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Register a new userAspects of electron-phonon interactions with strong forward scattering in FeSe Thin Films on SrTiO$_3$ substrates
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Mono- and multilayer FeSe thin films grown on SrTiO$_mathrm{3}$ and BiTiO$_mathrm{3}$ substrates exhibit a greatly enhanced superconductivity over that found in bulk FeSe. A number of proposals have been advanced for the mechanism of this enhancement. One possibility is the introduction of a cross-interface electron-phonon ($e$-$ph$) interaction between the FeSe electrons and oxygen phonons in the substrates that is peaked in the forward scattering (small ${bf q}$) direction due to the two-dimensional nature of the interface system. Motivated by this, we explore the consequences of such an interaction on the superconducting state and electronic structure of a two-dimensional system using Migdal-Eliashberg theory. This interaction produces not only deviations from the expectations of conventional phonon-mediated pairing but also replica structures in the spectral function and density of states, as probed by angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and quasi-particle interference imaging. We also discuss the applicability of Migdal-Eliashberg theory for a situation where the ep interaction is peaked at small momentum transfer and in the FeSe/STO system.
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We study the effect of combining spin fluctuations and forward scattering electron-phonon ({eph}) coupling on the superconductivity in the FeSe/SrTiO$_3$ system modeled by a phenomenological two-band Hubbard model with long-range {eph} interactions. We treat the electron and phonon degrees of freedom on an equal footing using a emph{fully} self-consistent FLEX plus Migdal-Eliashberg calculation, which includes a self-consistent determination of the spin fluctuation spectrum. Based on FeSe monolayers, we focus on the case where one of the bands lies below the Fermi level (i.e. incipient), and demonstrate that the combined interactions can enhance or suppress $T_c$, depending on their relative strength. For a suitable choice of parameters, the spin-fluctuation mechanism yields a $T_c approx 46.8$ K incipient $s_pm$ superconductor, consistent with surface-doped FeSe thin films. A forward-focused {eph} interaction further enhances the $T_c$, as observed in monolayer FeSe on SrTiO$_3$.
The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000 cm$^2$V$^{-1}$s$^{-1}$ at low carrier density of 3 x 10$^{17}$ cm$^{-3}$ were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhancement in the superconducting transition temperature were observed across the second Lifshitz transition (LT) where the third band becomes occupied, revealing dominant intra-band scattering. These films further revealed an anomalous behavior in the Hall carrier density as a consequence of the antiferrodistortive (AFD) transition and the temperature-dependence of the Hall scattering factor. Using hybrid MBE growth, phenomenological modeling, temperature-dependent transport measurements, and scanning superconducting quantum interference device imaging, we provide critical insights into the important role of inter- vs intra-band scattering and of AFD domain walls on normal-state and superconducting properties of SrTiO$_3$.
In-situ epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films is demonstrated on a non-oxide substrate CaF$_2$. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSe$_{0.5}$Te$_{0.5}$, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at $T$ = 4.5 K reaches 5.9 x 10$^4$ Acm$^{-2}$ at $mu_0H$ = 10 T, and 4.2 x 10$^4$ Acm$^{-2}$ at $mu_0H$ = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.
We have investigated the crystal structures and superconducting properties of thin films of FeSe$_{0.5}$Te$_{0.5}$ grown on eight different substrates. Superconductivity is not correlated with the lattice mismatch; rather it is correlated with the degree of in-plane orientation and with the lattice parameter ratio $c/a$. The best superconducting properties were observed in films on MgO and LaAlO$_3$ ($T_mathrm{c}^mathrm{zero}$ of 9.5 K). TEM observation showed that the presence or absence of an amorphous-like layer at the substrate surface plays a key role in determining the structural and superconducting properties of the grown films.
The high temperature superconductivity in single-unit-cell (1UC) FeSe on SrTiO3 (STO)(001) and the observation of replica bands by angle-resolved photoemission spectroscopy (ARPES) have led to the conjecture that the coupling between FeSe electron and the STO phonon is responsible for the enhancement of Tc over other FeSe-based superconductors1,2. However the recent observation of a similar superconducting gap in FeSe grown on the (110) surface of STO raises the question of whether a similar mechanism applies3,4. Here we report the ARPES study of the electronic structure of FeSe grown on STO(110). Similar to the results in FeSe/STO(001), clear replica bands are observed. We also present a comparative study of STO (001) and STO(110) bare surfaces, where photo doping generates metallic surface states. Similar replica bands separating from the main band by approximately the same energy are observed, indicating this coupling is a generic feature of the STO surfaces and interfaces. Our findings suggest that the large superconducting gaps observed in FeSe films grown on two different STO surface terminations are likely enhanced by a common coupling between FeSe electrons and STO phonons.
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