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Register a new userEvidence of the side jump mechanism in the anomalous Hall effect in paramagnets
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Persistent confusion has existed between the intrinsic (Berry curvature) and the side jump mechanisms of anomalous Hall effect (AHE) in ferromagnets. We provide unambiguous identification of the side jump mechanism, in addition to the skew scattering contribution in epitaxial paramagnetic Ni$_{34}$Cu$_{66}$ thin films, in which the intrinsic contribution is by definition excluded. Furthermore, the temperature dependence of the AHE further reveals that the side jump mechanism is dominated by the elastic scattering.
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The role of electron-phonon scattering in finite-temperature anomalous Hall effect is still poorly understood. In this work, we present a Boltzmann theory for the side-jump contribution from electron-phonon scattering, which is derived from the microscopic quantum mechanical theory. We show that the resulting phonon side-jump conductivity generally approaches different limiting values in the high and low temperature limits, and hence can exhibit strong temperature dependence in the intermediate temperature regime. Our theory is amenable to ab initio treatment, which makes quantitative comparison between theoretical and experimental results possible.
We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pumping technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50%$) for about 10% of Ta. In contrast the SHA in AuW does not exceed + 0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than $85,muOmega.cm$), are promising for spintronic devices exploiting the SHE.
A short review paper for the quantum anomalous Hall effect. A substantially extended one is published as Adv. Phys. 64, 227 (2015).
The side-jump effect is a manifestation of the spin orbit interaction in electron scattering from an atom/ion/impurity. The effect has a broad interest because of its conceptual importance for generic spin-orbital physics, in particular the effect is widely discussed in spintronics. We reexamine the effect accounting for the exact nonperturbative electron wave function inside the atomic core. We find that value of the effect is much smaller than estimates accepted in literature. The reduction factor is 1/Z^2, where Z is the nucleus charge of the atom/impurity. This implies that the side-jump effect is practically irrelevant for spintronics, the skew scattering and/or the intrinsic mechanism always dominate the anomalous Hall and spin Hall effects.
Time-reversal symmetry breaking is the basic physics concept underpinning many magnetic topological phenomena such as the anomalous Hall effect (AHE) and its quantized variant. The AHE has been primarily accompanied by a ferromagnetic dipole moment, which hinders the topological quantum states and limits data density in memory devices, or by a delicate noncollinear magnetic order with strong spin decoherence, both limiting their applicability. A potential breakthrough is the recent theoretical prediction of the AHE arising from collinear antiferromagnetism in an anisotropic crystal environment. This new mechanism does not require magnetic dipolar or noncollinear fields. However, it has not been experimentally observed to date. Here we demonstrate this unconventional mechanism by measuring the AHE in an epilayer of a rutile collinear antiferromagnet RuO$_2$. The observed anomalous Hall conductivity is large, exceeding 300 S/cm, and is in agreement with the Berry phase topological transport contribution. Our results open a new unexplored chapter of time-reversal symmetry breaking phenomena in the abundant class of collinear antiferromagnetic materials.
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