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Register a new userSubstantial optical dielectric enhancement by volume compression in LiAsSe$_2$
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Based on first-principles calculations, we predict a substantial increase in the optical dielectric function of LiAsSe$_2$ under pressure. We find that the optical dielectric constant is enhanced threefold under volume compression. This enhancement is mainly due to the dimerization strength reduction of the one-dimensional (1D) As--Se chains in LiAsSe$_2$, which significantly alters the wavefunction phase mismatch between two neighboring chains and changes the transition intensity. By developing a tight-binding model of the interacting 1D chains, the essential features of the low-energy electronic structure of LiAsSe$_2$ are captured. Our findings are important for understanding the fundamental physics of LiAsSe$_2$ and provide a feasible way to enhance the material optical response that can be applied to light harvesting for energy applications.
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We present a theoretical analysis of the effect of dielectric confinement on the Coulomb interaction in dielectrically modulated quantum structures. We discuss the implications of the strong enhancement of the electron-hole and electron-electron coupling for two specific examples: (i) GaAs-based quantum wires with remote oxide barriers, where combined quantum and dielectric confinements are predicted to lead to room temperature exciton binding, and (ii) semiconductor quantum dots in colloidal environments, where the many-body ground states and the addition spectra are predicted to be drastically altered by the dielectric environment.
Cyclotron resonance (CR) measurements for the Fe-based superconductor KFe$_2$As$_2$ are performed. One signal for CR is observed, and is attributed to the two-dimensional $alpha$ Fermi surface at the $Gamma$ point. We found a large discrepancy in the effective masses of CR [(3.4$pm$0.05)$m_e$ ($m_e$ is the free electron mass)] and de-Haas van Alphen (dHvA) results, a direct evidence of mass enhancement due to electronic correlation. A comparison of the CR and dHvA results shows that both intra- and interband electronic correlations contribute to the mass enhancement in KFe$_2$As$_2$.
Palladium diselenide (PdSe$_2$), a new type of two-dimensional noble metal dihalides (NMDCs), has received widespread attention for its excellent electrical and optoelectronic properties. Herein, high-quality continuous centimeter-scale PdSe$_2$ films with layers in the range of 3L-15L were grown using Chemical Vapor Deposition (CVD) method. The absorption spectra and DFT calculations revealed that the bandgap of the PdSe$_2$ films decreased with increasing number of layers, which is due to PdSe$_2$ enhancement of orbital hybridization. Spectroscopic ellipsometry (SE) analysis shows that PdSe2 has significant layer-dependent optical and dielectric properties. This is mainly due to the unique strong exciton effect of the thin PdSe$_2$ film in the UV band. In particular, the effect of temperature on the optical properties of PdSe$_2$ films was also observed, and the thermo-optical coefficients of PdSe$_2$ films with different number of layers were calculated. This study provides fundamental guidance for the fabrication and optimization of PdSe$_2$-based optoelectronic devices.
The integration of two-dimensional transition metal dichalcogenide crystals (TMDCs) into a dielectric environment is critical for optoelectronic and photonic device applications. Here, we investigate the effects of direct deposition of different dielectric materials (Al$_2$O$_3$, SiO$_2$, SiN$_x$) onto atomically thin (monolayer) TMDC WS$_2$ on its optical response. Atomic layer deposition (ALD), electron beam evaporation (EBE), plasma enhanced chemical vapour deposition (PECVD), and magnetron sputtering methods of material deposition are investigated. The photoluminescence (PL) measurements reveal quenching of the excitonic emission after all deposition processes. The reduction in neutral exciton PL is linked to the increased level of charge doping and associated rise of the trion emission, and/or the localized (bound) exciton emission. Furthermore, Raman spectroscopy allows us to clearly correlate the observed changes of excitonic emission with the increased levels of lattice disorder and defects. Overall, the EBE process results in the lowest level of doping and defect densities and preserves the spectral weight of the exciton emission in the PL, as well as the exciton oscillator strength. Encapsulation with ALD appears to cause chemical changes, which makes it distinct from all other techniques. Sputtering is revealed as the most aggressive deposition method for WS$_2$, fully quenching its optical response. Our results demonstrate and quantify the effects of direct deposition of dielectric materials onto monolayer WS$_2$, which can provide a valuable guidance for the efforts to integrate monolayer TMDCs into functional optoelectronic devices.
A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic ellipsometry, as well as first principle calculations. Dielectric function spectra measured on high quality, marginally electrically conductive melt grown single bulk crystals are obtained on a wavelength-by-wavelength (a.k.a. point-by-point) basis and by numerical reduction of a subtle free charge carrier Drude model contribution. A four-parameter semi-quantum model is applied to determine all sixteen pairs of infrared-active transverse and longitudinal optical phonon modes, including the high-frequency dielectric constant, $varepsilon_{infty}=4.05pm 0.05$. The Lyddane-Sachs-Teller relation then gives access to the static dielectric constant, $varepsilon_{mathrm{DC}}=10.55pm 0.07$. All experimental results are in excellent agreement with our density functional theory calculations and with previously reported values, where existent. We also perform optical Hall effect measurements and determine for the unintentionally doped $n$-type sample a free electron density of $n=(2.81 pm 0.01)times 10^{17}$~cm$^{-3}$, mobility of $mu=(112 pm 3)$~cm$^{2}$/(Vs), and an effective mass parameter of $(0.208pm0.006)m_e$. Density and mobility parameters compare very well with results of electrical Hall effect measurements. Our effective mass parameter, which is measured independently of any other experimental technique, represents the bottom curvature of the $Gamma$ point in In$_2$O$_3$ in agreement with previous extrapolations. We use terahertz spectroscopic ellipsometry to measure the quasi-static response of In$_2$O$_3$, and our model validates the static dielectric constant obtained from the Lyddane-Sachs-Teller relation.
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