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Register a new userImprovement of the 3$omega$ thermal conductivity measurement technique at nanoscale
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Added by
Giovanni Pennelli Prof.
Publication date
2017
fields
Physics
and research's language is
English
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The reduction of the thermal conductivity in nanostructures opens up the possibility of exploiting for thermoelectric purposes also materials such as silicon, which are cheap, available and sustainable but with a high thermal conductivity in their bulk form. The development of thermoelectric devices based on these innovative materials requires reliable techniques for the measurement of thermal conductivity on a nanometric scale. The approximations introduced by conventional techniques for thermal conductivity measurements can lead to unreliable results when applied to nanostructures, because heaters and temperature sensors needed for the measurement cannot have a negligible size, and therefore perturb the result. In this paper we focus on the 3$omega$ technique, applied to the thermal conductivity measurement of suspended silicon nanomembranes. To overcome the approximations introduced by conventional analytical models used for the interpretation of the 3$omega$ data, we propose to use a numerical solution, performed by means of finite element modeling, of the thermal and electrical transport equations. An excellent fit of the experimental data will be presented, discussed, and compared with an analytical model.
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We study by scanning thermal microscopy the nanoscale thermal conductance of films (40 to 400 nm thick) of [1]benzothieno[3,2-b][1]benzothiophene (BTBT) and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8). We demonstrate that the out-of-plane thermal conductivity is significant along the interlayer direction, larger for BTBT (0.63 +/- 0.12 W m-1 K-1) compared to C8-BTBT-C8 (0.25 +/- 0.13 W m-1 K-1). These results are supported by molecular dynamics calculations (Approach to Equilibrium Molecular Dynamics method) performed on the corresponding molecular crystals. The calculations point to significant thermal conductivity (3D-like) values along the 3 crystalline directions, with anisotropy factors between the crystalline directions below 1.8 for BTBT and below 2.8 for C8-BTBT-C8, in deep contrast with the charge transport properties featuring a two-dimensional character for these materials. In agreement with the experiments, the calculations yield larger values in BTBT compared to C8-BTBT-C8 (0.6-1.3 W m-1 K-1 versus 0.3-0.7 W m-1 K-1, respectively). The weak thickness dependence of the nanoscale thermal resistance is in agreement with a simple analytical model.
Establishment of a new technique or extension of an existing technique for thermal and thermoelectric measurements to a more challenging system is an important task to explore the thermal and thermoelectric properties of various materials and systems. The bottleneck lies in the challenges in measuring the thermal contact resistance. In this work, we applied electron beam self-heating technique to derive the intrinsic thermal conductivity of suspended Molybdenum Disulfide (MoS2) ribbons and the thermal contact resistance, with which the interfacial thermal resistance between few-layer MoS2 and Pt electrodes was calculated. The measured room temperature thermal conductivity of MoS2 is around 30 W/mK, while the estimated interfacial thermal resistance is around 2*10-6 m2K/W. Our experiments extend a useful branch in application of this technique for studying thermal properties of suspended layered ribbons and have potential application in investigating the interfacial thermal resistance of different 2D heterojunctions.
We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures directly through metallic leads, avoiding conventional substrate intermediation. We show, by using the average noise thermometry and local noise sensing technique in InAs nanowire based devices, that a nanoscale metallic constriction on a SiO2 substrate acts like a diffusive conductor with negligible electron-phonon relaxation and non-ideal leads. The non-universal impact of the leads on the achieved thermal bias -- which depends on their dimensions, shape and material composition -- is hard to minimize, but is possible to accurately calibrate in a properly designed nano-device. Our results allow to reduce the issue of the thermal bias calibration to the knowledge of the heater resistance and pave the way for accurate thermoelectric or similar measurements at the nanoscale.
Knowledge of the mean free path distribution of heat-carrying phonons is key to understanding phonon-mediated thermal transport. We demonstrate that thermal conductivity measurements of thin membranes spanning a wide thickness range can be used to characterize how bulk thermal conductivity is distributed over phonon mean free paths. A non-contact transient thermal grating technique was used to measure the thermal conductivity of suspended Si membranes ranging from 15 to 1500 nm in thickness. A decrease in the thermal conductivity from 74% to 13% of the bulk value is observed over this thickness range, which is attributed to diffuse phonon boundary scattering. Due to the well-defined relation between the membrane thickness and phonon mean free path suppression, combined with the range and accuracy of the measurements, we can reconstruct the bulk thermal conductivity accumulation vs. phonon mean free path, and compare with theoretical models.
We study the size dependence of thermal conductivity in nanoscale semiconducting systems. An analytical formula including the surface scattering and the size confinement effects of phonon transport is derived. The theoretical formula gives good agreements with the existing experimental data for Si and GaAs nanowires and thin films.
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