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Register a new userAnomalous infrared spectra of hybridized phonons in type-I clathrate Ba$_8$Ga$_{16}$Ge$_{30}$
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The optical conductivity spectra of the rattling phonons in the clathrate Ba$_8$Ga$_{16}$Ge$_{30}$ are investigated in detail by use of the terahertz time-domain spectroscopy. The experiment has revealed that the lowest-lying vibrational mode of a Ba(2)$^{2+}$ ion consists of a sharp Lorentzian peak at 1.2 THz superimposed on a broad tail weighted in the lower frequency regime around 1.0 THz. With decreasing temperature, an unexpected linewidth broadening of the phonon peak is observed, together with monotonic softening of the phonon peak and the enhancement of the tail structure. These observed anomalies are discussed in terms of impurity scattering effects on the hybridized phonon system of rattling and acoustic phonons.
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We have investigated optical conductivity spectra of $n$- and $p$-type Ba$_8$Ga $_{16}$Sn$_{30}$ ($alpha$-BGS) with type-VIII clathrate structure, at temperatures from 296,K down to 6,K with a terahertz time-domain spectrometer (0.2,-,2.5,THz). The continuous spectra contributed from charge carriers are dispersive in this frequency range and also temperature- and carrier type-dependent. The Drude-Smith model taking multiple-scatterings of charge carriers into account well reproduces those data. The relaxation rate of the $n$-type carriers decreases more sharply than that in the $p$-type material, suggesting that a stronger electron-phonon interaction may exist in the $n$-type than in the $p$-type. On the other hand, the localized infrared-active modes observed at 1.3,THz and 1.7,THz, identified as the rattling phonons of the Ba$^{2+}$ ions quasi-on-center vibrations, become soft and broad significantly with decreasing temperature as well as observed in type-I BGS and BGG (Ba$_8$Ga$_{16}$Ge$_{30}$) clathrates. The softening in the $n$-type is smaller by about 30% than in the $p$-type, whereas the linewidth brodening is almost the same independently on the carrier type. The difference in the softening is discussed with a scenario where the interaction of rattling phonons with carriers can modify the anharmonic potential of the guest ions. The anomalous broadening at low temepratures is also discussed by the impurity-scattering model presented for a rattling-phonon system strongly hybridized with acoustic cage phonons.
With a terahertz time-domain spectrometer (0.3 - 3.0 THz) we have measured the optical conductivity of the type-I clathrate Ba$_8$Ga$_{16}$Sn$_{30}$ at temperatures from 300 K down to 7 K. Independent six spectra superimposed on the Drude conductivity are identified to infrared active vibrational modes of guest Ba ions and the cages. While the spectra of five higher-frequency modes depend hardly on temperature, the lowest-lying spectrum with a peak at 0.72 THz due to the Ba(2) ions off-centering vibration in the oversized cage changes with temperature characteristically. With lowering temperature, the spectral shape of this so-called rattling phonon continues to become so broad that the line-width amounts to be comparable to the peak frequency. Furthermore, below about 100 K, the single broad peak tends to split into two subpeaks. While this splitting can be explained by assuming a multi-well anharmonic potential, the strong enhancement of the line-width broadening toward low temperature, cannot be understood, since the Boltzmann factor generally sharpens the low-temperature spectra.
Atomic motion of guest atoms inside semiconducting clathrate cages is considered as an important source for the glasslike thermal behavior.69Ga and 71Ga Nuclear Magnetic Resonance (NMR) studies on type-I Ba8Ga16Sn30 show a clear low temperature relaxation peak attributed to the influence of Ba rattling dynamics on the framework-atom resonance, with a quadrupolar relaxation mechanism as the leading contribution. The data are analyzed using a two-phonon Raman process, according to a recent theory involving localized anharmonic oscillators. Excellent agreement is obtained using this model, with the parameters corresponding to a uniform array of localized oscillators with very large anharmonicity.
In the ternary system Sr-Cu-Ge, a clathrate type-I phase, Sr8Cu5.3Ge40.7 (a = 1.06311(3), exists close to the Zintl limit in a small temperature interval. Sr8Cu5.3Ge40.7 decomposes eutectoidally on cooling at 730{deg}C into (Ge), SrGe2 and tau1-SrCu2-xGe2+x. Phase equilibria at 700{deg}C have been established for the Ge rich part and are characterized by the appearance of only one ternary compound, tau1-SrCu2-xGe2+x, which crystallizes with the ThCr2Si2 structure type and forms a homogeneity range up to x=0.4 (a = 0.42850(4), c = 1.0370(1) nm). Additionally, the extent of the clathrate type-I solid solution Ba8-xSrxCuyGe46-y (5.2 < y < 5.4) has been studied at various temperatures. The clathrate type-I crystal structure (space group ) has been proven by X-ray single crystal diffraction on two single crystals with composition Sr8Cu5.3Ge40.7 (a = 1.06368(2) nm) and Ba4.9Sr3.1Cu5.3Ge40.7 (a = 1.06748(2) nm) measured at 300, 200 and 100 K. From the temperature dependency of the lattice parameters and the atomic displacement parameters, the thermal expansion coefficients, the Debye- and Einstein-temperatures and the speed of sound have been determined. From heat capacity measurements of Sr8Cu5.3Ge40.7 at low temperatures, the Sommerfeld coefficient and the Debye temperature have been extracted, whereas from a detailed analysis of these data at higher temperatures, Einstein branches of the phonon dispersion relation have been derived and compared with those obtained from the atomic displacement parameters. Electrical resistivity measurements of Sr8Cu5.3Ge40.7 reveal a rather metallic behaviour in the low temperature range (< 300 K).
A ternary type-I Si clathrate, K8AlxSi46-x, which is a candidate functional material composed of abundant non-toxic elements, was synthesized and its transport properties were investigated at temperatures ranging from 10 to 320 K. The synthesized compound is confirmed to be the ternary type-I Si clathrate K8Al7Si39 with a lattice parameter of a = 10.442 A using neutron powder diffractometry and inductively coupled plasma optical emission spectrometry. Electrical resistivity and Hall coefficient measurements revealed that K8Al7Si39 is a metal with electrons as the dominant carriers at a density of approximately 1x10^27 /m3. The value of Seebeck coefficient for K8Al7Si39 is negative and its absolute value increases with the temperature. The temperature dependence of the thermal conductivity is similar to that for a crystalline solid. The dimensionless figure of merit is approximately 0.01 at 300 K, which is comparable to that for other ternary Si clathrates.
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