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Register a new userNMR relaxation and rattling phonons in type-I Ba8Ga16Sn30 clathrate
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Atomic motion of guest atoms inside semiconducting clathrate cages is considered as an important source for the glasslike thermal behavior.69Ga and 71Ga Nuclear Magnetic Resonance (NMR) studies on type-I Ba8Ga16Sn30 show a clear low temperature relaxation peak attributed to the influence of Ba rattling dynamics on the framework-atom resonance, with a quadrupolar relaxation mechanism as the leading contribution. The data are analyzed using a two-phonon Raman process, according to a recent theory involving localized anharmonic oscillators. Excellent agreement is obtained using this model, with the parameters corresponding to a uniform array of localized oscillators with very large anharmonicity.
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We have investigated optical conductivity spectra of $n$- and $p$-type Ba$_8$Ga $_{16}$Sn$_{30}$ ($alpha$-BGS) with type-VIII clathrate structure, at temperatures from 296,K down to 6,K with a terahertz time-domain spectrometer (0.2,-,2.5,THz). The continuous spectra contributed from charge carriers are dispersive in this frequency range and also temperature- and carrier type-dependent. The Drude-Smith model taking multiple-scatterings of charge carriers into account well reproduces those data. The relaxation rate of the $n$-type carriers decreases more sharply than that in the $p$-type material, suggesting that a stronger electron-phonon interaction may exist in the $n$-type than in the $p$-type. On the other hand, the localized infrared-active modes observed at 1.3,THz and 1.7,THz, identified as the rattling phonons of the Ba$^{2+}$ ions quasi-on-center vibrations, become soft and broad significantly with decreasing temperature as well as observed in type-I BGS and BGG (Ba$_8$Ga$_{16}$Ge$_{30}$) clathrates. The softening in the $n$-type is smaller by about 30% than in the $p$-type, whereas the linewidth brodening is almost the same independently on the carrier type. The difference in the softening is discussed with a scenario where the interaction of rattling phonons with carriers can modify the anharmonic potential of the guest ions. The anomalous broadening at low temepratures is also discussed by the impurity-scattering model presented for a rattling-phonon system strongly hybridized with acoustic cage phonons.
With a terahertz time-domain spectrometer (0.3 - 3.0 THz) we have measured the optical conductivity of the type-I clathrate Ba$_8$Ga$_{16}$Sn$_{30}$ at temperatures from 300 K down to 7 K. Independent six spectra superimposed on the Drude conductivity are identified to infrared active vibrational modes of guest Ba ions and the cages. While the spectra of five higher-frequency modes depend hardly on temperature, the lowest-lying spectrum with a peak at 0.72 THz due to the Ba(2) ions off-centering vibration in the oversized cage changes with temperature characteristically. With lowering temperature, the spectral shape of this so-called rattling phonon continues to become so broad that the line-width amounts to be comparable to the peak frequency. Furthermore, below about 100 K, the single broad peak tends to split into two subpeaks. While this splitting can be explained by assuming a multi-well anharmonic potential, the strong enhancement of the line-width broadening toward low temperature, cannot be understood, since the Boltzmann factor generally sharpens the low-temperature spectra.
The optical conductivity spectra of the rattling phonons in the clathrate Ba$_8$Ga$_{16}$Ge$_{30}$ are investigated in detail by use of the terahertz time-domain spectroscopy. The experiment has revealed that the lowest-lying vibrational mode of a Ba(2)$^{2+}$ ion consists of a sharp Lorentzian peak at 1.2 THz superimposed on a broad tail weighted in the lower frequency regime around 1.0 THz. With decreasing temperature, an unexpected linewidth broadening of the phonon peak is observed, together with monotonic softening of the phonon peak and the enhancement of the tail structure. These observed anomalies are discussed in terms of impurity scattering effects on the hybridized phonon system of rattling and acoustic phonons.
We report the electrical resistivity, Hall coefficient, thermoelectric power, specific heat, and thermal conductivity on single crystals of the type-VIII clathrate Ba8Ga16Sn30 grown from Sn-flux. Negative S and R_H over a wide temperature range indicate that electrons dominate electrical transport properties. Both rho(T) and S(T) show typical behavior of a heavily doped semiconductor. The absolute value of S increases monotonically to 243 uV/K with increasing temperature up to 550 K. The large S may originate from the low carrier concentration n=3.7x10^19 cm^(-3). Hall mobility u_H shows a maximum of 62 cm^2/Vs around 70 K. The analysis of temperature dependence of u_H suggests a crossover of dominant scattering mechanism from ionized impurity to acoustic phonon scattering with increasing temperature. The existence of local vibration modes of Ba atoms in cages composed of Ga and Sn atoms is evidenced by analysis of experimental data of structural refinement and specific heat, which give an Einstein temperature of 50 K and a Debye temperature of 200 K. This local vibration of Ba atoms should be responsible for the low thermal conductivity (1.1 W/m K at 150 K). The potential of type-VIII clathrate compounds for thermoelectric application is discussed.
A ternary type-I Si clathrate, K8AlxSi46-x, which is a candidate functional material composed of abundant non-toxic elements, was synthesized and its transport properties were investigated at temperatures ranging from 10 to 320 K. The synthesized compound is confirmed to be the ternary type-I Si clathrate K8Al7Si39 with a lattice parameter of a = 10.442 A using neutron powder diffractometry and inductively coupled plasma optical emission spectrometry. Electrical resistivity and Hall coefficient measurements revealed that K8Al7Si39 is a metal with electrons as the dominant carriers at a density of approximately 1x10^27 /m3. The value of Seebeck coefficient for K8Al7Si39 is negative and its absolute value increases with the temperature. The temperature dependence of the thermal conductivity is similar to that for a crystalline solid. The dimensionless figure of merit is approximately 0.01 at 300 K, which is comparable to that for other ternary Si clathrates.
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