), which can be tuned from quadratic to linear by changing the direction of the applied field. In view of the fact that isotropic, single crystalline metals with large Fermi surface (FS) are not expected to exhibit LMR, we attribute our observations to the anisotropic FS topology of TmB4. Furthermore, the linear MR is found to be temperature-independent, suggestive of quantum mechanical origin.
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Multiple mechanisms for extremely large magnetoresistance (XMR) found in many topologically nontrivial/trivial semimetals have been theoretically proposed, but experimentally it is unclear which mechanism is responsible in a particular sample. In this article, by the combination of band structure calculations, numerical simulations of magnetoresistance (MR), Hall resistivity and de Haas-van Alphen (dHvA) oscillation measurements, we studied the MR anisotropy of SiP$_{2}$ which is verified to be a topologically trivial, incomplete compensation semimetal. It was found that as magnetic field, $H$, is applied along the $a$ axis, the MR exhibits an unsaturated nearly linear $H$ dependence, which was argued to arise from incomplete carriers compensation. For the $H$ $parallel$ [101] orientation, an unsaturated nearly quadratic $H$ dependence of MR up to 5.88 $times$ 10$^{4}$$%$ (at 1.8 K, 31.2 T) and field-induced up-turn behavior in resistivity were observed, which was suggested due to the existence of hole open orbits extending along the $k_{x}$ direction. Good agreement of the experimental results with the simulations based on the calculated Fermi surface (FS) indicates that the topology of FS plays an important role in its MR.
The helimagnet FeP is part of a family of binary pnictide materials with the MnP-type structure which share a nonsymmorphic crystal symmetry that preserves generic band structure characteristics through changes in elemental composition. It shows many similarities, including in its magnetic order, to isostructural CrAs and MnP, two compounds that are driven to superconductivity under applied pressure. Here we present a series of high magnetic field experiments on high quality single crystals of FeP, showing that the resistance not only increases without saturation by up to several hundred times its zero field value by 35 T, but that it also exhibits an anomalously linear field dependence over the entire field range when the field is aligned precisely along the crystallographic c-axis. A close comparison of quantum oscillation frequencies to electronic structure calculations links this orientation to a semi-Dirac point in the band structure which disperses linearly in a single direction in the plane perpendicular to field, a symmetry-protected feature of this entire material family. We show that the two striking features of MR-large amplitude and linear field dependence-arise separately in this system, with the latter likely due to a combination of ordered magnetism and topological band structure.
Magnetic structure of single crystalline TmB4 has been studied by magnetization, magnetoresistivity and specific heat measurements. A complex phase diagram with different antiferromagnetic (AF) phases was observed below TN1 = 11.7 K. Besides the plateau at half-saturated magnetization (1/2 MS), also plateaus at 1/9, 1/8 and 1/7 of MS were observed as function of applied magnetic field B//c. From additional neutron scattering experiments on TmB4, we suppose that those plateaus arise from a stripe structure which appears to be coherent domain boundaries between AF ordered blocks of 7 or 9 lattice constants. The received results suggest that the frustration among the Tm3+ magnetic ions, which maps to a geometrically frustrated Shastry-Sutherland lattice lead to strong competition between AF and ferromagnetic (FM) order. Thus, stripe structures in intermediate field appear to be the best way to minimize the magnetostatic energy against other magnetic interactions between the Tm ions combined with very strong Ising anisotropy.
In $TmB_4$, localized electrons with a large magnetic moment interact with metallic electrons in boron-derived bands. We examine the nature of $TmB_4$ using full-relativistic ab-initio density functional theory calculations, approximate tight-binding Hamiltonian results, and the development of an effective Kondo-Ising model for this system. Features of the Fermi surface relating to the anisotropic conduction of charge are discussed. The observed magnetic moment $sim 6 , mu_B$ is argued to require a subtle crystal field effect in metallic systems, involving a flipped sign of the effective charges surrounding a Tm ion. The role of on-site quantum dynamics in the resulting Kondo-Ising type impurity model are highlighted. From this model, elimination of the conduction electrons will lead to spin-spin (RKKY-type) interaction of Ising character required to understand the observed fractional magnetization plateaus in $TmB_4$.
Strongly correlated Kondo insulator SmB6 is known for its peculiar low temperature residual conduction, which has recently been demonstrated to arise from a robust metallic surface state, as predicted by the theory of topological Kondo insulator (TKI). Photoemission, quantum oscillation and magnetic doping experiments have provided evidence for the Dirac-like dispersion and topological protection. Questions arise as whether signatures of spin-momentum locking and electron interaction could be resolved in transport measurements. Here we report metallic conduction of surface state down to mK temperatures with saturation behaviors suggestive of Kondo effect. We observe in the surface state the weak-antilocalization (WAL) effect that is in agreement with a spin-momentum locked metallic surface. At larger perpendicular magnetic fields, the surface state exhibits an unusual linear magnetoresistance similar to those found in Bi-based topological insulators and in graphene. (Correspondence to: [email protected])
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