We analyze the anisotropic electrical and thermal transport measurements in single crystals of In2Te5 belonging to monoclinic space group C12 c1 with the temperature gradient applied parallel and perpendicular to the crystallographic c-axis of the crystals. The thermal conductivity along the c-axis thermal conductivity parallel was found to smaller by a factor of 2 compared to the thermal conductivity along the direction perpendicular to the c-axis over the entire temperature range. In contrast, the Seebeck coefficient along the c-axis parallel was found to be higher than its value along the direction perpendicular to the c-axis. At room temperature, the figure of merit ZT parallel is found to be 4 times larger as compared to the figure of merit ZT perpendicular.
We study role of site substitutions at In and Te site in In2Te5 on the thermoelectric behavior. Single crystals with compositions In2(Te1-xSex)5 (x = 0, 0.05, 0.10) and Fe0.05In1.95(Te0.90Se0.10)5 were prepared using modified Bridgman-Stockbarger technique. Electrical and thermal transport properties of these single crystals were measured in the temperature range 6 - 395 K. A substantial decrease in thermal conductivity is observed in Fe substituted samples attributed to the enhanced phonon point-defect scattering. Marked enhancement in Seebeck coefficient S along with a concomitant suppression of electrical resistivity r{ho} is observed in Se substituted single crystals. An overall enhancement of thermoelectric figure of merit (zT) by a factor of 310 is observed in single crystals of Fe0.05In1.95(Te0.90Se0.10)5 compared to the parent In2Te5 single crystals.
The layered Bi-chalcogenide compounds have been drawing much attention as a new layered superconductor family since 2012. Due to the rich variation of crystal structure and constituent elements, the development of new physics and chemistry of the layered Bi-chalcogenide family and its applications as functional materials have been expected. Recently, it was revealed that the layered Bi chalcogenides can show a relatively high thermoelectric performance (ZT = 0.36 in LaOBiSSe at ~650 K). Here, we show the crystal structure variation of the Bi-chalcogenide family and their thermoelectric properties. Finally, the possible strategies for enhancing the thermoelectric performance are discussed on the basis of the experimental and the theoretical facts reviewed here.
Bismuth oxyselenide (Bi$_2$O$_2$Se) attracts great interest as a potential n-type complement to p-type thermoelectric oxides in practical applications. Previous investigations were generally focused on polycrystals. Here, we performed a study on the thermoelectric properties of Bi$_2$O$_2$Se single crystals. Our samples exhibit electron mobility as high as 250 cm$^2.$V$^{-1}$.s$^{-1}$ and thermal conductivity as low as $2$ W.m$^{-1}$.K$^{-1}$ near room temperature. The maximized figure of merit is yielded to be 0.188 at 390 K, higher than that of polycrystals. Consequently, a rough estimation of the phonon mean free path ($ell_textrm{ph}$) from the kinetic model amounts to 12 $r{A}$ at 390 K and follows a $T^{-1}$ behavior. An extrapolation of $ell_textrm{ph}$ to higher temperatures indicates that this system approaches the Ioffe-Regel limit at about 1100 K. In light of the phonon dispersions, we argue that the ultralow $ell_textrm{ph}$ is attributed to intense anharmonic phonon-phonon scattering, including Umklapp process and acoustic to optical phonon scattering. Our results suggest that single crystals provide a further improvement of thermoelectric performance of Bi$_2$O$_2$Se.
We examined the crystal structure of the new thermoelectric material LaOBiS2-xSex, whose thermoelectric performance is enhanced by Se substitution, by using powder synchrotron X-ray diffraction and Rietveld refinement. The emergence of metallic conductivity and enhancement of the thermoelectric power factor of LaOBiS2-xSex can be explained with the higher in-plane chemical pressure caused by the increase of Se concentration at the in-plane Ch1 site (Ch = S, Se). High-temperature X-ray diffraction measurements for optimally substituted LaOBiSSe revealed anomalously large atomic displacement parameters (Uiso) for Bi and Ch atoms in the BiCh2 conduction layers. The anisotropic analysis of the atomic displacement parameters (U11 and U33) for the in-plane Bi and Ch1 sites suggested that Bi atoms exhibit large atomic displacement along the c-axis direction above 300 K, which could be the origin of the low thermal conductivity in LaOBiSSe. The large Bi vibration along the c-axis direction could be related to in-plane rattling, which is a new strategy for attaining low thermal conductivity and phonon-glass-electron-crystal states.
The thermoelectric properties of n type nanoscale three dimensional (3D) Si phononic crystals (PnCs) with spherical pores are studied. Density functional theory and Boltzmann transport equation under the relaxation time approximation are applied to study the electronic transport coefficients, electrical conductivity, Seebeck coefficient and electronic thermal conductivity. We found that the electronic transport coefficients in 3D Si PnC at room temperature (300 K) change very little compared with that of Si, for example, electrical conductivity and electronic thermal conductivity is decreased by 0.26 to 0.41 and 0.39 to 0.55 depending on carrier concentration, respectively, and the Seebeck coefficient is similar to that of bulk Si. However, the lattice thermal conductivity of 3D Si PnCs with spherical pores is decreased by a factor of 500 calculated by molecular dynamics methods, leading to the ZT of 0.76, which is about 30 times of that of porous Si. This work indicates that 3D Si PnC is a promising candidate for high efficiency thermoelectric materials.
Anup V. Sanchela
,Ajay D. Thakur
,C. V. Tomy
.
(2015)
.
"Direction dependent thermoelectric properties of layered compound In2Te5 single crystal"
.
Anup Sanchela
هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا