Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userFull-scale Simulation of Electron Transport in Nanoporous Graphene: Probing the Talbot Effect
73
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Designing platforms to control phase-coherence and interference of electron waves is a cornerstone for future quantum electronics, computing or sensing. Nanoporous graphene (NPG) consisting of linked graphene nanoribbons has recently been fabricated using molecular precursors and bottom-up assembly [Moreno et al., Science 360, 199 (2018)] opening an avenue for controlling the electronic current in a two-dimensional material. By simulating electron transport in real-sized NPG samples we predict that electron waves injected from the tip of a scanning tunneling microscope (STM) behave similarly to photons in coupled waveguides, displaying a Talbot interference pattern. We link the origins of this effect to the band structure of the NPG and further demonstrate how this pattern may be mapped out by a second STM probe. We enable atomistic parameter-free calculations beyond the 100 nm scale by developing a new multi-scale method where first-principles density functional theory regions are seamlessly embedded into a large-scale tight-binding.
rate research
Read More
Bottom-up prepared carbon nanostructures appear as promising platforms for future carbon-based nanoelectronics, due to their atomically precise and versatile structure. An important breakthrough is the recent preparation of nanoporous graphene (NPG) as an ordered covalent array of graphene nanoribbons (GNRs). Within NPG, the GNRs may be thought of as 1D electronic nanochannels through which electrons preferentially move, highlighting NPGs potential for carbon nanocircuitry. However, the {pi}-conjugated bonds bridging the GNRs give rise to electronic cross-talk between the individual 1D channels, leading to spatially dispersing electronic currents. Here, we propose a chemical design of the bridges resulting in destructive quantum interference, which blocks the cross-talk between GNRs in NPG, electronically isolating them. Our multiscale calculations reveal that injected currents can remain confined within a single, 0.7 nm wide, GNR channel for distances as long as 100 nm. The concepts developed in this work thus provide an important ingredient for the quantum design of future carbon nanocircuitry.
We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific contact resistivity $rho_c simeq 19 kOmega mu m^2$ and carrier mobility as high as 4000 cm$^2$V$^{-1}$s$^{-1}$. By using a highly doped p-Si/SiO$_2$ substrate as back gate, we analyze the transport properties of the device and the dependence on the pressure and on the electron bombardment. We demonstrate that low energy irradiation is detrimental on the transistor current capability, resulting in an increase of the contact resistance and a reduction of the carrier mobility even at electron doses as low as 30 $e^-/nm^2$. We also show that the irradiated devices recover by returning to their pristine state after few repeated electrical measurements.
The Talbot effect has been known in optics since XIX century and found various technological applications. In this paper, we demonstrate with the help of micromagnetic simulations this self-imaging phenomenon for spin waves propagating in a thin ferromagnetic film magnetized out-of-plane. We show that the main features of the obtained Talbot carpets for spin waves can be described, to a large extent, by the approximate analytical formulas yielded by the general analysis of the wave phenomena. Our results indicate a route to a feasible experimental realisation of the Talbot effect at low and high frequencies and offer interesting effects and possible applications in magnonics.
Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of carbon atoms in the graphene lattice by nitrogen atoms. In this work, we report on electrical and magnetotransport measurements of high-quality graphitic nitrogen-doped graphene. We show that the substitutional nitrogen dopants in graphene introduce atomically sharp scatters for electrons but long-range Coulomb scatters for holes and, thus, graphitic nitrogen-doped graphene exhibits clear electron-hole asymmetry in transport properties. Dominant scattering processes of charge carriers in graphitic nitrogen-doped graphene are analyzed. It is shown that the electron-hole asymmetry originates from a distinct difference in intervalley scattering of electrons and holes. We have also carried out the magnetotransport measurements of graphitic nitrogen-doped graphene at different temperatures and the temperature dependences of intervalley scattering, intravalley scattering and phase coherent scattering rates are extracted and discussed. Our results provide an evidence for the electron-hole asymmetry in the intervalley scattering induced by substitutional nitrogen dopants in graphene and shine a light on versatile and potential applications of graphitic nitrogen-doped graphene in electronic and valleytronic devices.
In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Electrons are accelerated in the channel by a drain-to-source voltage VDS smaller than 3 V, so that programming occurs via electrons tunneling through a potential barrier whose height has been effectively reduced by the accumulated kinetic energy. Particle energy distribution at the semiconductor/oxide interface is studied for different bias conditions and different positions along the channel. The gate current is calculated with a continuum-based post-processing method as a function of the particle distribution obtained from Monte Carlo. Simulation results show that the gate current increases by several orders of magnitude with increasing drain bias and warm electron injection can be an interesting option for programming when short channel effects prohibit the application of larger drain bias.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
