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Register a new userObservation of the Anomalous Hall Effect in a Collinear Antiferromagnet
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Time-reversal symmetry breaking is the basic physics concept underpinning many magnetic topological phenomena such as the anomalous Hall effect (AHE) and its quantized variant. The AHE has been primarily accompanied by a ferromagnetic dipole moment, which hinders the topological quantum states and limits data density in memory devices, or by a delicate noncollinear magnetic order with strong spin decoherence, both limiting their applicability. A potential breakthrough is the recent theoretical prediction of the AHE arising from collinear antiferromagnetism in an anisotropic crystal environment. This new mechanism does not require magnetic dipolar or noncollinear fields. However, it has not been experimentally observed to date. Here we demonstrate this unconventional mechanism by measuring the AHE in an epilayer of a rutile collinear antiferromagnet RuO$_2$. The observed anomalous Hall conductivity is large, exceeding 300 S/cm, and is in agreement with the Berry phase topological transport contribution. Our results open a new unexplored chapter of time-reversal symmetry breaking phenomena in the abundant class of collinear antiferromagnetic materials.
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We report on the pressure evolution of the giant anomalous Hall effect (AHE) in the chiral antiferromagnet Mn$_3$Ge. The AHE originating from the non-vanishing Berry curvature in Mn$_3$Ge can be continuously tuned by application of hydrostatic pressure. At room temperature, the Hall signal changes sign as a function of pressure and vanishes completely at $p=1.53$ GPa. Even though the Hall conductivity changes sign upon increasing pressure, the room-temperature saturation value of 23 ${rm Omega^{-1}cm^{-1}}$ at 2.85 GPa is remarkably high and comparable to the saturation value at ambient pressure of about 40 ${rm Omega^{-1}cm^{-1}}$. The change in the Hall conductivity can be directly linked to a gradual change of the size of the in-plane components of the Mn moments in the non-collinear triangular magnetic structure. Our findings, therefore, provide a route for tuning of the AHE in the chiral antiferromagnetic Mn$_3$Ge.
The two dimensional kagome spin lattice structure of Mn atoms in the family of Mn$_3$X non-collinear antiferromagnets are providing substantial excitement in the exploration of Berry curvature physics and the associated non-trivial magnetotransport responses. Much of these studies are performed in the hexagonal systems, mainly Mn$_3$Sn and Mn$_3$Ge, with the kagome planes having their normal along the [001] direction. In this manuscript, we report our study in the cubic Mn$_3$Pt thin films with their kagome planes normal to the [111] crystal axis. Our studies reveal a hole conduction dominant Hall response with a non-monotonic temperature dependence of anomalous Hall conductivity (AHC), increasing from 9 $Omega^{-1}$cm$^{-1}$ at room temperature to 29 $Omega^{-1}$cm$^{-1}$ at 100 K, followed by a drop and unexpected sign-reversal at lower temperatures. Similar sign reversal is also observed in magnetoresistance measurements. We attribute this sign reversal to the transition from a Berry curvature dominated AHC at high temperature to a weak canted ferromagnetic AHC response at lower temperature, below 70 K, caused by the reorientation of Mn moments out of the kagome plane. Our above results in thin films of Mn$_3$Pt make advances in their integration with room temperature antiferromagnetic spintronics.
We report on Cr doping effect in Mn3Sn polycrystalline films with both uniform and modulation doping. It is found that Cr doping with low concentration does not cause notable changes to the structural and magnetic properties of Mn3Sn, but it significantly enhances the anomalous Hall conductivity, particularly for modulation-doped samples at low temperature. A Hall conductivity as high as 184.8 {Omega}-1 cm-1 is obtained for modulation-doped samples at 50 K, in a sharp contrast to vanishingly small values for undoped samples at the same temperature. We attribute the enhancement to the change of Fermi level induced by Cr doping
While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moire potential.
We have studied the longitudinal spin Seebeck effect in a polar antiferromagnet $alpha$-Cu$_{2}$V$_{2}$O$_{7}$ in contact with a Pt film. Below the antiferromagnetic transition temperature of $alpha$-Cu$_{2}$V$_{2}$O$_{7}$, spin Seebeck voltages whose magnetic field dependence is similar to that reported in antiferromagnetic MnF$_{2}$$mid$Pt bilayers are observed. Though a small weak-ferromagnetic moment appears owing to the Dzyaloshinskii-Moriya interaction in $alpha$-Cu$_{2}$V$_{2}$O$_{7}$, the magnetic field dependence of spin Seebeck voltages is found to be irrelevant to the weak ferromagnetic moments. The dependences of the spin Seebeck voltages on magnetic fields and temperature are analyzed by a magnon spin current theory. The numerical calculation of spin Seebeck voltages using magnetic parameters of $alpha$-Cu$_{2}$V$_{2}$O$_{7}$ determined by previous neutron scattering studies reveals that the magnetic-field and temperature dependences of the spin Seebeck voltages for $alpha$-Cu$_{2}$V$_{2}$O$_{7}$$mid$Pt are governed by the changes in magnon lifetimes with magnetic fields and temperature.
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