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Recent experiments reveal that a scanning tunneling microscopy (STM) probe tip can generate a highly localized strain field in a graphene drumhead, which in turn leads to pseudomagnetic fields in the graphene that can spatially confine graphene charge carriers in a way similar to a lithographically defined quantum dot (QD). While these experimental findings are intriguing, their further implementation in nanoelectronic devices hinges upon the knowledge of key underpinning parameters, which still remain elusive. In this paper, we first summarize the experimental measurements of the deformation of graphene membranes due to interactions with the STM probe tip and a back gate electrode. We then carry out systematic coarse grained, (CG), simulations to offer a mechanistic interpretation of STM tip-induced straining of the graphene drumhead. Our findings reveal the effect of (i) the position of the STM probe tip relative to the graphene drumhead center, (ii) the sizes of both the STM probe tip and graphene drumhead, as well as (iii) the applied back-gate voltage, on the induced strain field and corresponding pseudomagnetic field. These results can offer quantitative guidance for future design and implementation of reversible and on-demand formation of graphene QDs in nanoelectronics.
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We study the effects of strain on the electronic properties and persistent current characteristics of a graphene ring using the Dirac representation. For a slightly deformed graphene ring flake, one obtains sizable pseudomagnetic (gauge) fields that may effectively reduce or enhance locally the applied magnetic flux through the ring. Flux-induced persistent currents in a flat ring have full rotational symmetry throughout the structure; in contrast, we show that currents in the presence of a circularly symmetric deformation are strongly inhomogeneous, due to the underlying symmetries of graphene. This result illustrates the inherent competition between the `real magnetic field and the `pseudo field arising from strains, and suggest an alternative way to probe the strength and symmetries of pseudomagnetic fields on graphene systems.
Many of the properties of graphene are tied to its lattice structure, allowing for tuning of charge carrier dynamics through mechanical strain. The graphene electro-mechanical coupling yields very large pseudomagnetic fields for small strain fields, up to hundreds of Tesla, which offer new scientific opportunities unattainable with ordinary laboratory magnets. Significant challenges exist in investigation of pseudomagnetic fields, limited by the non-planar graphene geometries in existing demonstrations and the lack of a viable approach to controlling the distribution and intensity of the pseudomagnetic field. Here we reveal a facile and effective mechanism to achieve programmable extreme pseudomagnetic fields with uniform distributions in a planar graphene sheet over a large area by a simple uniaxial stretch. We achieve this by patterning the planar graphene geometry and graphene-based hetero-structures with a shape function to engineer a desired strain gradient. Our method is geometrical, opening up new fertile opportunities of strain engineering of electronic properties of 2D materials in general.
Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wrinkles also appear in the areas between the supporting regions. A detailed analysis of the strain distribution shows positive correlation between strain gradient and distances between borders of supporting regions. These results are confirmed by Raman spectroscopy by analysis the D band intensity, which is affected by an enhancement of intravalley scattering. Furthermore, scanning tunneling spectroscopy shows a local modification of the density of states near the graphene wrinkle and weak localization measurements indicate the enhancement of pseudomagnetic field-induced scattering. Therefore, we show that nanowire and nanorod substrates provide strain engineering and induction of pseudomagnetic fields in graphene. The control of graphene morphology by a modification of distances between supporting regions is promising for both further fundamental research and the exploration of innovative ways to fabricate pseudomagnetic field-based devices like sensors or filters.
There is a growing effort in creating chiral transport of sound waves. However, most approaches so far are confined to the macroscopic scale. Here, we propose a new approach suitable to the nanoscale which is based on pseudomagnetic fields. These fields are the analogon for sound of the pseudomagnetic field for electrons in strained graphene. In our proposal, they are created by simple geometrical modifications of an existing and experimentally proven phononic crystal design, the snowflake crystal. This platform is robust, scalable, and well-suited for a variety of excitation and readout mechanisms, among them optomechanical approaches.
The paper presents a theoretical description of the effects of strain induced by out-of-plane deformations on charge distributions and transport on graphene. A review of a continuum model for electrons using the Dirac formalism is complemented with elasticity theory to represent strain fields. The resulting model is cast in terms of scalar and pseudo-magnetic fields that control electron dynamics. Two distinct geometries, a bubble, and a fold are chosen to represent the most commonly observed deformations in experimental settings. It is shown that local charge accumulation regions appear in deformed areas, with a peculiar charge distribution that favors the occupation of one sublattice only. This unique phenomenon that allows distinguishing each carbon atom in the unit cell, is the manifestation of a sublattice symmetry broken phase. For specific parameters, resonant states appear in localized charged regions, as shown by the emergence of discrete levels in band structure calculations. These findings are presented in terms of intuitive pictures that exploit analogies with confinement produced by square barriers. In addition, electron currents through strained regions are spatially separated into their valley components, making possible the manipulation of electrons with different valley indices. The degree of valley filtering (or polarization) for a specific system can be controlled by properly designing the strained area. The comparison between efficiencies of filters built with this type of geometries identifies extended deformations as better valley filters. A proposal for their experimental implementations as a component of devices and a discussion for potential observation of novel physics in strained structures are presented at the end of the article.
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