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Programmable Extreme Pseudomagnetic Fields in Graphene by a Uniaxial Stretch

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 Added by Teng Li
 Publication date 2015
  fields Physics
and research's language is English




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Many of the properties of graphene are tied to its lattice structure, allowing for tuning of charge carrier dynamics through mechanical strain. The graphene electro-mechanical coupling yields very large pseudomagnetic fields for small strain fields, up to hundreds of Tesla, which offer new scientific opportunities unattainable with ordinary laboratory magnets. Significant challenges exist in investigation of pseudomagnetic fields, limited by the non-planar graphene geometries in existing demonstrations and the lack of a viable approach to controlling the distribution and intensity of the pseudomagnetic field. Here we reveal a facile and effective mechanism to achieve programmable extreme pseudomagnetic fields with uniform distributions in a planar graphene sheet over a large area by a simple uniaxial stretch. We achieve this by patterning the planar graphene geometry and graphene-based hetero-structures with a shape function to engineer a desired strain gradient. Our method is geometrical, opening up new fertile opportunities of strain engineering of electronic properties of 2D materials in general.



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Recent experiments reveal that a scanning tunneling microscopy (STM) probe tip can generate a highly localized strain field in a graphene drumhead, which in turn leads to pseudomagnetic fields in the graphene that can spatially confine graphene charge carriers in a way similar to a lithographically defined quantum dot (QD). While these experimental findings are intriguing, their further implementation in nanoelectronic devices hinges upon the knowledge of key underpinning parameters, which still remain elusive. In this paper, we first summarize the experimental measurements of the deformation of graphene membranes due to interactions with the STM probe tip and a back gate electrode. We then carry out systematic coarse grained, (CG), simulations to offer a mechanistic interpretation of STM tip-induced straining of the graphene drumhead. Our findings reveal the effect of (i) the position of the STM probe tip relative to the graphene drumhead center, (ii) the sizes of both the STM probe tip and graphene drumhead, as well as (iii) the applied back-gate voltage, on the induced strain field and corresponding pseudomagnetic field. These results can offer quantitative guidance for future design and implementation of reversible and on-demand formation of graphene QDs in nanoelectronics.
113 - D. Faria , A. Latge , S. E. Ulloa 2013
We study the effects of strain on the electronic properties and persistent current characteristics of a graphene ring using the Dirac representation. For a slightly deformed graphene ring flake, one obtains sizable pseudomagnetic (gauge) fields that may effectively reduce or enhance locally the applied magnetic flux through the ring. Flux-induced persistent currents in a flat ring have full rotational symmetry throughout the structure; in contrast, we show that currents in the presence of a circularly symmetric deformation are strongly inhomogeneous, due to the underlying symmetries of graphene. This result illustrates the inherent competition between the `real magnetic field and the `pseudo field arising from strains, and suggest an alternative way to probe the strength and symmetries of pseudomagnetic fields on graphene systems.
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