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Register a new userA proposed spin qubit CNOT gate robust against noisy coupling
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We propose an implementation of the two-qubit gate in a quantum dot spin qubit system which is immune to charge noise problems. Our proposed implementation, if it could be realized in a physical system, would have the advantage of being robust against uncertainties and fluctuations in the tunnel coupling and barrier gate voltage pulse area. The key idea is to introduce an auxiliary dot and use an analog to the stimulated Raman adiabatic passage pulse sequence in three-level atomic systems, often referred to in the context of electron transport in quantum dot systems as Coherent Tunneling by Adiabatic Passage. Spin-dependent tunneling opens the possibility of performing two-qubit gate operations by this method.
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Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions cite{Brown2011}, superconducting circuits cite{Barends2014}, single photonscite{Kok2007}, single defects or atoms in diamond cite{Waldherr2014, Dolde2014} and silicon cite{Muhonen2014}, and semiconductor quantum dots cite{Veldhorst2014}, all with single qubit fidelities exceeding the stringent thresholds required for fault-tolerant quantum computing cite{Fowler2012}. Despite this, high-fidelity two-qubit gates in the solid-state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits cite{Barends2014}, as semiconductor systems have suffered from difficulties in coupling qubits and dephasing cite{Nowack2011, Brunner2011, Shulman2012}. Here, we show that these issues can be eliminated altogether using single spins in isotopically enriched siliconcite{Itoh2014} by demonstrating single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the original Loss-DiVincenzo proposal cite{Loss1998}. We realize CNOT gates via either controlled rotation (CROT) or controlled phase (CZ) operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is employed in the two-qubit CZ gate. The speed of the two-qubit CZ operations is controlled electrically via the detuning energy and we find that over 100 two-qubit gates can be performed within a two-qubit coherence time of 8 textmu s, thereby satisfying the criteria required for scalable quantum computation.
The optical response of a heavily doped quantum well, with two occupied subbands, has been investigated as a function of the electronic density. It is shown that the two optically active transitions are mutually coupled by dipole-dipole Coulomb interaction, which strongly renormalizes their absorption amplitude. In order to demonstrate this effect, we have measured a set of optical spectra on a device in which the electronic density can be tuned by the application of a gate voltage. Our results show that the absorption spectra can be correctly described only by taking into account the Coulomb coupling between the two transitions. As a consequence, the optical dipoles originating from intersubband transitions are not independent, but rather coupled oscillators with an adjustable strength.
We report coherent operation of a singlet-triplet qubit controlled by the arrangement of two electrons in an adjacent double quantum dot. The system we investigate consists of two pairs of capacitively coupled double quantum dots fabricated by electrostatic gates on the surface of a GaAs heterostructure. We extract the strength of the capacitive coupling between qubit and double quantum dot and show that the present geometry allows fast conditional gate operation, opening pathways to multi-qubit control and implementation of quantum algorithms with spin qubits.
Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of $T_{2rho}^*=2.4$ ms and $T_{2rho}^{rm Hahn}=9$ ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.
Electron spins hold great promise for quantum computation due to their long coherence times. An approach to realize interactions between distant spin-qubits is to use photons as carriers of quantum information. We demonstrate strong coupling between single microwave photons in a NbTiN high impedance cavity and a three-electron spin-qubit in a GaAs triple quantum dot. We resolve the vacuum Rabi mode splitting with a coupling strength of $g/2pisimeq31$ MHz and a qubit decoherence of $gamma_2/2pisimeq 20$ MHz. We can tune the decoherence electrostatically and obtain a minimal $gamma_2/2pisimeq 10$ MHz for $g/2pisimeq 23$ MHz. The dependence of the qubit-photon coupling strength on the tunable electric dipole moment of the qubit is measured directly using the ac Stark effect. Our demonstration of strong spin-photon interaction is an important step towards coherent long-distance coupling of spin-qubits.
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