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Perspectives of HgTe Topological Insulators for Quantum Hall Metrology

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 Added by Ivan Yahniuk
 Publication date 2018
  fields Physics
and research's language is English




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We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantization. By experimental and theoretical studies we demonstrate how one may reach very favorable conditions for the QHE resistance standards: low magnetic fields allowing to use permanent magnets ( B $leq$ 1.4T) and simultaneously realtively high teperatures (liquid helium, T $geq$ 1.3K). This way we show that HgTe QW based QHE resistance standards may replace their graphene and GaAs counterparts and pave the way towards large scale fabrication and applications of QHE metrology devices.



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The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility of surface two-dimensional Dirac fermions (DFs) has been attained. This enabled determining all the main TI parameters (the bulk gap and the density of DFs on both of its surfaces) and provided information on the phase of the Shubnikov - de Haas oscillations of DFs, which indicates the rigid topological coupling between the fermion spin and momentum. Prospects for further research are discussed in the conclusion.
In recent years, Majorana physics has attracted considerable attention in both theoretical and experimental studies due to exotic new phenomena and its prospects for fault-tolerant topological quantum computation. To this end, one needs to engineer the interplay between superconductivity and electronic properties in a topological insulator, but experimental work remains scarce and ambiguous. Here we report experimental evidence for topological superconductivity induced in a HgTe quantum well, a two-dimensional topological insulator that exhibits the quantum spin Hall effect. The ac Josephson effect demonstrates that the supercurrent has a $4pi$-periodicity with the superconducting phase difference as indicated by a doubling of the voltage step for multiple Shapiro steps. In addition, an anomalous SQUID-like response to a perpendicular magnetic field shows that this $4pi$-periodic supercurrent originates from states located on the edges of the junction. Both features appear strongest when the sample is gated towards the quantum spin Hall regime, thus providing evidence for induced topological superconductivity in the quantum spin Hall edge states.
The anomalous Floquet Anderson insulator (AFAI) is a two dimensional periodically driven system in which static disorder stabilizes two topologically distinct phases in the thermodynamic limit. The presence of a unit-conducting chiral edge mode and the essential role of disorder induced localization are reminiscent of the integer quantum Hall (IQH) effect. At the same time, chirality in the AFAI is introduced via an orchestrated driving protocol, there is no magnetic field, no energy conservation, and no (Landau level) band structure. In this paper we show that in spite of these differences the AFAI topological phase transition is in the IQH universality class. We do so by mapping the system onto an effective theory describing phase coherent transport in the system at large length scales. Unlike with other disordered systems, the form of this theory is almost fully determined by symmetry and topological consistency criteria, and can even be guessed without calculation. (However, we back this expectation by a first principle derivation.) Its equivalence to the Pruisken theory of the IQH demonstrates the above equivalence. At the same time it makes predictions on the emergent quantization of transport coefficients, and the delocalization of bulk states at quantum criticality which we test against numerical simulations.
The interplay between non-Hermiticity and topology opens an exciting avenue for engineering novel topological matter with unprecedented properties. While previous studies have mainly focused on one-dimensional systems or Chern insulators, here we investigate topological phase transitions to/from quantum spin Hall (QSH) insulators driven by non-Hermiticity. We show that a trivial to QSH insulator phase transition can be induced by solely varying non-Hermitian terms, and there exists exceptional edge arcs in QSH phases. We establish two topological invariants for characterizing the non-Hermitian phase transitions: i) with time-reversal symmetry, the biorthogonal $mathbb{Z}_2$ invariant based on non-Hermitian Wilson loops, and ii) without time-reversal symmetry, a biorthogonal spin Chern number through biorthogonal decompositions of the Bloch bundle of the occupied bands. These topological invariants can be applied to a wide class of non-Hermitian topological phases beyond Chern classes, and provides a powerful tool for exploring novel non-Hermitian topological matter and their device applications.
290 - C. Brune , C.X. Liu , E.G. Novik 2011
We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.
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