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Register a new userContribution of the electron-phonon interaction to Lindhard energy partition at low energy in Ge and Si detectors for astroparticle physics applications
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The influence of the transient thermal effects on the partition of the energy of selfrecoils in germanium and silicon into energy eventually given to electrons and to atomic recoils respectively is studied. The transient effects are treated in the frame of the thermal spike model, which considers the electronic and atomic subsystems coupled through the electron - phonon interaction. For low energies of selfrecoils, we show that the corrections to the energy partition curves due to the energy exchange during the transient processes modify the Lindhard predictions. These effects depend on the initial temperature of the target material, as the energies exchanged between electronic and lattice subsystems have different signs for temperatures lower and higher than about 15 K. Many of the experimental data reported in the literature support the model.
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General expressions for the electron- and hole-acoustical-phonon deformation potential Hamiltonian (H_{E-DP}) are derived for the case of Ge/Si and Si/Ge core/shell nanowire structures (NWs) with circular cross section. Based on the short-range elastic continuum approach and on derived analytical results, the spatial confined effects on the vector phonon displacement, the phonon dispersion relation and the electron- and hole-phonon scattering amplitudes are analyzed. It is shown that the acoustical vector displacement, phonon frequencies and H_{E-DP} present mixed torsional, axial, and radial components depending on the angular momentum quantum number and phonon wavector under consideration. The treatment shows that bulk group velocities of the constituent materials are renormalized due to the spatial confinement and intrinsic strain at the interface. The role of insulating shell on the phonon dispersion and electron-phonon coupling in Ge/Si and Si/Ge NWs are discussed.
Directional detection is a promising Dark Matter search strategy. Even though it could accommodate to a sizeable background contamination, electron/recoil discrimination remains a key and challenging issue as for direction-insensitive detectors. The measurement of the 3D track may be used to discriminate electrons from nuclear recoils. While a high rejection power is expected above 20 keV ionization, a dedicated data analysis is needed at low energy. After identifying discriminant observables, a multivariate analysis, namely a Boosted Decision Tree, is proposed, enabling an efficient event tagging for Dark Matter search. We show that it allows us to optimize rejection while keeping a rather high efficiency which is compulsory for rare event search.With respect to a sequential analysis, the rejection is about 20 times higher with a multivariate analysis, for the same Dark Matter exclusion limit.
This work evaluates the viability of polyimide and parylene-C for passivation of lithium-drifted silicon (Si(Li)) detectors. The passivated Si(Li) detectors will form the particle tracker and X-ray detector of the General Antiparticle Spectrometer (GAPS) experiment, a balloon-borne experiment optimized to detect cosmic antideuterons produced in dark matter annihilations or decays. Successful passivation coatings were achieved by thermally curing polyimides, and the optimized coatings form an excellent barrier against humidity and organic contamination. The passivated Si(Li) detectors deliver $lesssim,4$ keV energy resolution (FWHM) for 20$-$100 keV X-rays while operating at temperatures of $-$35 to $-45,^{circ}$C. This is the first reported successful passivation of Si(Li)-based X-ray detectors operated above cryogenic temperatures.
Electron tracking based Compton imaging is a key technique to improve the sensitivity of Compton cameras by measuring the initial direction of recoiled electrons. To realize this technique in semiconductor Compton cameras, we propose a new detector concept, Si-CMOS hybrid detector. It is a Si detector bump-bonded to a CMOS readout integrated circuit to obtain electron trajectory images. To acquire the energy and the event timing, signals from N-side are also read out in this concept. By using an ASIC for the N-side readout, the timing resolution of few us is achieved. In this paper, we present the results of two prototypes with 20 um pitch pixels. The images of the recoiled electron trajectories are obtained with them successfully. The energy resolutions (FWHM) are 4.1 keV (CMOS) and 1.4 keV (N-side) at 59.5 keV. In addition, we confirmed that the initial direction of the electron is determined using the reconstruction algorithm based on the graph theory approach. These results show that Si-CMOS hybrid detectors can be used for electron tracking based Compton imaging.
A Si(Li) detector fabrication procedure has been developed with the aim of satisfying the unique requirements of the GAPS (General Antiparticle Spectrometer) experiment. Si(Li) detectors are particularly well-suited to the GAPS detection scheme, in which several planes of detectors act as the target to slow and capture an incoming antiparticle into an exotic atom, as well as the spectrometer and tracker to measure the resulting decay X-rays and annihilation products. These detectors must provide the absorption depth, energy resolution, tracking efficiency, and active area necessary for this technique, all within the significant temperature, power, and cost constraints of an Antarctic long-duration balloon flight. We report here on the fabrication and performance of prototype 2-diameter, 1-1.25 mm-thick, single-strip Si(Li) detectors that provide the necessary X-ray energy resolution of $sim$4 keV for a cost per unit area that is far below that of previously-acquired commercial detectors. This fabrication procedure is currently being optimized for the 4-diameter, 2.5 mm-thick, multi-strip geometry that will be used for the GAPS flight detectors.
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