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Register a new userGiant optical nonlinearity cancellation in quantum wells
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Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their exploitation in frequency conversion. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant cancellation effects in systems with many confined quantum states. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband resonant nonlinearities, we show that these giant cancellations are a result of interfering second-order nonlinear contributions of light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of materials, this work can be employed as a new, extremely sensitive tool to elucidate the bandstructure properties of complex quantum well systems.
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Optical non-linearities usually appear for large intensities, but discrete transitions allow for giant non-linearities operating at the single photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here we demonstrate a two-modes giant non-linearity by using a three-level structure in a single semiconductor quantum dot (QD) embedded in a photonic wire antenna. The large coupling efficiency and the broad operation bandwidth of the photonic wire enable us to have two different laser beams interacting with the QD in order to control the reflectivity of a laser beam with the other one using as few as 10 photons per QD lifetime. We discuss the possibilities offered by this easily integrable system for ultra-low power logical gates and optical quantum gates.
We have calculated the contribution of intersubband transitions to the third order optical nonlinear susceptibility, $chi^{(3)}(omega,omega,omega)$ for nonresonant as well as resonant third harmonic generation and $chi^{(3)}(omega,-omega,omega)$ for nonlinear refraction and absorption. As examples, we consider InAs/AlSb and GaAs/GaAlAs quantum wells. The effects of finite barrier height, energy band nonparabolicity, and high carrier concentrations are included. It is shown that quantum confinement, rather than the band nonparabolicity, is responsible for high values of nonresonant $chi^{(3)}_{zzzz}$. Very high values of $chi^{(3)}_{zzzz}$ are obtained for third harmonic generation and two photon absorption for incident wavelength near 10.6 $mu$m. Intensity dependence of refractive index and of absorption co-efficient is also discussed for intensity well above the saturation intensity. Effective medium theory is used to incorporate the collective effects.
Giant optical nonlinearity is observed under both continuous-wave and pulsed excitation in a deterministically-coupled quantum dot-micropillar system, in a pronounced strong-coupling regime. Using absolute reflectivity measurements we determine the critical intracavity photon number as well as the input and output coupling efficiencies of the device. Thanks to a near-unity input-coupling efficiency, we demonstrate a record nonlinearity threshold of only 8 incident photons per pulse. The output-coupling efficiency is found to strongly influence this nonlinearity threshold. We show how the fundamental limit of single-photon nonlinearity can be attained in realistic devices, which would provide an effective interaction between two coincident single photons.
We present theory and calculations for coherent high-fidelity quantum control of many-particle states in semiconductor quantum wells. We show that coupling a two-electron double quantum dot to a terahertz optical source enables targeted excitations that are one to two orders of magnitude faster and significantly more accurate than those obtained with electric gates. The optical fields subject to physical constraints are obtained through quantum optimal control theory that we apply in conjunction with the numerically exact solution of the time-dependent Schrodinger equation. Our ability to coherently control arbitrary two-electron states, and to maximize the entanglement, opens up further perspectives in solid-state quantum information.
Featured with a plethora of electric and magnetic Mie resonances, high index dielectric nanostructures offer a versatile platform to concentrate light-matter interactions at the nanoscale. By integrating unique features of far-field scattering control and near-field concentration from radiationless anapole states, here, we demonstrate a giant photothermal nonlinearity in single subwavelength-sized silicon nanodisks. The nanoscale energy concentration and consequent near-field enhancements mediated by the anapole mode yield a reversible nonlinear scattering with a large modulation depth and a broad dynamic range, unveiling a record-high nonlinear index change up to 0.5 at mild incident light intensities on the order of MW/cm2. The observed photothermal nonlinearity showcases three orders of magnitude enhancement compared with that of unstructured bulk silicon, as well as nearly one order of magnitude higher than that through the radiative electric dipolar mode. Such nonlinear scattering can empower distinctive point spread functions in confocal reflectance imaging, offering the potential for far-field localization of nanostructured Si with an accuracy approaching 40 nm. Our findings shed new light on active silicon photonics based on optical anapoles.
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