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Register a new userSpin current and polarization reversal through a single-molecule magnet with ferromagnetic electrodes
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We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic exchange-couplings between the molecular magnet and transported electron-spin in the nonlinear tunneling regime. For the ferromagnetic exchangecoupling, spin current exhibits step- and basin-like behaviors in the parallel and antiparallel configurations respectively. An interesting observation is that the polarization reversal of spin-current can be realized and manipulated by the variation of bias voltage in the case of antiferromagnetic exchange-coupling with antiparallel lead-configuration, which may be useful in the development of spintronic devices, while the bias voltage can only affect the magnitude of spin-polarization in the ferromagnetic coupling.
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We study theoretically spin transport through a single-molecule magnet (SMM) in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normalmetallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.
Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the SMMs two spin-state of stored information that characterized by the maximum and minimum average value of the $Z$-component of the total spin of the SMM and the conduction-electron, which are recognized as the information bits $1$ and $0$. We demonstrate that the switching time depends on both the sequential tunneling gap $varepsilon_{se}$ and the spin-selection-rule allowed transition-energy $varepsilon_{trans}$, which can be tuned by the gate voltage. In particular, when the external bias voltage is turned off, in the cases of the unoccupied and doubly-occupied ground eigenstates, the time derivative of the transport current can be used to read out the SMMs two spin-state of stored information. Moreover, the tunneling strength of and the asymmetry of the SMM-electrode coupling have a strong influence on the switching time, but that have a slight influence on the readout time that being on the order of nanoseconds. Our results suggest a SMM-based memory device, and provide fundamental insight into the electrical controllable manipulation and readout of the SMMs two spin-state of stored information.
We propose an efficient mechanism for the operation of writing spin in a quantum dot, which is an ideal candidate for qubit. The idea is based on the Andreev reflection induced spin polarization (ARISP) in a ferromagnetic / quantum-dot / superconductor system. We find that on the resonance of Andreev reflection, the spin polarization of quantum dot strongly denpends on the magnetization of ferromagnetic electrode, and the sign of the spin polarization is controllable by bias voltage. In the presence of intradot Coulomb interaction, we show that ARISP effect can still survive as long as the charging energy is comparable to the superconducting gap. Detailed conditions and properties of ARISP are also discussed.
Helicity indicates the in-plane magnetic-moment swirling direction of a skyrmionic configuration. The ability to reverse the helicity of a skyrmionic bubble via purely electrical means has been predicted in frustrated magnetic systems, however its experimental observation has remained challenging. Here, we experimentally demonstrate the current-driven helicity reversal of the skyrmionic bubble in a nanostructured frustrated Fe3Sn2 magnet. The critical current density required to trigger the helicity reversal is 109 - 1010 A/m2, with a corresponding pulse-width varying from 1 {mu}s to 100 ns. Computational simulations reveal that both the pinning effect and dipole-dipole interaction play a crucial role in the helicity-reversal process.
We investigate theoretically the effects of intrinsic spin-relaxation on the spin-dependent transport through a single-molecule magnet (SMM), which is weakly coupled to ferromagnetic leads. The tunnel magnetoresistance (TMR) is obtained by means of the rate-equation approach including not only the sequential but also the cotunneling processes. It is shown that the TMR is strongly suppressed by the fast spin-relaxation in the sequential region and can vary from a large positive to slight negative value in the cotunneling region. Moreover, with an external magnetic field along the easy-axis of SMM, a large negative TMR is found when the relaxation strength increases. Finally, in the high bias voltage limit the TMR for the negative bias is slightly larger than its characteristic value of the sequential region, however it can become negative for the positive bias caused by the fast spin-relaxation.
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