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Enhancement of interfacial thermal conductance of SiC by overlapped carbon nanotubes and intertube atoms

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 Added by Xiaoxiang Yu
 Publication date 2016
  fields Physics
and research's language is English




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We proposed a new way, adding intertube atoms, to enhance interfacial thermal conductance (ITC) between SiC-carbon nanotube (CNT) array structure. Non-equilibrium molecular dynamics method was used to study the ITC. The results show that the intertube atoms can significantly enhance the ITC. The dependence of ITC on both the temperature and the number of intertube atoms are shown. The mechanism is analyzed by calculating probability distributions of atomic forces and vibrational density of states. Our study may provide some guidance on enhancing the ITC of CNT-based composites.



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Exploring the mechanism of interfacial thermal transport and reducing the interfacial thermal resistance is of great importance for thermal management and modulation. Herein, the interfacial thermal resistance between overlapped graphene nanoribbons is largely reduced by adding bonded carbon chains by performing molecular dynamics simulations. And the analytical model (cross-interface model, CIM) is utilized to analyze and explain the two-dimensional thermal transport mechanism at cross-interface. An order of magnitude reduction in interfacial thermal resistance is found as the graphene nanoribbons are bonded by just one carbon chain. Interestingly, the decreasing rate of interfacial thermal resistance slows down gradually with the increasing of the number of carbon chains, which can be explained by the proposed theoretical relationship based on CIM. Moreover, by the comparison of CIM and traditional simplified model, the accuracy of CIM is verified and demonstrated in overlapped graphene nanoribbons. This work provides a new way to improve the interfacial thermal transport and reveal the essential mechanism for low-dimensional materials applied in thermal management.
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