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Register a new userTheory of phonon side jump contribution in Anomalous Hall transport
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The role of electron-phonon scattering in finite-temperature anomalous Hall effect is still poorly understood. In this work, we present a Boltzmann theory for the side-jump contribution from electron-phonon scattering, which is derived from the microscopic quantum mechanical theory. We show that the resulting phonon side-jump conductivity generally approaches different limiting values in the high and low temperature limits, and hence can exhibit strong temperature dependence in the intermediate temperature regime. Our theory is amenable to ab initio treatment, which makes quantitative comparison between theoretical and experimental results possible.
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Persistent confusion has existed between the intrinsic (Berry curvature) and the side jump mechanisms of anomalous Hall effect (AHE) in ferromagnets. We provide unambiguous identification of the side jump mechanism, in addition to the skew scattering contribution in epitaxial paramagnetic Ni$_{34}$Cu$_{66}$ thin films, in which the intrinsic contribution is by definition excluded. Furthermore, the temperature dependence of the AHE further reveals that the side jump mechanism is dominated by the elastic scattering.
Exciton Valley Hall effect is the spatial separation of the valley-tagged excitons in the presence of a drag force. Usually, the effect is associated with the anomalous velocity acquired by the particles due to the Berry curvature of the Bloch bands. Here we show that the anomalous velocity plays no role in the exciton valley Hall effect, which is governed by the side-jump and skew scattering mechanisms. We develop microscopic theory of the exciton valley Hall effect in the presence of synthetic electric field and phonon drag and calculate all relevant contributions to the valley Hall current also demonstrating the cancellation of the anomalous velocity. The sensitivity of the effect to the origin of the drag force and to the scattering processes is shown. We extend the drift-diffusion model to account for the valley Hall effect and calculate the exciton density and valley polarization profiles.
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