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Register a new userBroadband frequency comb generation in aluminum nitride-on-sapphire microresonators
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Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum into the challenging UV region, a material platform with high UV transparency is crucial. In this paper, crystalline aluminum nitride (AlN)-onsapphire film is demonstrated for efficient Kerr frequency comb generation. Near-infrared (NIR) comb with nearly octave-spanning coverage and low parametric threshold is achieved in continuous-wave pumped high-quality-factor AlN microring resonators. The competition between stimulated Raman scattering (SRS) and hyperparametric oscillation is investigated, along with broadband comb generation via Raman-assisted four-wave mixing (FWM). Thanks to its wide bandgap, excellent crystalline quality as well as intrinsic quadratic and cubic susceptibilities, AlN-on-sapphire platform should be appealing for integrated nonlinear optics from MIR to UV region.
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Aluminum nitride is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high quality factor aluminum nitride micro-ring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, frequency combs are generated with a single wavelength continuous-wave pump laser. The Kerr coefficient (n2) of aluminum nitride is further extracted from our experimental results.
We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low threshold and high slope efficiency is demonstrated. Selective excitation of A$_1^mathrm{TO}$ and E$_2^mathrm{high}$ phonons with Raman shifts of $sim$612 and 660 cm$^{-1}$ is observed by adjusting the polarization of the pump light. A theoretical analysis of Raman scattering efficiency within ${c}$-plane (0001) of AlN is carried out to help account for the observed lasing behavior. Bidirectional lasing is experimentally confirmed as a result of symmetric Raman gain in micro-scale waveguides. Furthermore, second-order Raman lasing with unparalleled output power of $sim$11.3 mW is obtained, which offers the capability to yield higher order Raman lasers for mid-infrared applications.
Optical frequency combs consist of equally spaced discrete optical frequency components and are essential tools for optical communications and for precision metrology, timing and spectroscopy. To date, wide-spanning combs are most often generated by mode-locked lasers or dispersion-engineered resonators with third-order Kerr nonlinearity. An alternative comb generation method uses electro-optic (EO) phase modulation in a resonator with strong second-order nonlinearity, resulting in combs with excellent stability and controllability. Previous EO combs, however, have been limited to narrow widths by a weak EO interaction strength and a lack of dispersion engineering in free-space systems. In this work, we overcome these limitations by realizing an integrated EO comb generator in a thin-film lithium niobate photonic platform that features a large electro-optic response, ultra-low optical loss and highly co-localized microwave and optical felds, while enabling dispersion engineering. Our measured EO frequency comb spans more than the entire telecommunications L-band (over 900 comb lines spaced at ~ 10 GHz), and we show that future dispersion engineering can enable octave-spanning combs. Furthermore, we demonstrate the high tolerance of our comb generator to modulation frequency detuning, with frequency spacing finely controllable over seven orders of magnitude (10 Hz to 100 MHz), and utilize this feature to generate dual frequency combs in a single resonator. Our results show that integrated EO comb generators, capable of generating wide and stable comb spectra, are a powerful complement to integrated Kerr combs, enabling applications ranging from spectroscopy to optical communications.
Aluminum nitride has been shown to possess both strong Kerr nonlinearity and electro-optic Pockels effect. By combining these two effects, here we demonstrate on-chip reversible on/off switching of the optical frequency comb generated by an aluminum nitride microring resonator. We optimize the design of gating electrodes and the underneath resonator structure to effectively apply electric field without increasing the optical loss. The switching of the comb is monitored by measuring one of the frequency comb peaks while varying the electric field. The controlled comb electro-optic response is investigated for direct comparison with the transient thermal effect.
High quality factor optical microcavities have been employed in a variety of material systems to enhance nonlinear optical interactions. While single-crystalline aluminum nitride microresonators have recently emerged as a low loss platform for integrated nonlinear optics such as four wave mixing and Raman lasing, few studies have investigated this material for second-harmonic generation. In this Letter, we demonstrate an optimized fabrication of dually-resonant phase-matched ring resonators from epitaxial aluminum nitride thin films. An unprecendented second-harmonic generation efficiency of 17,000%/W is obtained in the low power regime and pump depletion is observed at a relatively low input power of 3.5 mW. This poses epitaxial aluminum nitride as the highest efficiency second-harmonic generator among current integrated platforms.
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