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Register a new userElectric field induced metallic behavior in thin crystals of ferroelectric {alpha}-In2Se3
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Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarization and an electric field induced metallic state in {alpha}-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of the integration of data storage and logic operations in the same device.
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Recent experiments on layered {alpha}-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders {alpha}-In2Se3 an excellent platform for developing two-dimensional (2D) layered-material based electronics with nonvolatile functionality. In this letter, we demonstrate non-volatile memory effect in a hybrid 2D ferroelectric field effect transistor (FeFET) made of ultrathin {alpha}-In2Se3 and graphene. The resistance of graphene channel in the FeFET is tunable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric {alpha}-In2Se3. The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top-gate ferroelectric. The 2D FeFET can be randomly re-written over more than $10^5$ cycles without losing the non-volatility. Our approach demonstrates a protype of re-writable non-volatile memory with ferroelectricity in van de Waals 2D materials.
Nanoscaled room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectrics is a long-standing challenge due to the possible critical thickness effect. Van der Waals materials, thanks to their stable layered structure, saturate interfacial chemistry and weak interlayer couplings, are promising for exploring ultra-thin two-dimensional (2D) ferroelectrics and device applications. Here, we demonstrate a switchable room-temperature ferroelectric diode built upon a 2D ferroelectric {alpha}-In2Se3 layer as thin as 5 nm in the form of graphene/{alpha}-In2Se3 heterojunction. The intrinsic out-of-plane ferroelectricity of the {alpha}-In2Se3 thin layers is evidenced by the observation of reversible spontaneous electric polarization with a relative low coercive electric field of ~$2 X 10^5 V/cm$ and a typical ferroelectric domain size of around tens ${mu}m^2$. Owing to the out-of-plane ferroelectricity of the {alpha}-In2Se3 layer, the Schottky barrier at the graphene/{alpha}-In2Se3 interface can be effectively tuned by switching the electric polarization with an applied voltage, leading to a pronounced switchable double diode effect with an on/off ratio of ~$10^4$. Our results offer a new way for developing novel nanoelectronic devices based on 2D ferroelectrics.
Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric alpha-In2Se3, we report a new approach to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin alpha-In2Se3 and MoS2, we validate an in-plane voltage gated coplanar field-effect transistor (CP-FET) with distinguished and retentive on/off ratio. Our results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating two-dimensional (2D) ferroelectric into novel nanoelectronic devices with broad applications.
We report phonon renormalization induced by an external electric field E in ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] nanofibers through measuring the E-dependent thermal conductivity. Our experimental results are in excellent agreement with the theoretical ones derived from the lattice dynamics. The renormalization is attributed to the anharmonicity that modifies the phonon spectrum when the atoms are pulled away from their equilibrium positions by the electric field. Our finding provides an efficient way to manipulate the thermal conductivity by tuning external fields in ferroelectric materials.
Electric field induced nucleation is introduced as a possible mechanism to realize a metallic phase of hydrogen. Analytical expressions are derived for the nucleation probabilities of both thermal and quantum nucleation in terms of material parameters, temperature, and the applied field. Our results show that the insulator-metal transition can be driven by an electric field within a reasonable temperature range and at much lower pressures than the current paradigm of P > 400 GPa. Both static and oscillating fields are considered and practical implementations are discussed.
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