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Register a new userA Structural Phase Transition in Ca3Co4O9 Associated with Enhanced High Temperature Thermoelectric Properties
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Temperature dependent electrical resistivity, crystal structure and heat capacity measurements reveal a resistivity drop and metal to semiconductor transition corresponding to first order structural phase transition near 400 K in Ca3Co4O9. The lattice parameter c varies smoothly with increasing temperature, while anomalies in the a, b1 and b2 lattice parameters occur at ~ 400 K. Both Ca2CoO3 and CoO2 layers become distorted above ~ 400 K associated with the metal to semiconductor transport behavior change. Resistivity and heat capacity measurements as a function of temperature under magnetic field indicates low spin contribution to this transition. Reduced resistivity associated with this first order phase transition from metallic to semiconducting behavior enhances the thermoelectric properties at high temperatures and points to the metal to semiconductor transition as a mechanism for improved ZT in high temperature thermoelectric oxides.
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We have combined temperature dependent local structural measurements with first principles density functional calculations to develop a three dimensional local structure model of the misfit system [Ca2CoO3][CoO2]1.61 (referred to as Ca3Co4O9) which has a rock salt structure stacked incommensurately on a hexagonal CoO2 lattice. The local structural measurements reveal a low coordination of Co(2)-O bonds in the rock salt layer with large static structural disorder. The temperature dependence of the Co(1)-Co(1) bond correlations in the CoO2 layer are found to be normal above ~75K and with a very small static disorder component. An anomalous enhancement in the Co(1)-Co(1) correlations occurs at the onset of long-range magnetic order. Density functional computations suggest that the reduction of the coordination of Co(2) is due to the formation of chains of Co(2)Ox in the a-b plane linked to the Ca-O layers by c-axis Co(2)-O bonds. The reduced dimensionality introduced by the chain-like structure in the rock salt layer and high atomic order in the C
MoTe2 is a rare transition-metal ditelluride having two kinds of layered polytypes, hexagonal structure with trigonal prismatic Mo coordination and monoclinic structure with octahedral Mo coordination. The monoclinic distortion in the latter is caused by anisotropic metal-metal bonding. In this work, we have examined the Nb doping effect on both polytypes of MoTe2 and clarified a structural phase diagram for Mo1-xNbxTe2 containing four kinds of polytypes. A rhombohedral polytype crystallizing in polar space group has been newly identified as a high-temperature metastable phase at slightly Nb-rich composition. Considering the results of thermoelectric measurements and the first principles calculations, the Nb ion seemingly acts as a hole dopant in the rigid band scheme. On the other hand, the significant interlayer contraction upon the Nb doping, associated with the Te p-p hybridization, is confirmed especially for the monoclinic phase, which implies a shift of the p-band energy level. The origin of the metal-metal bonding in the monoclinic structure is discussed in terms of the d electron counting and the Te p-p hybridization.
Thin films of the misfit cobaltite Ca3Co4O9 were grown on (0001)-oriented (c-cut) sapphire substrates, using the pulsed-laser deposition techniques. The dependence of the thermoelectric/transport properties on the film growth conditions was investigated
We report an investigation of temperature- and doping-dependent thermoelectric behaviors of topological semimetal Cd3As2. The electrical conductivity, thermal conductivity, Seebeck coefficient, and figure of merit (ZT) are calculated by using Boltzmann transport theory. The calculated thermoelectric properties of the pristine Cd3As2 match well the experimental results. The electron or hole doping, especially the latter, is found improving much the thermoelectric behaviors of the material. The optimum merit ZT of Cd3As2 with electron doping is found to be about 0.5 at T=700 K with n=1x1020 cm-3, much larger than the maximum experimental value obtained for the pristine Cd3As2 (~0.15). For the p-type Cd3As2, the maximal value of the Seebeck coefficient as a function of temperature increases apparently with the increase of the hole doping concentration and its position shifts drastically towards the lower temperature region compared to that of the n-type Cd3As2, leading to the optimum merit ZT of about 0.5 obtained at low temperature of 500K (p=1x1020 cm-3) in the p-type Cd3As2.
Thermoelectric device is a promising next-generation energy solution owing to its capability to transform waste heat into useful electric energy, which can be realized in materials with high elec- tric conductivities and low thermal conductivities. A recently synthesized silicon allotrope of Si$_{24}$ features highly anisotropic crystal structure with nanometre-sized regular pores. Here, based on first-principles study without any empirical parameter, we show that the slightly doped Si$_{24}$ can pro- vide an order-of-magnitude enhanced thermoelectric figure of merit at room temperature, compared with the cubic diamond phase of silicon. We ascribe the enhancement to the intrinsic nanostructure formed by the nanopore array, which effectively hinders heat conduction while electric conductivity is maintained. This can be a viable option to enhance the thermoelectric figure of merit without further forming an extrinsic nanostructure. In addition, we propose a practical strategy to further diminish the thermal conductivity without affecting electric conductivity by confining rattling guest atoms in the pores.
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