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Register a new userCompositional and temperature evolution of crystal structure of new thermoelectric compound LaOBiS2-xSex
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Added by
Yoshikazu Mizuguchi
Publication date
2016
fields
Physics
and research's language is
English
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We examined the crystal structure of the new thermoelectric material LaOBiS2-xSex, whose thermoelectric performance is enhanced by Se substitution, by using powder synchrotron X-ray diffraction and Rietveld refinement. The emergence of metallic conductivity and enhancement of the thermoelectric power factor of LaOBiS2-xSex can be explained with the higher in-plane chemical pressure caused by the increase of Se concentration at the in-plane Ch1 site (Ch = S, Se). High-temperature X-ray diffraction measurements for optimally substituted LaOBiSSe revealed anomalously large atomic displacement parameters (Uiso) for Bi and Ch atoms in the BiCh2 conduction layers. The anisotropic analysis of the atomic displacement parameters (U11 and U33) for the in-plane Bi and Ch1 sites suggested that Bi atoms exhibit large atomic displacement along the c-axis direction above 300 K, which could be the origin of the low thermal conductivity in LaOBiSSe. The large Bi vibration along the c-axis direction could be related to in-plane rattling, which is a new strategy for attaining low thermal conductivity and phonon-glass-electron-crystal states.
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We examined the electrical transport properties of densified LaOBiS2-xSex, which constitutes a new family of thermoelectric materials. The power factor increased with increasing concentration of Se, i.e., Se substitution led to an enhanced electrical conductivity, without suppression of the Seebeck coefficient. Hall measurements indicated that the low electrical resistivity resulted from increases in the carrier mobility, and the decrease in carrier concentration led to large absolute values of the Seebeck coefficient of the system.
We have synthesized a new layered oxychalcogenide La2O2Bi3AgS6. From synchrotron X-ray diffraction and Rietveld refinement, the crystal structure of La2O2Bi3AgS6 was refined using a model of the P4/nmm space group with a = 4.0644(1) {AA} and c = 19.412(1) {AA}, which is similar to the related compound LaOBiPbS3, while the interlayer bonds (M2-S1 bonds) are apparently shorter in La2O2Bi3AgS6. The tunneling electron microscopy (TEM) image confirmed the lattice constant derived from Rietveld refinement (c ~ 20 {AA}). The electrical resistivity and Seebeck coefficient suggested that the electronic states of La2O2Bi3AgS6 are more metallic than those of LaOBiS2 and LaOBiPbS3. The insertion of a rock-salt-type chalcogenide into the van der Waals gap of BiS2-based layered compounds, such as LaOBiS2, will be a useful strategy for designing new layered functional materials in the layered chalcogenide family.
We have investigated the crystal structure of LaOBiPbS3 using neutron diffraction and synchrotron X-ray diffraction. From structural refinements, we found that the two metal sites, occupied by Bi and Pb, were differently surrounded by the sulfur atoms. Calculated bond valence sum suggested that one metal site was nearly trivalent and the other was nearly divalent. Neutron diffraction also revealed site selectivity of Bi and Pb in the LaOBiPbS3 structure. These results suggested that the crystal structure of LaOBiPbS3 can be regarded as alternate stacks of the rock-salt-type Pb-rich sulfide layers and the LaOBiS2-type Bi-rich layers. From band calculations for an ideal (LaOBiS2)(PbS) system, we found that the S bands of the PbS layer were hybridized with the Bi bands of the BiS plane at around the Fermi energy, which resulted in the electronic characteristics different from that of LaOBiS2. Stacking the rock-salt type sulfide (chalcogenide) layers and the BiS2-based layered structure could be a new strategy to exploration of new BiS2-based layered compounds, exotic two-dimensional electronic states, or novel functionality.
We analyze the anisotropic electrical and thermal transport measurements in single crystals of In2Te5 belonging to monoclinic space group C12 c1 with the temperature gradient applied parallel and perpendicular to the crystallographic c-axis of the crystals. The thermal conductivity along the c-axis thermal conductivity parallel was found to smaller by a factor of 2 compared to the thermal conductivity along the direction perpendicular to the c-axis over the entire temperature range. In contrast, the Seebeck coefficient along the c-axis parallel was found to be higher than its value along the direction perpendicular to the c-axis. At room temperature, the figure of merit ZT parallel is found to be 4 times larger as compared to the figure of merit ZT perpendicular.
We have investigated the temperature evolution of the magnetic structures of HoFeO$_3$ by single crystal neutron diffraction. The three different magnetic structures found as a function of temperature for hfo are described by the magnetic groups Pb$$n$2_1$, Pbn$2_1$ and Pbn$2_1$ and are stable in the temperature ranges $approx$ 600-55~K, 55-37~K and 35$>T>2$~K respectively. In all three the fundamental coupling between the Fe sub-lattices remains the same and only their orientation and the degree of canting away from the ideal axial direction varies. The magnetic polarisation of the Ho sub-lattices in these two higher temperature regions, in which the major components of the Fe moment lie along $x$ and $y$, is very small. The canting of the moments from the axial directions is attributed to the antisymmetric interactions allowed by the crystal symmetry. They include contributions from single ion anisotropy as well as the Dzyaloshinski antisymmetric exchange. In the low temperature phase two further structural transitions are apparent in which the spontaneous magnetisation changes sign with respect to the underlying antiferromagnetic configuration. In this temperature range the antisymmetric exchange energy varies rapidly as the the Ho sub-lattices begin to order. So long as the ordered Ho moments are small the antisymmetric exchange is due only to Fe-Fe interactions, but as the degree of Ho order increases the Fe-Ho interactions take over whilst at the lowest temperatures, when the Ho moments approach saturation the Ho-Ho interactions dominate. The reversals of the spontaneous magnetisation found in this study suggest that in hfo the sums of the Fe-Fe and Ho-Ho antisymmetric interactions have the same sign as one another, but that of the Ho-Fe terms is opposite.
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