No Arabic abstract
We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (mKID) arrays. Using a 6 inch sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2 inch wafer was reduced to <25 %. Measurements of a 132-pixel mKID array from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminium mKIDs. We measured a noise equivalent power of NEP = 3.6e-15 W/Hz^(1/2). Finally, we describe possible routes to further improve the performance of these TiN mKID arrays.
We demonstrate photon-noise limited performance at sub-millimeter wavelengths in feedhorn-coupled, microwave kinetic inductance detectors (MKIDs) made of a TiN/Ti/TiN trilayer superconducting film, tuned to have a transition temperature of 1.4~K. Micro-machining of the silicon-on-insulator wafer backside creates a quarter-wavelength backshort optimized for efficient coupling at 250~micron. Using frequency read out and when viewing a variable temperature blackbody source, we measure device noise consistent with photon noise when the incident optical power is $>$~0.5~pW, corresponding to noise equivalent powers $>$~3$times 10^{-17}$ W/$sqrt{mathrm{Hz}}$. This sensitivity makes these devices suitable for broadband photometric applications at these wavelengths.
We describe optimization of a cryogenic magnetometer that uses nonlinear kinetic inductance in superconducting nanowires as the sensitive element instead of a superconducting quantum interference device (SQUID). The circuit design consists of a loop geometry with two nanowires in parallel, serving as the inductive section of a lumped LC resonator similar to a kinetic inductance detector (KID). This device takes advantage of the multiplexing capability of the KID, allowing for a natural frequency multiplexed readout. The Kinetic Inductance Magnetometer (KIM) is biased with a DC magnetic flux through the inductive loop. A perturbing signal will cause a flux change through the loop, and thus a change in the induced current, which alters the kinetic inductance of the nanowires, causing the resonant frequency of the KIM to shift. This technology has applications in astrophysics, material science, and the medical field for readout of Metallic Magnetic Calorimeters (MMCs), axion detection, and magnetoencephalography (MEG).
We present a cryogenic wafer mapper based on light emitting diodes (LEDs) for spatial mapping of a large microwave kinetic inductance detector (MKID) array. In this scheme, an array of LEDs, addressed by DC wires and collimated through horns onto the detectors, is mounted in front of the detector wafer. By illuminating each LED individually and sweeping the frequency response of all the resonators, we can unambiguously correspond a detector pixel to its measured resonance frequency. We have demonstrated mapping a 76.2 mm 90-pixel MKID array using a mapper containing 126 LEDs with 16 DC bias wires. With the frequency to pixel-position correspondence data obtained by the LED mapper, we have found a radially position-dependent frequency non-uniformity < 1.6% over the 76.2 mm wafer. Our LED wafer mapper has no moving parts and is easy to implement. It may find broad applications in superconducting detector and quantum computing/information experiments.
We have fabricated an array of subgap kinetic inductance detectors (SKIDs) made of granular aluminum ($T_csim$2~K) sensitive in the 80-90 GHz frequency band and operating at 300~mK. We measure a noise equivalent power of $1.3times10^{-16}$~W/Hz$^{0.5}$ on average and $2.6times10^{-17}$~W/Hz$^{0.5}$ at best, for an illuminating power of 50~fW per pixel. Even though the circuit design of SKIDs is identical to that of the kinetic inductance detectors (KIDs), the SKIDs operating principle is based on their sensitivity to subgap excitations. This detection scheme is advantageous because it avoids having to lower the operating temperature proportionally to the lowest detectable frequency. The SKIDs presented here are intrinsically selecting the 80-90 GHz frequency band, well below the superconducting spectral gap of the film, at approximately 180 GHz.
To use highly resistive material for Kinetic Inductance Detectors (KID), new designs have to be done, in part due to the impedance match needed between the KID chip and the whole 50 ohms readout circuit. Chips from two new hybrid designs, with an aluminum throughline coupled to titanium nitride microresonators, have been measured and compared to a TiN only chip. In the hybrid chips, parasitic temperature dependent box resonances are absent. The dark KID properties have been measured in a large set of resonators. A surprisingly long lifetime, up to 5.6 ms is observed in a few KIDs. For the other more reproducible devices, the mean electrical Noise Equivalent Power is 5.4 10-19 W.Hz1/2.