Do you want to publish a course? Click here

Transport Coefficients of Dirac Ferromagnet: Effects of Vertex Corrections

111   0   0.0 ( 0 )
 Added by Junji Fujimoto
 Publication date 2017
  fields Physics
and research's language is English




Ask ChatGPT about the research

As a strongly spin-orbit coupled metallic model with ferromagnetism, we have considered an extended Stoner model to the relativistic regime, named Dirac ferromagnet in three dimensions. In the previous paper~[Phys. Rev. B 90, 214418 (2014)], we studied the transport properties giving rise to the anisotropic magnetoresistance~(AMR) and the anomalous Hall effect~(AHE) with the impurity potential being taken into account only as the self-energy. The effects of the vertex corrections~(VCs) to AMR and AHE are reported in this paper. AMR is found not to change quantitatively when the VCs is considered, although the transport lifetime is different from the one-electron lifetime and the charge current includes additional contributions from the correlation with spin currents. The side-jump and the skew-scattering contributions to AHE are also calculated. The skew-scattering contribution is dominant in the clean case as can be seen in the spin Hall effect in the non-magnetic Dirac electron system.



rate research

Read More

Bismuth crystal is known for its remarkable properties resulting from particular electronic states, e. g., the Shubnikov-de Haas effect and the de Haas-van Alphen effect. Above all, the large diamagnetism of bismuth had been a long-standing puzzle soon after the establishment of quantum mechanics, which had been resolved eventually in 1970 based on the effective Hamiltonian derived by Wolff as due to the interband effects of a magnetic field in the presence of a large spin-orbit interaction. This Hamiltonian is essentially the same as the Dirac Hamiltonian, but with spatial anisotropy and an effective velocity much smaller than the light velocity. This paper reviews recent progress in the theoretical understanding of transport and optical properties, such as the weak-field Hall effect together with the spin Hall effect, and ac conductivity, of a system described by the Wolff Hamiltonian and its isotropic version with a special interest of exploring possible relationship with orbital magnetism. It is shown that there exist a fundamental relationship between spin Hall conductivity and orbital susceptibility in the insulating state on one hand, and the possibility of fully spin-polarized electric current in magneto-optics. Experimental tests of these interesting features have been proposed.
The theoretical description of modern nanoelectronic devices requires a quantum mechanical treatment and often involves disorder, e.g. form alloys. Therefore, the ab initio theory of transport using non-equilibrium Greens functions is extended to the case of disorder described by the coherent potential approximation. This requires the calculation of non-equilibrium vertex corrections. We implement the vertex corrections in a Korringa-Kohn-Rostoker multiple scattering scheme. In order to verify our implementation and to demonstrate the accuracy and applicability we investigate a system of an iron-cobalt alloy layer embedded in copper. The results obtained with the coherent potential approximation are compared to supercell calculations. It turns out that vertex corrections play an important role for this system.
We report measurements of the cyclotron mass in graphene for carrier concentrations n varying over three orders of magnitude. In contrast to the single-particle picture, the real spectrum of graphene is profoundly nonlinear so that the Fermi velocity describing the spectral slope reaches ~3x10^6 m/s at n <10^10 cm^-2, three times the value commonly used for graphene. The observed changes are attributed to electron-electron interaction that renormalizes the Dirac spectrum because of weak screening. Our experiments also put an upper limit of ~0.1 meV on the possible gap in graphene.
Within a Kubo formalism, we study dc transport and ac optical properties of 3D Dirac and Weyl semimetals. Emphasis is placed on the approach to charge neutrality and on the differences between Dirac and Weyl materials. At charge neutrality, the zero-temperature limit of the dc conductivity is not universal and also depends on the residual scattering model employed. However, the Lorenz number L retains its usual value L_0. With increasing temperature, the Wiedemann-Franz law is violated. At high temperatures, L exhibits a new plateau at a value dependent on the details of the scattering rate. Such details can also appear in the optical conductivity, both in the Drude response and interband background. In the clean limit, the interband background is linear in photon energy and always extrapolates to the origin. This background can be shifted to the right through the introduction of a massless gap. In this case, the extrapolation can cut the axis at a finite photon energy as is observed in some experiments. It is also of interest to differentiate between the two types of Weyl semimetals: those with broken time-reversal symmetry and those with broken spatial-inversion symmetry. We show that, while the former will follow the same behaviour as the 3D Dirac semimetals, for the zero magnetic field properties discussed here, the latter type will show a double step in the optical conductivity at finite doping and a single absorption edge at charge neutrality. The Drude conductivity is always finite in this case, even at charge neutrality.
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to a self consistent Poisson solver is used for the valence band dispersion calculation. A ballistic FET model is used to evaluate the capacitance and current-voltage characteristics. The dispersion shapes and curvatures are strong functions of device size, lattice orientation, and bias, and cannot be described within the effective mass approximation. The anisotropy of the confinement mass in the different quantization directions can cause the charge to preferably accumulate in the (110) and secondly on the (112) rather than (100) surfaces, leading to significant charge distributions for different wire orientations. The total gate capacitance of the nanowire FET devices is, however, very similar for all wires in all the transport orientations investigated ([100], [110], [111]), and is degraded from the oxide capacitance by ~30%. The [111] and secondly the [110] oriented nanowires indicate highest carrier velocities and better ON-current performance compared to [100] wires. The dispersion features and quantization behavior, although a complicated function of physical and electrostatic confinement, can be explained at first order by looking at the anisotropic shape of the heavy-hole valence band.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا