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Register a new userUltrafast Carrier Dynamics in the Large Magnetoresistance Material WTe$_{2}$
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Ultrafast optical pump-probe spectroscopy is used to track carrier dynamics in the large magnetoresistance material WTe$_{2}$. Our experiments reveal a fast relaxation process occurring on a sub-picosecond time scale that is caused by electron-phonon thermalization, allowing us to extract the electron-phonon coupling constant. An additional slower relaxation process, occurring on a time scale of $sim$5-15 picoseconds, is attributed to phonon-assisted electron-hole recombination. As the temperature decreases from 300 K, the timescale governing this process increases due to the reduction of the phonon population. However, below $sim$50 K, an unusual decrease of the recombination time sets in, most likely due to a change in the electronic structure that has been linked to the large magnetoresistance observed in this material.
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We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase of the hole density below $sim$160~K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50~K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50~K, which might be the direct driving force of the electron-hole ``compensation and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.
In order to understand the material dependence of $T_c$ within the single-layered cuprates, we study a two-orbital model that considers both $d_{x^2-y^2}$ and $d_{z^2}$ orbitals. We reveal that a hybridization of $d_{z^2}$ on the Fermi surface substantially affects $T_c$ in the cuprates, where the energy difference $Delta E$ between the $d_{x^2-y2}$ and $d_{z^2}$ orbitals is identified to be the key parameter that governs both the hybridization and the shape of the Fermi surface. A smaller $Delta E$ tends to suppress $T_c$ through a larger hybridization, whose effect supersedes the effect of diamond-shaped (better-nested) Fermi surface. The mechanism of the suppression of d-wave superconductivity due to $d_{z^2}$ orbital mixture is clarified from the viewpoint of the ingredients involved in the Eliashberg equation, i.e., the Greens functions and the form of the pairing interaction described in the orbital representation. The conclusion remains qualitatively the same if we take a three-orbital model that incorporates Cu 4s orbital explicitly, where the 4s orbital is shown to have an important effect of making the Fermi surface rounded. We have then identified the origin of the material and lattice-structure dependence of $Delta E$, which is shown to be determined by the energy difference $Delta E_d$ between the two Cu3d orbitals (primarily governed by the apical oxygen height), and the energy difference $Delta E_p$ between the in-plane and apical oxygens (primarily governed by the interlayer separation $d$).
Single atom manipulation within doped correlated electron systems would be highly beneficial to disentangle the influence of dopants, structural defects and crystallographic characteristics on their local electronic states. Unfortunately, their high diffusion barrier prevents conventional manipulation techniques. Here, we demonstrate the possibility to reversibly manipulate select sites in the optimally doped high temperature superconductor Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ using the local electric field of the tip. We show that upon shifting individual Bi atoms at the surface, the spectral gap associated with superconductivity is seen to reversibly change by as much as 15 meV (~5% of the total gap size). Our toy model that captures all observed characteristics suggests the field induces lateral movement of point-like objects that create a local pairing potential in the CuO2 plane.
We report high-resolution neutron scattering measurements of the low energy spin fluctuations of KFe$_{2}$As$_{2}$, the end member of the hole-doped Ba$_{1-x}$K$_x$Fe$_2$As$_2$ family with only hole pockets, above and below its superconducting transition temperature $T_c$ ($sim$ 3.5 K). Our data reveals clear spin fluctuations at the incommensurate wave vector ($0.5pmdelta$, 0, $L$), ($delta$ = 0.2)(1-Fe unit cell), which exhibit $L$-modulation peaking at $L=0.5$. Upon cooling to the superconducting state, the incommensurate spin fluctuations gradually open a spin-gap and form a sharp spin resonance mode. The incommensurability ($2delta$ = 0.4) of the resonance mode ($sim1.2$ meV) is considerably larger than the previously reported value ($2delta$ $approx0.32$) at higher energies ($gesim6$ meV). The determination of the momentum structure of spin fluctuation in the low energy limit allows a direct comparison with the realistic Fermi surface and superconducting gap structure. Our results point to an $s$-wave pairing with a reversed sign between the hole pockets near the zone center in KFe$_{2}$As$_{2}$.
Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion.
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