We demonstrate an atomic force microscopy based method for estimation of defect density by identification of threading dislocations on a non-flat surface resulting from metamorphic growth. The discussed technique can be applied as an everyday evaluation tool for the quality of epitaxial structures and allow for cost reduction, as it lessens the amount of the transmission electron microscopy analysis required at the early stages of projects. Metamorphic structures with low surface defectivities (below 106) were developed successfully with the application of the technique, proving its usefulness in process optimisation.
We present a selection of stack designs for MOVPE grown InxGa1-xAs metamorphic buffer layers following various convex-down compositional continuous gradients of the In content, showing that defect generation and strain can be managed in a variety of ways, some rather unexpected (and unreported). Indeed, we observe that it is possible to grow surprisingly thick tensile strained layers on metamorphic substrates, without significant relaxation and defect generation. We believe our findings give significant insights to the investigation of strain, relaxation and defect distribution in metamorphic buffer design, so to obtain properly engineered/tailored structures (the most successful ones already finding applications in device growth).
Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a FZ-grown silicon. A classification of the large-scale impurity accumulations in CZ Si is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si is also proposed. In addition, the images of the large-scale impurity accumulations obtained by means of the scanning mid-IR-laser microscopy are demonstrated.
The microstructures of MgB2 wires prepared by the powder-in-tube technique and subsequent hot isostatic pressing were investigated using transmission electron microscopy. Large amount of crystalline defects including small angle twisting, tilting, and bending boundaries, in which high densities of dislocations reside, were found forming sub-grains within MgB2 grains. It is believed that these defects resulted from particle deformation during the hot isostatic pressing process and are effective flux pinning centers that contribute to the high critical current densities of the wires at high temperatures and at high fields.
We have studied the magnetization reversal process in FM/AFM bilayer structures through of spin dynamics simulation. It has been observed that the magnetization behavior is different at each branch of the hysteresis loop as well as the exchange-bias behavior. On the descending branch a sudden change of the magnetization is observed while on the ascending branch is observed a bland change of the magnetization. The occurrence of the asymmetry in the hysteresis loop and the variation in the exchange-bias is due to anisotropy which is introduced only in the coupling between ferromagnetic (FM) and antiferromagnetic (AFM) layers.
In this Letter, we present the first non-contact atomic force microscopy (nc-AFM) of a silicene on silver (Ag) surface, obtained by combining non-contact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). STM images over large areas of silicene grown on Ag(111) surface show both (sqrt13xsqrt13)R13.9{deg} and (4x4) superstructures. For the widely observed (4x4) structure, the nc-AFM topography shows an atomic-scale contrast inversion as the tip-surface distance is decreased. At the shortest tip-surface distance, the nc-AFM topography is very similar to the STM one. The observed structure in the nc-AFM topography is compatible with only one out of two silicon atoms being visible. This indicates unambiguously a strong buckling of the silicene honeycomb layer.
Agnieszka Gocalinska
,Marina Manganaro
,Valeria Dimastrodonato
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(2015)
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"Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE"
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Agnieszka Gocalinska Dr
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