No Arabic abstract
Using a tight-binding model, we study a line defect in graphene where a bulk energy gap is opened by sublattice symmetry breaking. It is found that sublattice symmetry breaking may induce many configurations that correspond to different band spectra. In particular, a gapless state is observed for a configuration which hold a mirror symmetry with respect to the line defect. We find that this gapless state originates from the line defect and is independent of the width of the graphene ribbon, the location of the line defect, and the potentials in the edges of the ribbon. In particular, the gapless state can be controlled by the gate voltage embedded below the line defect. Finally, this result is supported with conductance calculations. This study shows how a quantum channel could be constructed using a line defect, and how the quantum channel can be controlled by tuning the gate voltage embedded below the line defect.
Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular 5-5-8 line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated valley valve device, a critical component for valleytronics.
Graphene, a two dimensional (2D) carbon sheet, acquires many of its amazing properties from the Dirac point nature of its electronic structures with negligible spin-orbit coupling. Extending to 3D space, graphene networks with negative curvature, called Mackay-Terrones crystals (MTC), have been proposed and experimentally explored, yet their topological properties remain to be discovered. Based on the first-principle calculations, we report an all-carbon MTC with topologically non-trivial electronic states by exhibiting node-lines in bulk. When the node-lines are projected on to surfaces to form circles, drumhead like flat surface bands nestled inside of the circles are formed. The bulk node-line can evolve into 3D Dirac point in the absence of inversion symmetry, which has shown its plausible existence in recent experiments.
The electronic properties of graphene superlattices have attracted intense interest that was further stimulated by the recent observation of novel many-body states at magic angles in twisted bilayer graphene (BLG). For very small (marginal) twist angles of 0.1 deg, BLG has been shown to exhibit a strain-accompanied reconstruction that results in submicron-size triangular domains with the Bernal stacking. If the interlayer bias is applied to open an energy gap inside the domain regions making them insulating, marginally-twisted BLG is predicted to remain conductive due to a triangular network of chiral one-dimensional (1D) states hosted by domain boundaries. Here we study electron transport through this network and report giant Aharonov-Bohm oscillations persisting to temperatures above 100 K. At liquid helium temperatures, the network resistivity exhibits another kind of oscillations that appear as a function of carrier density and are accompanied by a sign-changing Hall effect. The latter are attributed to consecutive population of the flat minibands formed by the 2D network of 1D states inside the gap. Our work shows that marginally twisted BLG is markedly distinct from other 2D electronic systems, including BLG at larger twist angles, and offers a fascinating venue for further research.
The adiabatic transport properties of U(1) invariant systems are determined by the dependence of the ground state energy on the twisted boundary condition. We examine a one-dimensional tight-binding model in the presence of a single defect and find that the ground state energy of the model shows a universal dependence on the twist angle that can be fully characterized by the transmission coefficient of the scattering by the defect. We identify resulting pathological behaviors of Drude weights in the large system size limit: (i) both the linear and nonlinear Drude weights depend on the twist angle and (ii) the $N$-th order Drude weight diverges proportionally to the $(N-1)$-th power of the system size. To clarify the physical implication of the divergence, we simulate the real-time dynamics of the tight-binding model under a static electric field and show that the divergence does not necessarily imply the large current. Furthermore, we address the relation between our results and the boundary conformal field theory.
A principal motivation to develop graphene for future devices has been its promise for quantum spintronics. Hyperfine and spin-orbit interactions are expected to be negligible in single-layer graphene. Spin transport experiments, on the other hand, show that graphenes spin relaxation is orders of magnitude faster than predicted. We present a quantum interference measurement that disentangles sources of magnetic and non-magnetic decoherence in graphene. Magnetic defects are shown to be the primary cause of spin relaxation, while spin-orbit interaction is undetectably small.