No Arabic abstract
We report a reinvestigation of superconducting Sn$_{1-x}$In$_{x}$Te at both low and high In doping levels. Analysis of the superconductivity reveals a fundamental change as a function of textit{x}: the system evolves from a weakly coupled to a strongly coupled superconductor with increasing indium content. Hall Effect measurements further show that the carrier density does not vary linearly with Indium content; indeed at high Indium content, the samples are overall textit{n}-type, which is contrary to expectations of the standard picture of In$^{1+}$ replacing Sn$^{2+}$ in this material. Density functional theory calculations probing the electronic state of In in SnTe show that it does not act as a trivial hole dopant, but instead forms a distinct, partly filled In 5textit{s} - Te 5textit{p} hybridized state centered around E$_F$, very different from what is seen for other nominal hole dopants such as Na, Ag, and vacant Sn sites. We conclude that superconducting In-doped SnTe therefore cannot be considered as a simple hole doped semiconductor.
An extended study on PdS is carried out with the measurements of the resistivity, Hall coefficient, Raman scattering, and X-ray diffraction at high pressures up to 42.3 GPa. With increasing pressure, superconductivity is observed accompanying with a structural phase transition at around 19.5 GPa. The coexistence of semiconducting and metallic phases observed at normal state is examined by the Raman scattering and X-ray diffraction between 19.5 and 29.5 GPa. After that, only the metallic normal state maintains with an almost constant superconducting transition temperature. The similar evolution between the superconducting transition temperature and carrier concentration with pressure supports the phonon-mediated superconductivity in this material. These results highlight the important role of pressure played in inducing superconductivity from these narrow band-gap semiconductors.
Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and thus to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak antilocalization and the weak links of the SQUID fully-gapped proximity induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2$pi$ periodicity, possibly dominated by the bulk conductivity.
We performed high-field magnetotransport and magnetization measurements on a single crystal of the 122-phase iron pnictide Ba(Fe1-xCox)2As2. Unlike the HTS cuprates and 1111-phase oxypnictides, Ba(Fe1-xCox)2As2 showed practically no broadening of the resistive transitions under magnetic fields up to 45 T. The mass anisotropy gamma = Hc2ab/Hc2c deduced from the slopes of the upper critical field dHc2ab/dT = 4.9T/K and dHc2c/dT = 2.5T/K decreases from ~2 near Tc, to ~1.5 at lower temperatures. We observed the irreversibility field close to Hc2, and a rather unusual symmetric volume pinning force curve Fp(H) suggestive of strong pinning nano-structure.
In the search for MgB2-like phonon-mediated superconductors we have carried out a systematic density functional theory study of the Ca-B system, isoelectronic to Mg-B, at ambient and gigapascal pressures. A remarkable variety of candidate high-pressure ground states have been identified with an evolutionary crystal structure search, including a stable alkaline-earth monoboride oI8-CaB, a superconductor with an expected critical temperature (Tc) of 5.5 K. We have extended our previous study of CaB6 [Phys. Rev. Lett. 108, 102501 (2012)] to nearby stoichiometries of CaB[6+x], finding that extra boron further stabilizes the proposed B24 units. Here an explanation is given for the transformation of cP7-CaB6 into the more complex oS56 and tI56 polymorphs at high pressure. The stability of the known metallic tP20 phase of CaB4 at ambient pressure is explained from a crystal structure and chemical bonding point of view. The tP20 structure is shown to destabilize at 19 GPa relative to a semiconducting MgB4-like structure due to chemical pressure from the metal ion. The hypothetical AlB2-type structure of CaB2, previously shown to have favorable superconducting features, is demonstrated here to be unstable at all pressures; two new metallic CaB2 polymorphs with unusual boron networks stabilize at elevated pressures above 8 GPa but are found to have very low critical temperatures (Tc ~1 K). The stability of all structures has been rationalized through comparison with alkaline-earth analogs, emphasizing the importance of the size of the metal ion for the stability of borides. Our study illustrates the inverse correlation between the thermodynamic stability and superconducting properties and the necessity to carefully examine both in the design of new synthesizable superconducting materials.
The electronic structure of low-density n-type SrTiO3 delta-doped heterostructures is investigated by angular dependent Shubnikov-de Haas oscillations. In addition to a controllable crossover from a three- to two-dimensional Fermi surface, clear beating patterns for decreasing dopant layer thicknesses are found. These indicate the lifting of the degeneracy of the conduction band due to subband quantization in the two-dimensional limit. Analysis of the temperature-dependent oscillations shows that similar effective masses are found for all components, associated with the splitting of the light electron pocket. The dimensionality crossover in the superconducting state is found to be distinct from the normal state, resulting in a rich phase diagram as a function of dopant layer thickness.