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Register a new userPropagation of defects in doped magnetic materials of different dimensionality
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Defects intentionally introduced into magnetic materials often have a profound effect on the physical properties. Specifically tailored neutron spectroscopic experiments can provide detailed information on both the local exchange interactions and the local distances between the magnetic atoms around the defects. This is demonstrated for manganese dimer excitations observed for the magnetically diluted three- and two-dimensional compounds KMn(x)Zn(1-x)F(3) and K(2)Mn(x)Zn(1-x)F(4), respectively. The resulting local exchange interactions deviate up to 10% from the average, and the local Mn-Mn distances are found to vary stepwise with increasing internal pressure due to the Mn/Zn substitution. Our analysis qualitatively supports the theoretically predicted decay of atomic displacements according to 1/r**2, 1/r, and constant (for three-, two-, and one-dimensional compounds, respectively) where r denotes the distance of the displaced atoms from the defect.
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Defects intentionally introduced into magnetic materials often have a profound effect on the physical properties. Specifically tailored neutron spectroscopic experiments can provide detailed information on both the local exchange interactions and the local distances between the magnetic atoms around the defects. This is demonstrated for manganese dimer excitations observed for the magnetically diluted three-, two- and one-dimensional compounds KMnxZn1-xF3, K2MnxZn1-xF4 and CsMnxMg1-xBr3, respectively, with x=0.10. The resulting local exchange interactions deviate up to 10% from the average, and the local Mn-Mn distances are found to vary stepwise with increasing internal chemical pressure due to the Mn/Zn or Mn/Mg substitution. Our analysis qualitatively supports the theoretically predicted decay of atomic displacements according to 1/r**2, 1/r and constant (for three-, two- and one-dimensional compounds, respectively) where r denotes the distance of the displaced atoms from the defect.
High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V_N). Calculated results are in agreement with experimental observations and facts of real Cr-doped AlN samples and their synthesis. Our first-principles results are useful to elucidating the mechanism for the ferromagnetism and exploring high-performance Cr-doped AlN diluted magnetic semiconductors.
Inelastic neutron scattering experiments were performed to study manganese(II) dimer excitations in the diluted one-, two-, and three-dimensional compounds CsMn(x)Mg(1-x)Br(3), K(2)Mn(x)Zn(1-x)F(4), and KMn(x)Zn(1-x)F(3) (x<0.10), respectively. The transitions from the ground-state singlet to the excited triplet, split into a doublet and a singlet due to the single-ion anisotropy, exhibit remarkable fine structures. These unusual features are attributed to local structural inhomogeneities induced by the dopant Mn atoms which act like lattice defects. Statistical models support the theoretically predicted decay of atomic displacements according to 1/r**2, 1/r, and constant (for three-, two-, and one-dimensional compounds, respectively) where r denotes the distance of the displaced atoms from the defect. The observed fine structures allow a direct determination of the local exchange interactions J, and the local intradimer distances R can be derived through the linear law dJ/dR.
The information carrier of modern technologies is the electron charge whose transport inevitably generates Joule heating. Spin-waves, the collective precessional motion of electron spins, do not involve moving charges and thus avoid Joule heating. In this respect, magnonic devices in which the information is carried by spin-waves attract interest for low-power computing. However implementation of magnonic devices for practical use suffers from low spin-wave signal and on/off ratio. Here we demonstrate that cubic anisotropic materials can enhance spin-wave signals by improving spin-wave amplitude as well as group velocity and attenuation length. Furthermore, cubic anisotropic material shows an enhanced on/off ratio through a laterally localized edge mode, which closely mimics the gate-controlled conducting channel in traditional field-effect transistors. These attractive features of cubic anisotropic materials will invigorate magnonics research towards wave-based functional devices.
We show the evolution of Raman spectra with number of graphene layers on different substrates, SiO$_{2}$/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the preparation of sample for the same number of graphene layers. The 2D Raman band has characteristic line shapes in single and bilayer graphene, capturing the differences in their electronic structure. The defects have a significant influence on the G band peak position for the single layer graphene: the frequency shows a blue shift upto 12 cm$^{-1}$ depending on the intensity of the D Raman band, which is a marker of the defect density. Most surprisingly, Raman spectra of graphene on the conducting ITO plates show a lowering of the G mode frequency by $sim$ 6 cm$^{-1}$ and the 2D band frequency by $sim$ 20 cm$^{-1}$. This red-shift of the G and 2D bands is observed for the first time in single layer graphene.
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