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Register a new userDevelopment of Si-CMOS hybrid detectors towards electron tracking based Compton imaging in semiconductor detectors
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Electron tracking based Compton imaging is a key technique to improve the sensitivity of Compton cameras by measuring the initial direction of recoiled electrons. To realize this technique in semiconductor Compton cameras, we propose a new detector concept, Si-CMOS hybrid detector. It is a Si detector bump-bonded to a CMOS readout integrated circuit to obtain electron trajectory images. To acquire the energy and the event timing, signals from N-side are also read out in this concept. By using an ASIC for the N-side readout, the timing resolution of few us is achieved. In this paper, we present the results of two prototypes with 20 um pitch pixels. The images of the recoiled electron trajectories are obtained with them successfully. The energy resolutions (FWHM) are 4.1 keV (CMOS) and 1.4 keV (N-side) at 59.5 keV. In addition, we confirmed that the initial direction of the electron is determined using the reconstruction algorithm based on the graph theory approach. These results show that Si-CMOS hybrid detectors can be used for electron tracking based Compton imaging.
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To explore the sub-MeV/MeV gamma-ray window for astronomy, we have developed the Electron-Tracking Compton Camera (ETCC), and carried out the first performance test at room condition using several gamma-ray sources in the sub-MeV energy band. Using a simple track analysis for a quick first test of the performance, the gamma-ray imaging capability was demonstrated by clear images and 5.3 degrees of angular resolution measure (ARM) measured at 662 keV. As the greatest impact of this work, a gamma-ray detection efficiency on the order of $10^{-4}$ was achieved at the sub-MeV gamma-ray band, which is one order of magnitude higher than our previous experiment. This angular resolution and detection efficiency enables us to detect the Crab Nebula at the 5 sigma level with several hours observation at balloon altitude in middle latitude. Furthermore, good consistency of efficiencies between this performance test and simulation including only physical processes has a large importance; it means we achieve nearly 100% detection of Compton recoil electrons. Thus, our estimation of enhancements by upgrades of the detector is more dependable. We are planning to confirm the imaging capability of the ETCC by observation of celestial objects in the SMILE-II (Sub-MeV gamma ray Imaging Loaded-on-balloon Experiment II). The SMILE-II and following SMILE-III project will be an important key of sub-MeV/MeV gamma-ray astronomy.
This work evaluates the viability of polyimide and parylene-C for passivation of lithium-drifted silicon (Si(Li)) detectors. The passivated Si(Li) detectors will form the particle tracker and X-ray detector of the General Antiparticle Spectrometer (GAPS) experiment, a balloon-borne experiment optimized to detect cosmic antideuterons produced in dark matter annihilations or decays. Successful passivation coatings were achieved by thermally curing polyimides, and the optimized coatings form an excellent barrier against humidity and organic contamination. The passivated Si(Li) detectors deliver $lesssim,4$ keV energy resolution (FWHM) for 20$-$100 keV X-rays while operating at temperatures of $-$35 to $-45,^{circ}$C. This is the first reported successful passivation of Si(Li)-based X-ray detectors operated above cryogenic temperatures.
The thick GEM (THGEM) [1] is an expanded GEM, economically produced in the PCB industry by simple drilling and etching in G-10 or other insulating materials (fig. 1). Similar to GEM, its operation is based on electron gas avalanche multiplication in sub-mm holes, resulting in very high gain and fast signals. Due to its large hole size, the THGEM is particularly efficient in transporting the electrons into and from the holes, leading to efficient single-electron detection and effective cascaded operation. The THGEM provides true pixilated radiation localization, ns signals, high gain and high rate capability. For a comprehensive summary of the THGEM properties, the reader is referred to [2, 3]. In this article we present a summary of our recent study on THGEM-based imaging, carried out with a 10x10 cm^2 double-THGEM detector.
We have developed large-area lithium-drifted silicon (Si(Li)) detectors to meet the unique requirements of the General Antiparticle Spectrometer (GAPS) experiment. GAPS is an Antarctic balloon-borne mission scheduled for the first flight in late 2020. The GAPS experiment aims to survey low-energy cosmic-ray antinuclei, particularly antideuterons, which are recognized as essentially background-free signals from dark matter annihilation or decay. The GAPS Si(Li) detector design is a thickness of 2.5 mm, diameter of 10 cm and 8 readout strips. The energy resolution of <4 keV (FWHM) for 20 to 100 keV X-rays at temperature of -35 to -45 C, far above the liquid nitrogen temperatures frequently used to achieve fine energy resolution, is required. We developed a high-quality Si crystal and Li-evaporation, diffusion and drift methods to form a uniform Li-drifted layer. Guard ring structure and optimal etching of the surface are confirmed to suppress the leakage current, which is a main source of noise. We found a thin un-drifted layer retained on the p-side effectively suppresses the leakage current. By these developments, we succeeded in developing the GAPS Si(Li) detector. As the ultimate GAPS instrument will require >1000 10-cm diameter Si(Li) detectors to achieve high sensitivity to rare antideuteron events, high-yield production is also a key factor for the success of the GAPS mission.
The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60--600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm x 12 cm x 12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13312 pixels are processed by 208 ASICs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASICs, and the obtained energy resolutions with the prototype Si and CdTe pixel sensors are 1.0--2.0 keV (FWHM) at 60 keV and 1.6--2.5 keV (FWHM) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keV (FWHM) at 356 keV and 10.5 keV (FWHM) at 662 keV, respectively, which satisfy the instrument requirements for the SGD Compton camera (better than 2%). Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype.
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