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The optical response of a heavily doped quantum well, with two occupied subbands, has been investigated as a function of the electronic density. It is shown that the two optically active transitions are mutually coupled by dipole-dipole Coulomb interaction, which strongly renormalizes their absorption amplitude. In order to demonstrate this effect, we have measured a set of optical spectra on a device in which the electronic density can be tuned by the application of a gate voltage. Our results show that the absorption spectra can be correctly described only by taking into account the Coulomb coupling between the two transitions. As a consequence, the optical dipoles originating from intersubband transitions are not independent, but rather coupled oscillators with an adjustable strength.
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We present a quantum model to calculate the dipole-dipole coupling between electronic excitations in the conduction band of semiconductor quantum wells. We demonstrate that the coupling depends on a characteristic length, related to the overlap between microscopic current densities associated with each electronic excitation. As a result of the coupling, a macroscopic polarization is established in the quantum wells, corresponding to one or few bright collective modes of the electron gas. Our model is applied to derive a sum rule and to investigate the interplay between tunnel coupling and Coulomb interaction in the absorption spectrum of a dense electron gas.
We propose an implementation of the two-qubit gate in a quantum dot spin qubit system which is immune to charge noise problems. Our proposed implementation, if it could be realized in a physical system, would have the advantage of being robust against uncertainties and fluctuations in the tunnel coupling and barrier gate voltage pulse area. The key idea is to introduce an auxiliary dot and use an analog to the stimulated Raman adiabatic passage pulse sequence in three-level atomic systems, often referred to in the context of electron transport in quantum dot systems as Coherent Tunneling by Adiabatic Passage. Spin-dependent tunneling opens the possibility of performing two-qubit gate operations by this method.
In this article we perform the quantization of graphene plasmons using both a macroscopic approach based on the classical average electromagnetic energy and a quantum hydrodynamic model, in which graphene charge carriers are modeled as a charged fluid. Both models allow to take into account the dispersion of graphenes optical response, with the hydrodynamic model also allowing for the inclusion of non-local effects. Using both methods, the electromagnetic field mode-functions, and the respective frequencies, are determined for two different graphene structures. we show how to quantize graphene plasmons, considering that graphene is a dispersive medium, and taking into account both local and nonlocal descriptions. It is found that the dispersion of graphenes optical response leads to a non-trivial normalization condition for the mode-functions. The obtained mode-functions are then used to calculate the decay of an emitter, represented by a dipole, via the excitation of graphene surface plasmon-polaritons. The obtained results are compared with the total spontaneous decay rate of the emitter and a near perfect match is found in the relevant spectral range. It is found that non-local effects in graphenes conductivity, become relevant for the emission rate for small Fermi energies and small distances between the dipole and the graphene sheet.
Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create electronic analogs of optical devices having both positive and negative indices of refraction. Here, we use gate-controlled density with both p and n carrier types to demonstrate the analog of the fiber-optic guiding in graphene. Two basic effects are investigated: (1) bipolar p-n junction guiding, based on the principle of angle-selective transmission though the graphene p-n interface, and (2) unipolar fiber-optic guiding, using total internal reflection controlled by carrier density. Modulation of guiding efficiency through gating is demonstrated and compared to numerical simulations, which indicates that interface roughness limits guiding performance, with few-nanometer effective roughness extracted. The development of p-n and fiber-optic guiding in graphene may lead to electrically reconfigurable wiring in high-mobility devices.
In semiconductor heterostructures, bulk and structural inversion asymmetry and spin-orbit coupling induce a k-dependent spin splitting of valence and conduction subbands, which can be viewed as being caused by momentum-dependent crystal magnetic fields. This paper studies the influence of these effective magnetic fields on the intersubband spin dynamics in an asymmetric n-type GaAs/AlGaAs quantum well. We calculate the dispersions of intersubband spin plasmons using linear response theory. The so-called Dyakonov-Perel decoherence mechanism is inactive for collective intersubband excitations, i.e., crystal magnetic fields do not lead to decoherence of spin plasmons. Instead, we predict that the main signature of bulk and structural inversion asymmetry in intersubband spin dynamics is a three-fold, anisotropic splitting of the spin plasmon dispersion. The importance of many-body effects is pointed out, and conditions for experimental observation with inelastic light scattering are discussed.
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