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Register a new userDoes a pristine, unreconstructed SrTiO$_3$(001) surface exist?
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The surfaces of perovskite oxides affect their functional properties, and while a bulk-truncated (1$times$1) termination is generally assumed, its existence and stability is controversial. Here, such a surface is created by cleaving the prototypical SrTiO$_3$(001) in ultra-high vacuum, and its response to thermal annealing is observed. Atomically resolved nc-AFM shows that intrinsic point defects on the as-cleaved surface migrate at temperatures above 200,$^circ$C. At 400--500,$^circ$C, a disordered surface layer forms, albeit still with a (1$times$1) pattern in LEED. Purely TiO$_2$-terminated surfaces, prepared by wet-chemical treatment, are also disordered despite their (1$times$1) periodicity in LEED.
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The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions. A high sheet carrier concentration of 2x10$^{16}$ cm$^{-2}$ and mobility of 30,000 cm$^2$/V s is reported for the metallic interfaces, which is similar to the quasi-two dimensional gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface with similar growth conditions. High-resolution synchrotron X-ray-based structural determination of the atomic-scale structures of both metallic and insulating LCO/STO interfaces show chemical intermixing and an interfacial lattice expansion. Angle resolved photoemission spectroscopy of 2 and 4 uc metallic LCO/STO shows no intensity near the Fermi level indicating that the conducting region is occurring deep enough in the substrate to be inaccessible to photoemission spectroscopy. Post-growth annealing in flowing oxygen causes a reduction in the sheet carrier concentration and mobility for the metallic interface while annealing the insulating interface at high temperatures and low oxygen partial pressures results in metallicity. These results highlight the critical role of defects related to oxygen vacancies on the creation of mobile charge carriers at the LCO/STO heterointerface.
We study the underlying chemical, electronic and magnetic properties of a number of magnetite based thin films. The main focus is placed onto NiO/Fe$_3$O$_4$(001) bilayers grown on MgO(001) and Nb-SrTiO$_3$(001) substrates. We compare the results with those obtained on pure Fe$_3$O$_4$(001) thin films. It is found that the magnetite layers are oxidized and Fe$^{3+}$ dominates at the surfaces due to maghemite ($gamma$-Fe$_2$O$_3$) formation, which decreases with increasing magnetite layer thickness. From a layer thickness of around 20 nm on the cationic distribution is close to that of stoichiometric Fe$_3$O$_4$. At the interface between NiO and Fe$_3$O$_4$ we find the Ni to be in a divalent valence state, with unambiguous spectral features in the Ni 2p core level x-ray photoelectron spectra typical for NiO. The formation of a significant NiFe$_2$O$_4$ interlayer can be excluded by means of XMCD. Magneto optical Kerr effect measurements reveal significant higher coercive fields compared to magnetite thin films grown on MgO(001), and a 45$^{circ}$ rotated magnetic easy axis. We discuss the spin magnetic moments of the magnetite layers and find that the moment increases with increasing thin film thickness. At low thickness the NiO/Fe$_3$O$_4$ films grown on Nb-SrTiO$_3$ exhibits a significantly decreased spin magnetic moments. A thickness of 20 nm or above leads to spin magnetic moments close to that of bulk magnetite.
Surface photovoltage (SPV) spectroscopy, which is a versatile method to analyze the energetic distribution of electronic defect states at surfaces and interfaces of wide-bandgap semiconductor (hetero-)structures, is applied to comparatively investigate heterostructures made of 5-unit-cell-thick LaAlO$_3$ films grown either on TiO$_2$- or on SrO-terminated SrTiO$_3$. As shown in a number of experimental and theoretical investigations in the past, these two interfaces exhibit dramatically different properties with the first being conducting and the second insulating. Our present SPV investigation reveals clearly distinguishable interface defect state distributions for both configurations when interpreted within the framework of a classical semiconductor band scheme. Furthermore, bare SrTiO$_3$ crystals with TiO$_2$ or mixed SrO/TiO$_2$ terminations show similar SPV spectra and transients as do LaAlO$_3$-covered samples with the respective termination of the SrTiO$_3$ substrate. This is in accordance with a number of recent works that stress the decisive role of SrTiO$_3$ and the minor role of LaAlO$_3$ with respect to the electronic interface properties.
We have performed angle resolved photoemission spectroscopy (ARPES) experiments on the surface states of SrTiO$_3$(001) using linearly and circularly polarized light to investigate the subband structures of out-of-plane $d_{xz/yz}$ orbitals and chiral orbital angular momentum (OAM). The data taken in the first Brillouin zone reveal new subbands for $d_{xz/yz}$ orbitals with Fermi wave vectors of 0.25 and 0.45 $mathrm{AA}^{-1}$ in addition to the previously reported ones. As a result, there are at least two subbands for all the Ti 3d t$_{2g}$ orbitals. Our circular dichroism ARPES data is suggestive of a chiral OAM structure in the surface states and may provide clues to the origin of the linear Rashba-like surface band splitting.
The origin of the $3 times 1$ reconstruction observed in epitaxial LaCoO$_{3}$ films on SrTiO$_3(001)$ is assessed by using first-principles calculations including a Coulomb repulsion term. We compile a phase diagram as a function of the oxygen pressure, which shows that ($3 times 1$)-ordered oxygen vacancies (LaCoO$_{2.67}$) are favored under commonly used growth conditions, while stoichiometric films emerge under oxygen-rich conditions. Growth of further reduced LaCoO$_{2.5}$ brownmillerite films is impeded by phase separation. We report two competing ground-state candidates for stoichiometric films: a semimetallic phase with $3 times 1$ low-spin/intermediate-spin/intermediate-spin magnetic order and a semiconducting phase with intermediate-spin magnetic order. This demonstrates that tensile strain induces ferromagnetism even in the absence of oxygen vacancies. Both phases exhibit an intriguing ($3 times 1$)-reconstructed octahedral rotation pattern and accordingly modulated La-La distances. In particular, charge and bond disproportionation and concomitant orbital order of the $t_{2g}$ hole emerge at the Co sites that are also observed for unstrained bulk LaCoO$_3$ in the intermediate-spin state and explain structural data obtained by x-ray diffraction at elevated temperature. Site disproportionation drives a metal-to-semiconductor transition that reconciles the intermediate-spin state with the experimentally observed low conductivity during spin-state crossover without Jahn-Teller distortions.
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