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Register a new userNon-volatile ferroelectric memory effect in ultrathin {alpha}-In2Se3
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Recent experiments on layered {alpha}-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders {alpha}-In2Se3 an excellent platform for developing two-dimensional (2D) layered-material based electronics with nonvolatile functionality. In this letter, we demonstrate non-volatile memory effect in a hybrid 2D ferroelectric field effect transistor (FeFET) made of ultrathin {alpha}-In2Se3 and graphene. The resistance of graphene channel in the FeFET is tunable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric {alpha}-In2Se3. The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top-gate ferroelectric. The 2D FeFET can be randomly re-written over more than $10^5$ cycles without losing the non-volatility. Our approach demonstrates a protype of re-writable non-volatile memory with ferroelectricity in van de Waals 2D materials.
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Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarization and an electric field induced metallic state in {alpha}-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of the integration of data storage and logic operations in the same device.
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory.
Nanoscaled room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectrics is a long-standing challenge due to the possible critical thickness effect. Van der Waals materials, thanks to their stable layered structure, saturate interfacial chemistry and weak interlayer couplings, are promising for exploring ultra-thin two-dimensional (2D) ferroelectrics and device applications. Here, we demonstrate a switchable room-temperature ferroelectric diode built upon a 2D ferroelectric {alpha}-In2Se3 layer as thin as 5 nm in the form of graphene/{alpha}-In2Se3 heterojunction. The intrinsic out-of-plane ferroelectricity of the {alpha}-In2Se3 thin layers is evidenced by the observation of reversible spontaneous electric polarization with a relative low coercive electric field of ~$2 X 10^5 V/cm$ and a typical ferroelectric domain size of around tens ${mu}m^2$. Owing to the out-of-plane ferroelectricity of the {alpha}-In2Se3 layer, the Schottky barrier at the graphene/{alpha}-In2Se3 interface can be effectively tuned by switching the electric polarization with an applied voltage, leading to a pronounced switchable double diode effect with an on/off ratio of ~$10^4$. Our results offer a new way for developing novel nanoelectronic devices based on 2D ferroelectrics.
This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$rightarrow$ON state transition that enables this novel CRS application.
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.
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