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Register a new userDefect propagation in one-, two-, and three-dimensional compounds doped by magnetic atoms
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Inelastic neutron scattering experiments were performed to study manganese(II) dimer excitations in the diluted one-, two-, and three-dimensional compounds CsMn(x)Mg(1-x)Br(3), K(2)Mn(x)Zn(1-x)F(4), and KMn(x)Zn(1-x)F(3) (x<0.10), respectively. The transitions from the ground-state singlet to the excited triplet, split into a doublet and a singlet due to the single-ion anisotropy, exhibit remarkable fine structures. These unusual features are attributed to local structural inhomogeneities induced by the dopant Mn atoms which act like lattice defects. Statistical models support the theoretically predicted decay of atomic displacements according to 1/r**2, 1/r, and constant (for three-, two-, and one-dimensional compounds, respectively) where r denotes the distance of the displaced atoms from the defect. The observed fine structures allow a direct determination of the local exchange interactions J, and the local intradimer distances R can be derived through the linear law dJ/dR.
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Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by doping in electric double-layer field-effect transistors (FET). However, for the case of single layer NbSe$_2$, FET doping is limited to $approx 1times 10^{14}$ cm$^{-2}$, while a somewhat larger charge injection can be obtained via deposition of K atoms. Here, by performing ARPES, STM, quasiparticle interference measurements, and first principles calculations we show that a misfit compound formed by sandwiching NbSe$_2$ and LaSe layers behaves as a NbSe$_2$ single layer with a rigid doping of $0.55-0.6$ electrons per Nb atom or $approx 6times 10^{14}$ cm$^{-2}$. Due to this huge doping, the $3times3$ charge density wave is replaced by a $2times2$ order with very short coherence length. As a tremendous number of different misfit compounds can be obtained by sandwiching TMDs layers with rock salt or other layers, our work paves the way to the exploration of heavily doped 2D TMDs over an unprecedented wide range of doping.
Crystallography, the primary method for determining the three-dimensional (3D) atomic positions in crystals, has been fundamental to the development of many fields of science. However, the atomic positions obtained from crystallography represent a global average of many unit cells in a crystal. Here, we report, for the first time, the determination of the 3D coordinates of thousands of individual atoms and a point defect in a material by electron tomography with a precision of ~19 picometers, where the crystallinity of the material is not assumed. From the coordinates of these individual atoms, we measure the atomic displacement field and the full strain tensor with a 3D resolution of ~1nm^3 and a precision of ~10^-3, which are further verified by density functional theory calculations and molecular dynamics simulations. The ability to precisely localize the 3D coordinates of individual atoms in materials without assuming crystallinity is expected to find important applications in materials science, nanoscience, physics and chemistry.
Defects intentionally introduced into magnetic materials often have a profound effect on the physical properties. Specifically tailored neutron spectroscopic experiments can provide detailed information on both the local exchange interactions and the local distances between the magnetic atoms around the defects. This is demonstrated for manganese dimer excitations observed for the magnetically diluted three- and two-dimensional compounds KMn(x)Zn(1-x)F(3) and K(2)Mn(x)Zn(1-x)F(4), respectively. The resulting local exchange interactions deviate up to 10% from the average, and the local Mn-Mn distances are found to vary stepwise with increasing internal pressure due to the Mn/Zn substitution. Our analysis qualitatively supports the theoretically predicted decay of atomic displacements according to 1/r**2, 1/r, and constant (for three-, two-, and one-dimensional compounds, respectively) where r denotes the distance of the displaced atoms from the defect.
Surface alloying is a straightforward route to control and modify the structure and electronic properties of surfaces. Here, We present a systematical study on the structural and electronic properties of three novel rare earth-based intermetallic compounds, namely ReAu2 (Re = Tb, Ho, and Er), on Au(111) via directly depositing rare-earth metals onto the hot Au(111) surface. Scanning tunneling microscopy/spectroscopy measurements reveal the very similar atomic structures and electronic properties, e.g. electronic states, and surface work functions, for all these intermetallic compound systems due to the physical and chemical similarities between these rare earth elements. Further, these electronic properties are periodically modulated by the moire structures caused by the lattice mismatches between ReAu2 and Au(111). These periodically modulated surfaces could serve as templates for the self-assembly of nanostructures. Besides, these two-dimensional rare earth-based intermetallic compounds provide platforms to investigate the rare earth related catalysis, magnetisms, etc., in the lower dimensions.
One novel family of two-dimensional IV-V compounds have been proposed, whose dynamical stabilities and electronic properties have been systematically investigated using the density functional theory. Extending from our previous work, two phases of carbon phosphorus bilayers alpha- and beta-C$_{2}$P$_{2}$ have been proposed. Both of them are dynamically stable and thermally stable at 300K. They possess intrinsic HSE gaps of 2.70 eV and 2.67 eV, respectively. Similar alpha- and beta-C$_{2}$Y$_{2}$ (Y= As, Sb, and Bi) can be obtained if the phosphorus atoms in the alpha- and beta-C$_{2}$P$_{2}$ replaced by other pnictogens, respectively. If the C atoms in the alpha- and beta-C$_{2}$Y$_{2}$ (Y= P, As, Sb, and Bi) are further replaced by other IV elements X (X=Si, Ge, Sn, and Pb), respectively, more derivatives of alpha- and beta-X$_{2}$Y$_{2}$ (Y=N, P, As, Sb, and Bi) also can be obtained. It was found that the majority of them are dynamically stable. The proposed compounds range from metal to insulators depending on their constitutions. All insulated compounds can undergo a transition from insulator to metal induced by biaxial strain. Some of them can undergo a transition from indirect band gap to direct band gap. These new compounds can become candidates as photovoltaic device, thermoelectric material field as well as lamellated superconductors.
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