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Register a new userElectron supercollimation in graphene and Dirac fermion materials using one-dimensional disorder potentials
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Electron supercollimation, in which a wavepacket is guided to move undistorted along a selected direction, is a highly desirable property that has yet been realized experimentally. Disorder in general is expected to inhibit supercollimation. Here, we report a counter-intuitive phenomenon of electron supercollimation by disorder in graphene and related Dirac fermion materials. We show that one can use one-dimensional disorder potentials to control electron wavepacket transport. This is distinct from known systems where an electron wavepacket would be further spread by disorder and hindered in the potential fluctuating direction. The predicted phenomenon has significant implications in the understanding and applications of electron transport in Dirac fermion materials.
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Three dimensionally curved graphene with a wide range of curvature radii from 25 nm to 1000 nm demonstrates that nano-scale curvature is a new degree of freedom to tune the transport properties of graphene by manipulating 2D electron kinetics on 3D curved surfaces.
Exciton problem is solved in the two-dimensional Dirac model with allowance for strong electron-hole attraction. The exciton binding energy is assumed smaller than but comparable to the band gap. The exciton wavefunction is found in the momentum space as a superposition of all four two-particle states including electron and hole states with both positive and negative energies. The matrix element of exciton generation is shown to depend on the additional components of the exciton wavefunction. Both the Coulomb and the Rytova-Keldysh potentials are considered. The dependence of the binding energy on the coupling constant is analyzed for the ground and first excited exciton states. The binding energy and the oscillator strength are studied as functions of the environmental-dependent dielectric constant for real transition metal dichalcogenide monolayers. We demonstrate that the multicomponent nature of the exciton wavefunction is crucial for description of resonant optical properties of two-dimensional Dirac systems.
After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material was relevant for both fundamental spintronics and future applications. Over the decade since, exciting results have made the field of graphene spintronics blossom, and a second generation of studies has extended to new two-dimensional (2D) compounds. This Colloquium reviews recent theoretical and experimental advances on electronic spin transport in graphene and related 2D materials, focusing on emergent phenomena in van der Waals heterostructures and the new perspectives provided by them. These phenomena include proximity-enabled spin-orbit effects, the coupling of electronic spin to light, electrical tunability, and 2D magnetism.
Transverse electric (TE) modes can not propagate through the conducting solids. This is because the continuum of particle-hole excitations of conductors contaminates with the TE mode and dampes it out. But in solids hosting tilted Dirac cone (TDC) that admit a description in terms of a modified Minkowski spacetime, the new spacetime structure remedies this issue and therefore a tilted Dirac cone material (TDM) supports the propagation of an undamped TE mode which is sustained by density fluctuations. The resulting TE mode propagates at fermionic velocities which strongly confines the mode to the surface of the two-dimensional (2D) TDM.
Using a tight-binding model, we study a line defect in graphene where a bulk energy gap is opened by sublattice symmetry breaking. It is found that sublattice symmetry breaking may induce many configurations that correspond to different band spectra. In particular, a gapless state is observed for a configuration which hold a mirror symmetry with respect to the line defect. We find that this gapless state originates from the line defect and is independent of the width of the graphene ribbon, the location of the line defect, and the potentials in the edges of the ribbon. In particular, the gapless state can be controlled by the gate voltage embedded below the line defect. Finally, this result is supported with conductance calculations. This study shows how a quantum channel could be constructed using a line defect, and how the quantum channel can be controlled by tuning the gate voltage embedded below the line defect.
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