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Register a new userIonic and electronic properties of the topological insulator Bi$_2$Te$_2$Se investigated using $beta$-detected nuclear magnetic relaxation and resonance of $^8$Li
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We report measurements on the high temperature ionic and low temperature electronic properties of the 3D topological insulator Bi$_2$Te$_2$Se using ion-implanted $^8$Li $beta$-detected nuclear magnetic relaxation and resonance. With implantation energies in the range 5-28 keV, the probes penetrate beyond the expected range of the topological surface state, but are still within 250 nm of the surface. At temperatures above ~150 K, spin-lattice relaxation measurements reveal isolated $^8$Li$^{+}$ diffusion with an activation energy $E_{A} = 0.185(8)$ eV and attempt frequency $tau_{0}^{-1} = 8(3) times 10^{11}$ s$^{-1}$ for atomic site-to-site hopping. At lower temperature, we find a linear Korringa-like relaxation mechanism with a field dependent slope and intercept, which is accompanied by an anomalous field dependence to the resonance shift. We suggest that these may be related to a strong contribution from orbital currents or the magnetic freezeout of charge carriers in this heavily compensated semiconductor, but that conventional theories are unable to account for the extent of the field dependence. Conventional NMR of the stable host nuclei may help elucidate their origin.
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We report $beta$-detected nuclear magnetic resonance ($beta$-NMR) measurements in Bi$_{2}$Se$_{3}$:Ca (BSC) and Bi$_{2}$Te$_{3}$:Mn (BTM) single crystals using $^{8}$Li$^{+}$ implanted to depths on the order of 100 nm. Above $sim 200$ K, spin-lattice relaxation (SLR) reveals diffusion of $^{8}$Li$^{+}$, with activation energies of $sim 0.4$ eV ($sim 0.2$ eV) in BSC (BTM). At lower temperatures, the nuclear magnetic resonance (NMR) properties are those of a heavily doped semiconductor in the metallic limit, with Korringa relaxation and a small, negative, temperature-dependent Knight shift in BSC. From this, we make a detailed comparison with the isostructural tetradymite Bi$_{2}$Te$_{2}$Se (BTS) [McFadden et al., Phys Rev. B 99, 125201 (2019)]. In the magnetic BTM, the effects of the dilute Mn moments predominate, but remarkably the $^{8}$Li signal is not wiped out through the magnetic transition at 13 K, with a prominent critical peak in the SLR that is suppressed in a high applied field. This detailed characterization of the $^{8}$Li NMR response is an important step towards using depth-resolved $beta$-NMR to study the low-energy properties of the chiral topological surface state (TSS). With the bulk NMR response now established in several Bi$_{2}$Ch$_{3}$ tetradymite topological insulators (TIs), the prospect of directly probing their chiral TSS using the depth resolution afforded by $beta$-NMR remains strong.
The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators.
We have studied a mosaic of 1T-CrSe$_2$ single crystals using $beta$-detected nuclear magnetic resonance of $^{8}$Li from 4 to 300 K. We identify two broad resonances that show no evidence of quadrupolar splitting, indicating two magnetically distinct environments for the implanted ion. We observe stretched exponential spin lattice relaxation and a corresponding rate ($1/T_1$) that increases monotonically above 200 K, consistent with the onset of ionic diffusion. A pronounced maximum in $1/T_1$ is observed at the low temperature magnetic transition near 20 K. Between these limits, $1/T_1$ instead exhibits a broad minimum with a remarkable absence of strong features in the vicinity of structural and magnetic transitions between 150 and 200 K. Together, the results suggest $^{8}$Li$^{+}$ site occupation within the van der Waals gap between CrSe$_2$ trilayers. Possible origins of the two environments are discussed.
Nuclear magnetic resonance (NMR) was recently shown to measure the bulk band inversion of Bi$_2$Se$_3$ through changes in the $^{209}$Bi nuclear quadrupole interaction, and the corresponding tensor of the local electric field gradient was found to follow, surprisingly, the direction of the external magnetic field if the sample is rotated. This manifests a hidden property of the charge carriers in the bulk of this topological insulator, which is explored here with another material, Bi$_2$Te$_3$. It is found that two electric field gradients appear to be present at $^{209}$Bi, one rests with the lattice, as usual, while a second follows the external field if it is rotated with respect to the crystal axes. These electronic degrees of freedom correspond to an effective rotation of $j$-electrons, and their level life time is believed to be responsible for a new quadrupolar relaxation that should lead to other special properties including the electronic specific heat.
Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here, using angle- and spin-resolved photoemission spectroscopy along with emph{ab initio} calculations we report on a large family of intrinsic magnetic TIs in the homologous series of the van der Waals compounds (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ with $m=0, ..., 6$. Magnetic, electronic and, consequently, topological properties of these materials depend strongly on the $m$ value and are thus highly tunable. The antiferromagnetic (AFM) coupling between the neighboring Mn layers strongly weakens on moving from MnBi2Te4 (m=0) to MnBi4Te7 (m=1), changes to ferromagnetic (FM) one in MnBi6Te10 (m=2) and disappears with further increase in m. In this way, the AFM and FM TI states are respectively realized in the $m=0,1$ and $m=2$ cases, while for $m ge 3$ a novel and hitherto-unknown topologically-nontrivial phase arises, in which below the corresponding critical temperature the magnetizations of the non-interacting 2D ferromagnets, formed by the MBT, building blocks, are disordered along the third direction. The variety of intrinsic magnetic TI phases in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ allows efficient engineering of functional van der Waals heterostructures for topological quantum computation, as well as antiferromagnetic and 2D spintronics.
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