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Register a new userValence Bond Order and Antiferromagnetism in Silicene - ab initio Results
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Silicene and Graphene are similar and have $pi$-$pi^*$ bands. However band width in silicene is only a third of graphene. It results in a substantial increase in the ratio of Hubbard U to band width W, U/W $sim$ 0.5 in graphene to $sim 1$ in silicene. This enhancement, 2 dimensionality and phenomenology suggest a Mott insulator based ground state for silicene (G. Baskaran, arXiv:1309.2242). We lend support to the above proposal by showing, in an ab-initio calculation, that unlike graphene, silicene has two instabilities: i) a valence bond (Kekule) dimerization and ii) a weak two sublattice antiferromagnetic order. Presence of these instabilities, in the absence of fermi surface nesting, point to Mott localization, textit{within the frame work of ab-initio scheme}. Substrate dependent structural reconstructions seen experimentally in silicene are interpreted as generalized Kekule bond order.
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In this work, we report our results on the geometric and electronic properties of hybrid graphite-like structure made up of silicene and boron nitride (BN) layers. We predict from our calculations that this hybrid bulk system, with alternate layers of honeycomb silicene and BN, possesses physical properties similar to those of bulk graphite. We observe that there exists a weak van der Waals interaction between the layers of this hybrid system in contrast to the strong inter-layer covalent bonds present in multi-layers of silicene. Furthermore, our results for the electronic band structure and the density of states show that it is a semi-metal and the dispersion around the Fermi level (E_F) is parabolic in nature and thus the charge carriers in this system behave as textit{Nearly-Free Particle-Like}. These results indicate that the electronic properties of the hybrid bulk system resemble closely those of bulk graphite. Around E_F the electronic band structures have contributions only from silicene layers and the BN layer act only as a buffer layer in this hybrid system since it does not contribute to the electronic properties near E_F. In case of bi-layers of silicene with a single BN layer kept in between, we observe a linear dispersion around E_F similar to that of graphene. However, the characteristic linear dispersion become parabola-like when the system is subjected to a compression along the transverse direction. Our present calculations show that the hybrid system based on silicon and BN can be a possible candidate for two dimensional layered system akin to graphite and multi-layers of graphene.
We present an textit{ab initio} study based on density-functional theory of first- and second-order Raman spectra of graphene-based materials with different stacking arrangements and numbers of layers. Going from monolayer and bilayer graphene to periodic graphitic structures, we investigate the behavior of the first-order G-band and of the second-order 2D-band excited by the same set of photon energies. The former turns out to be very similar in all considered graphene-based materials, while in the latter we find the signatures of individual structures. With a systematic analysis of the second-order Raman spectra at varying frenquency of the incident radiation, we monitor the Raman signal and identify the contributions from different phonon modes that are characteristic of each specific arrangement. Supported by good agreement with experimental findings and with previous theoretical studies based on alternative approaches, our results propose an effective tool to probe and analyze the fingerprints of graphene-based and other low-dimensional materials.
We report ab initio calculations of the electronic band structure, the corresponding optical spectra, and the phonon dispersion relations of trigonal alpha-HgS (cinnabar). The calculated dielectric functions are compared with unpublished optical measurements by Zallen and coworkers. The phonon dispersion relations are used to calculate the temperature and isotopic mass dependence of the specific heat which has been compared with experimental data obtained on samples with the natural isotope abundances of the elements Hg and S (natural minerals and vapor phase grown samples) and on samples prepared from isotope enriched elements by vapor phase transport. Comparison of the calculated vibrational frequencies with Raman and ir data is also presented. Contrary to the case of cubic beta-HgS (metacinnabar), the spin-orbit splitting of the top valence bands at the Gamma-point of the Brillouin zone (Delta_0) is positive, because of a smaller admixture of 5d core electrons of Hg. Calculations of the lattice parameters, and the pressure dependence of Delta_0 and the corresponding direct gap E_0~2eV are also presented. The lowest absorption edge is confirmed to be indirect.
Spin relaxation and decoherence is at the heart of spintronics and spin-based quantum information science. Currently, theoretical approaches that can accurately predict spin relaxation of general solids including necessary scattering pathways and capable for ns to ms simulation time are urgently needed. We present a first-principles real-time density-matrix approach based on Lindblad dynamics to simulate ultrafast spin dynamics for general solid-state systems. Through the complete first-principles descriptions of pump, probe and scattering processes including electron-phonon, electron-impurity and electron-electron scatterings with self-consistent spin-orbit couplings, our method can directly simulate the ultrafast pump-probe measurements for coupled spin and electron dynamics over ns at any temperature and doping levels. We apply this method to a prototypical system GaAs and obtain excellent agreement with experiments. We found that the relative contributions of different scattering mechanisms and phonon modes differ considerably between spin and carrier relaxation processes. In sharp contrast to previous work based on model Hamiltonians, we point out that the electron-electron scattering is negligible at room temperature but becomes very important at low temperatures for spin relaxation in n-type GaAs. Most importantly, we examine the applicable conditions of the commonly-used Dyakonov-Perel relation, which may break down for individual scattering processes. Our work provides a predictive computational platform for spin relaxation in solids, which has unprecedented potentials for designing new materials ideal for spintronics and quantum information technology.
We combine spin polarised density functional theory and thermodynamic mean field theory to describe the phase transitions of antiperovskite manganese nitrides. We find that the inclusion of the localized spin contribution to the entropy, evaluated through mean field theory, lowers the transition temperatures. Furthermore, we show that the electronic entropy leads to first order phase transitions in agreement with experiments whereas the localized spin contribution adds second order character to the transition. We compare our predictions to available experimental data to assess the validity of the assumptions underpinning our multilevel modelling.
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