Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userAnisotropy of the molecular magnet V$_{15}$ spin Hamiltonian detected by high-field electron spin resonance
161
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The molecular compound K$_6$[V$^{IV}_{15}$As$^{III}_6$O$_{42}$(H$_2$O)] $cdot$ 8H$_2$O, in short V$_{15}$, has shown important quantum effects such as coherent spin oscillations. The details of the spin quantum dynamics depend on the exact form of the spin Hamiltonian. In this study, we present a precise analysis of the intramolecular interactions in V$_{15}$. To that purpose, we performed high-field electron spin resonance measurements at 120 GHz and extracted the resonance fields as a function of crystal orientation and temperature. The data are compared against simulations using exact diagonalization to obtain the parameters of the molecular spin Hamiltonian.
rate research
Read More
We present muon spin lattice relaxation measurements in the V15 spin 1/2 molecular nano-magnet. We find that the relaxation rate in low magnetic fields (<5 kG) is temperature independent below ~10 K, implying that the molecular spin is dynamically fluctuating down to 12 mK. These measurements show that the fluctuation time increases as the temperature is decreased and saturates at a value of ~6 nsec at low temperatures. The fluctuations are attributed to V15 molecular spin dynamics perpendicular to the applied magnetic field direction, induced by coupling between the molecular spin and nuclear spin bath in the system.
Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model devices. Societal applications require transposing this knowledge to nano-objects embedded within vertical solid-state junctions, which can advantageously harness spintronics to address these quantum properties thanks to ferromagnetic electrodes and high-quality interfaces. The challenge here is to ascertain the devices effective, buried nanotransport path, and to electrically involve these nano-objects in this path by shrinking the device area from the macro- to the nano-scale while maintaining high structural/chemical quality across the heterostructure. Weve developed a low-tech, resist- and solvent-free technological process that can craft nanopillar devices from entire in-situ grown heterostructures, and use it to study magnetotransport between two Fe and Co ferromagnetic electrodes across a functional magnetic CoPc molecular layer. We observe how spin-flip transport across CoPc molecular spin chains promotes a specific magnetoresistance effect, and alters the nanojunctions magnetism through spintronic anisotropy. In the process, we identify three magnetic units along the effective nanotransport path thanks to a macrospin model of magnetotransport. Our work elegantly connects the until now loosely associated concepts of spin-flip spectroscopy, magnetic exchange bias and magnetotransport due to molecular spin chains, within a solid-state device. We notably measure a 5.9meV energy threshold for magnetic decoupling between the Fe layers buried atoms and those in contact with the CoPc layer forming the so-called spinterface. This provides a first insight into the experimental energetics of this promising low-power information encoding unit.
Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to increase the spin relaxation time in the system. Created structures allow us to change an effective localization radius of electrons by external magnetic field. With the localization radius close to the size of a quantum dot group, we obtain fourfold increasing spin relaxation time $T_1$, as compared to conventional homogeneous quantum dot arrays. This effect is attributed to averaging of local magnetic fields related to nuclear spins $^{29}$Si and stabilization of $S_z$-polarization during electron back-and-forth motion within a quantum dot group.
In an easy-plane antiferromagnet with the Dzyaloshinskii-Moriya interaction (DMI), magnons are subject to an effective spin-momentum locking. An in-plane temperature gradient can generate interfacial accumulation of magnons with a specified polarization, realizing the magnon thermal Edelstein effect. We theoretically investigate the injection and detection of this thermally-driven spin polarization in an adjacent heavy metal with strong spin Hall effect. We find that the inverse spin Hall voltage depends monotonically on both temperature and the DMI but non-monotonically on the hard-axis anisotropy. Counterintuitively, the magnon thermal Edelstein effect is an even function of a magnetic field applied along the Neel vector.
The protocols for the control and readout of Nitrogen Vacancy (NV) centres electron spins in diamond offer an advanced platform for quantum computation, metrology and sensing. These protocols are based on the optical readout of photons emitted from NV centres, which process is limited by the yield of photons collection. Here we report on a novel principle for the detection of NV centres magnetic resonance in diamond by directly monitoring spin-preserving electron transitions through measurement of NV centre related photocurrent. The demonstrated direct detection technique offers a sensitive way for the readout of diamond NV sensors and diamond quantum devices on diamond chips. The Photocurrent Detection of Magnetic Resonance (PDMR) scheme is based on the detection of charge carriers promoted to the conduction band of diamond by the two-photon ionization of NV- centres. Optical detection of magnetic resonance (ODMR) and PDMR are compared, by performing both measurements simultaneously. The minima detected in the measured photocurrent at resonant microwave frequencies are attributed to the spin-dependent occupation probability of the NV- ground state, originating from spin-selective non-radiative transitions.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
