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Register a new userUltralow-threshold thin-film lithium niobate optical parametric oscillator
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Materials with strong $chi^{(2)}$ optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss $chi^{(2)}$ materials remains challenging and limits the threshold power of on-chip $chi^{(2)}$ OPO. Here we report the first on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase matched, high-quality microring resonator, whose threshold power ($sim$30 $mu$W) is 400 times lower than that in previous $chi^{(2)}$ integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained at a pump power of 93 $mu$W. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chip OPOs demonstrated so far, as well as advantages including high conversion efficiency, flexibility in quasi-phase matching and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides an potential platform for realizing photonic neural networks.
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Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in our cell phones. This half-century-old material is currently embracing a revolution in thin-film LN integrated photonics. The success of manufacturing wafer-scale, high-quality, thin films of LN on insulator (LNOI), accompanied with breakthroughs in nanofabrication techniques, have made high-performance integrated nanophotonic components possible. With rapid development in the past few years, some of these thin-film LN devices, such as optical modulators and nonlinear wavelength converters, have already outperformed their legacy counterparts realized in bulk LN crystals. Furthermore, the nanophotonic integration enabled ultra-low-loss resonators in LN, which unlocked many novel applications such as optical frequency combs and quantum transducers. In this Review, we cover -- from basic principles to the state of the art -- the diverse aspects of integrated thin-film LN photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto-optics. We also identify challenges that this platform is currently facing and point out future opportunities. The field of integrated LNOI photonics is advancing rapidly and poised to make critical impacts on a broad range of applications in communication, signal processing, and quantum information.
Lithium niobate on insulator (LNOI) is an emerging photonic platform with great promises for future optical communications, nonlinear optics and microwave photonics. An important integrated photonic building block, active waveguide amplifiers, however, is still missing in the LNOI platform. Here we report an efficient and compact waveguide amplifier based on erbium-doped LNOI waveguides, realized by a sequence of erbium-doped crystal growth, ion slicing and lithography-based waveguide fabrication. Using a compact 5-mm-long waveguide, we demonstrate on-chip net gain of > 5 dB for 1530-nm signal light with a relatively low pump power of 21 mW at 980 nm. The efficient LNOI waveguide amplifiers could become an important fundamental element in future lithium niobate photonic integrated circuits.
Erbium-doped lithium niobate on insulator (LNOI) laser plays an important role in the complete photonic integrated circuits (PICs). Here, we demonstrate an integrated tunable whisper galley single mode laser (WGSML) by making use of a pair of coupled microdisk and microring on LNOI. A 974 nm single-mode pump light can have an excellent resonance in the designed microdisk, which is beneficial to the whisper gallery mode (WGM) laser generation. The WGSML at 1560.40 nm with a maximum 31.4 dB side mode suppression ratio (SMSR) has been achieved. By regulating the temperature, WGSMLs output power increased and the central wavelength can be changed from 1560.30 nm to 1560.40 nm. Whats more, 1560.60 nm and 1565.00 nm WGSMLs have been achieved by changing the coupling gap width between microdisk and microring. We can also use the electro-optic effect of LNOI to obtain more accurate adjustable WGSMLs in further research.
As an active material with favorable linear and nonlinear optical properties, thin-film lithium niobate has demonstrated its potential in integrated photonics. Integration with rare-earth ions, which are promising candidates for quantum memories and transducers, will enrich the system with new applications in quantum information processing. Here, we investigate the optical properties at 1.5 micron wavelengths of rare-earth ions (Er$^{3+}$) implanted in thin-film lithium niobate waveguides and micro-ring resonators. Optical quality factors near a million after post annealing show that ion implantation damage can be successfully repaired. The transition linewidth and fluorescence lifetime of erbium ions are characterized, revealing values comparable to bulk-doped crystals. The ion-cavity coupling is observed through a Purcell enhanced fluorescence, from which a Purcell factor of ~3.8 is extracted. This platform is compatible with top-down lithography processes and leads to a scalable path for controlling spin-photon interfaces in photonic circuits.
Superconducting cavity electro-optics (EO) presents a promising route to coherently convert microwave and optical photons and distribute quantum entanglement between superconducting circuits over long-distance through an optical network. High EO conversion efficiency demands transduction materials with strong Pockels effect and excellent optical transparency. Thin-film Lithium Niobate (TFLN) offers these desired characteristics however so far has only delivered unidirectional conversion with efficiencies on the order of $10^{-5}$, largely impacted by its prominent photorefractive (PR) effect at cryogenic temperatures. Here we show that, by mitigating the PR effect and associated charge-screening effect, the devices conversion efficiency can be enhanced by orders of magnitude while maintaining stable cryogenic operation, thus allowing a demonstration of conversion bidirectionality and accurate quantification of on-chip efficiency. With the optimized monolithic integrated superconducting EO device based on TFLN-on-sapphire substrate, an on-chip conversion efficiency of 1.02% (internal efficiency, 15.2%) is realized. Our demonstration indicates that with further device improvement, it is feasible for TFLN to approach unitary internal conversion efficiency.
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