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Register a new userAntiferromagnetic-ferromagnetic phase domain development in nanopatterned FeRh islands
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The antiferromagnetic to ferromagnetic phase transition in B2-ordered FeRh is imaged in laterally confined nanopatterned islands using photoemission electron microscopy with x-ray magnetic circular dichroism contrast. The resulting magnetic images directly detail the progression in the shape and size of the FM phase domains during heating and cooling through the transition. In 5 um square islands this domain development during heating is shown to proceed in three distinct modes: nucleation, growth, and merging, each with subsequently greater energy costs. In 0.5 um islands, which are smaller than the typical final domain size, the growth mode is stunted and the transition temperature was found to be reduced by 20 K. The modification to the transition temperature is found by high resolution scanning transmission electron microscopy to be due to a 100 nm chemically disordered edge grain present as a result of ion implantation damage during the patterning. FeRh has unique possibilities for magnetic memory applications; the inevitable changes to its magnetic properties due to subtractive nanofabrication will need to be addressed in future work in order to progress from sheet films to suitable patterned devices.
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Using a double-pump pulse approach and laser-induced THz emission as an ultrafast amperemeter and magnetometer, we show that a femtosecond laser pulse generates ferromagnetic nuclei in a FeRh/Pt bilayer, i.e. these nuclei acquire a net magnetization and a susceptibility to a magnetic field, but only 20 ps after the initial laser excitation. We argue that this latency is intrinsic to the first-order phase transitions from antiferromagnetic to ferromagnetic states and must be present even in the case when the sign of the exchange interaction changes instantaneously.
The antiferromagnetic (AFM) to ferromagnetic (FM) first order phase transition of an epitaxial FeRh thin-film has been studied with x-ray magnetic circular dichroism using photoemission electron microscopy. The FM phase is magnetized in-plane due to shape anisotropy, but the magnetocrystalline anisotropy is negligible and there is no preferred in-plane magnetization direction. When heating through the AFM to FM phase transition the nucleation of the FM phase occurs at many independent nucleation sites with random domain orientation. The domains subsequently align to form the final FM domain structure. We observe no pinning of the FM domain structure.
We use textit{ab-initio} calculations to investigate spin-orbit torques (SOTs) in FeRh(001) deposited on W(100). Since FeRh undergoes a ferromagnetic-antiferromagnetic phase transition close to room temperature, we consider both phases of FeRh. In the antiferromagnetic case we find that the effective magnetic field of the even torque is staggered and therefore ideal to induce magnetization dynamics or to switch the antiferromagnet (AFM). At the antiferromagnetic resonance the inverse SOT induces a current density, which can be determined from the SOT. In the ferromagnetic case our calculations predict both even and odd components of the SOT, which can also be used to describe the ac and dc currents induced at the ferromagnetic resonance. For comparison we compute the SOTs in the c($2times 2$) AFM state of Fe/W(001).
The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 oC. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05 %) is used to illustrate data writing/reading capability.
The B2-ordered alloy FeRh shows a metamagnetic phase transition, transforming from antiferromagnetic (AF) to ferromagnetic (FM) order at a temperature $T_mathrm{t} sim 380 $~K in bulk. As well as temperature, the phase transition can be triggered by many means such as strain, chemical doping, or magnetic or electric fields. Its first-order nature means that phase coexistence is possible. Here we show that a phase boundary in a 300~nm diameter nanopillar, controlled by a doping gradient during film growth, is moved by an electrical current in the direction of electron flow. We attribute this to spin injection from one magnetically ordered phase region into the other driving the phase transition in a region just next to the phase boundary. The associated change in resistance of the nanopillar shows memristive properties, suggesting potential applications as memory cells or artificial synapses in neuromorphic computing schemes.
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