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Register a new userMolecular Simulation of Fracture Dynamics of Symmetric Tilt Grain Boundaries in Graphene
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Atomistic simulations were utilized to obtain microscopic information of the elongation process in graphene sheets consisting of various embedded symmetric tilt grain boundaries (GBs). In contrast to pristine graphene, these GBs fractured in an extraordinary pattern under transverse uniaxial elongation in all but the largest misorientation angle case, which exhibited intermittent crack propagation and formed many stringy residual connections after quasi mechanical failure. The strings known as monoatomic carbon chains (MACCs), whose importance was recently highlighted, gradually extended to a maximum of a few nanometers as the elongation proceeded. These features, which critically affect the tensile stress and the shape of stress-strain curve, were observed in both armchair and zigzag-oriented symmetric tilt GBs. However, there exist remarkable differences in the population density and the achievable length of MACCs appearing after quasi mechanical failure which were higher in the zigzag-oriented GBs. In addition, the maximum stress and ultimate strain for armchair-oriented GBs were significantly greater than those of zigzag-oriented GBs in case of the largest misorientation angle while they were slightly smaller in other cases. The maximum stress was larger as the misorientation angle increased for both armchair and zigzag-oriented GBs ranging between 32~80 GPa, and the ultimate strains were between 0.06~0.11, the lower limit of which agrees very well with the experimental value of threshold strain beyond which mechanical failure often occurred in polycrystalline graphene.
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Previous simulation and experimental studies have shown that some grain boundaries (GBs) can couple to applied shear stresses and be moved by them, producing shear deformation of the lattice traversed by their motion. While this coupling effect has been well confirmed for symmetrical tilt GBs, little is known about the coupling ability of asymmetrical boundaries. In this work we apply a combination of molecular dynamics and phase field crystal simulations to investigate stress-driven motion of asymmetrical GBs between cubic crystals over the entire range of inclination angles. Our main findings are that the coupling effect exists for most of the asymmetrical GBs and that the coupling factor exhibits a non-trivial dependence on both the misorientation and inclination angles. This dependence is characterized by a discontinuous change of sign of the coupling factor, which reflects a transition between two different coupling modes over a narrow range of angles. Importantly, the magnitude of the coupling factor becomes large or divergent within this transition region, thereby giving rise to a sliding-like behavior. Our results are interpreted in terms of a diagram presenting the domains of existence of the two coupling modes and the transition region between them in the plane of misorientation and inclination angles. The simulations reveal some of the dislocation mechanisms responsible for the motion of asymmetrical tilt GBs. The results of this study compare favorably with existing experimental measurements and provide a theoretical ground for the design of future experiments.
We reveal that phononic thermal transport in graphene is not immune to grain boundaries (GBs) aligned along the direction of the temperature gradient. Non-equilibrium molecular dynamics simulations uncover a large reduction in the phononic thermal conductivity ($kappa_p$) along linear ultra-narrow GBs comprising periodically-repeating pentagon-heptagon dislocations. Greens function calculations and spectral energy density analysis indicate that $kappa_p$ is the complex manifestation of the periodic strain field, which behaves as a reflective diffraction grating with both diffuse and specular phonon reflections, and represents a source of anharmonic phonon-phonon scattering. Our findings provide new insights into the integrity of the phononic thermal transport in GB graphene.
Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most promising for technological applications. The electronic and mechanical properties of CVD-grown graphene depend in large part on the characteristics of the grain boundaries. However, the physical properties of these grain boundaries remain challenging to characterize directly and conveniently. Here, we show that it is possible to visualize and investigate the grain boundaries in CVD-grown graphene using an infrared nano-imaging technique. We harness surface plasmons that are reflected and scattered by the graphene grain boundaries, thus causing plasmon interference. By recording and analyzing the interference patterns, we can map grain boundaries for a large area CVD-grown graphene film and probe the electronic properties of individual grain boundaries. Quantitative analysis reveals that grain boundaries form electronic barriers that obstruct both electrical transport and plasmon propagation. The effective width of these barriers (~10-20 nm) depends on the electronic screening and it is on the order of the Fermi wavelength of graphene. These results uncover a microscopic mechanism that is responsible for the low electron mobility observed in CVD-grown graphene, and suggest the possibility of using electronic barriers to realize tunable plasmon reflectors and phase retarders in future graphene-based plasmonic circuits.
Graphene grain boundaries have attracted interest for their ability to host nearly dispersionless electronic bands and magnetic instabilities. Here, we employ quantum transport and universal conductance fluctuations (UCF) measurements to experimentally demonstrate a spontaneous breaking of time reversal symmetry (TRS) across individual GBs of chemical vapour deposited graphene. While quantum transport across the GBs indicate spin-scattering-induced dephasing, and hence formation of local magnetic moments, below $Tlesssim 4$ K, we observe complete lifting of TRS at high carrier densities ($n gtrsim 5times 10^{12}$cm$^{-2}$) and low temperature ($Tlesssim 2$ K). An unprecedented thirty times reduction in the UCF magnitude with increasing doping density further supports the possibility of an emergent frozen magnetic state at the GBs. Our experimental results suggest that realistic GBs of graphene can be a promising resource for new electronic phases and spin-based applications.
The magnetotransport properties of antidot lattices containing artificially designed grain boundaries have been measured. We find that the grain boundaries broaden the commensurability resonances and displace them anisotropically. These phenomena are unexpectedly weak but differ characteristically from isotropic, Gaussian disorder in the antidot positions. The observations are interpreted in terms of semiclassical trajectories which tend to localize along the grain boundaries within certain magnetic field intervals. Furthermore, our results indicate how the transport through superlattices generated by self-organizing templates may get influenced by grain boundaries.
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