No Arabic abstract
Previous simulation and experimental studies have shown that some grain boundaries (GBs) can couple to applied shear stresses and be moved by them, producing shear deformation of the lattice traversed by their motion. While this coupling effect has been well confirmed for symmetrical tilt GBs, little is known about the coupling ability of asymmetrical boundaries. In this work we apply a combination of molecular dynamics and phase field crystal simulations to investigate stress-driven motion of asymmetrical GBs between cubic crystals over the entire range of inclination angles. Our main findings are that the coupling effect exists for most of the asymmetrical GBs and that the coupling factor exhibits a non-trivial dependence on both the misorientation and inclination angles. This dependence is characterized by a discontinuous change of sign of the coupling factor, which reflects a transition between two different coupling modes over a narrow range of angles. Importantly, the magnitude of the coupling factor becomes large or divergent within this transition region, thereby giving rise to a sliding-like behavior. Our results are interpreted in terms of a diagram presenting the domains of existence of the two coupling modes and the transition region between them in the plane of misorientation and inclination angles. The simulations reveal some of the dislocation mechanisms responsible for the motion of asymmetrical tilt GBs. The results of this study compare favorably with existing experimental measurements and provide a theoretical ground for the design of future experiments.
Atomistic simulations were utilized to obtain microscopic information of the elongation process in graphene sheets consisting of various embedded symmetric tilt grain boundaries (GBs). In contrast to pristine graphene, these GBs fractured in an extraordinary pattern under transverse uniaxial elongation in all but the largest misorientation angle case, which exhibited intermittent crack propagation and formed many stringy residual connections after quasi mechanical failure. The strings known as monoatomic carbon chains (MACCs), whose importance was recently highlighted, gradually extended to a maximum of a few nanometers as the elongation proceeded. These features, which critically affect the tensile stress and the shape of stress-strain curve, were observed in both armchair and zigzag-oriented symmetric tilt GBs. However, there exist remarkable differences in the population density and the achievable length of MACCs appearing after quasi mechanical failure which were higher in the zigzag-oriented GBs. In addition, the maximum stress and ultimate strain for armchair-oriented GBs were significantly greater than those of zigzag-oriented GBs in case of the largest misorientation angle while they were slightly smaller in other cases. The maximum stress was larger as the misorientation angle increased for both armchair and zigzag-oriented GBs ranging between 32~80 GPa, and the ultimate strains were between 0.06~0.11, the lower limit of which agrees very well with the experimental value of threshold strain beyond which mechanical failure often occurred in polycrystalline graphene.
We present molecular-dynamic simulations of memory resistors (memristors) including the crystal field effects on mobile ionic species such as oxygen vacancies appearing during operation of the device. Vacancy distributions show different patterns depending on the ratio of a spatial period of the crystal field to a characteristic radius of the vacancy-vacancy interaction. There are signatures of the orientational order and of spatial voids in the vacancy distributions for some crystal field potentials. The crystal field stabilizes the patterns after they are formed, resulting in a non-volatile switching of the simulated devices.
We describe a molecular dynamics framework for the direct calculation of the short-ranged structural forces underlying grain-boundary premelting and grain-coalescence in solidification. The method is applied in a comparative study of (i) a Sigma 9 <115> 120 degress twist and (ii) a Sigma 9 <110> {411} symmetric tilt boundary in a classical embedded-atom model of elemental Ni. Although both boundaries feature highly disordered structures near the melting point, the nature of the temperature dependence of the width of the disordered regions in these boundaries is qualitatively different. The former boundary displays behavior consistent with a logarithmically diverging premelted layer thickness as the melting temperature is approached from below, while the latter displays behavior featuring a finite grain-boundary width at the melting point. It is demonstrated that both types of behavior can be quantitatively described within a sharp-interface thermodynamic formalism involving a width-dependent interfacial free energy, referred to as the disjoining potential. The disjoining potential for boundary (i) is calculated to display a monotonic exponential dependence on width, while that of boundary (ii) features a weak attractive minimum. The results of this work are discussed in relation to recent simulation and theoretical studies of the thermodynamic forces underlying grain-boundary premelting.
Structural transformations at interfaces are of profound fundamental interest as complex examples of phase transitions in low-dimensional systems. Despite decades of extensive research, no compelling evidence exists for structural transformations in high-angle grain boundaries in elemental systems. Here we show that the critical impediment to observations of such phase transformations in atomistic modeling has been rooted in inadequate simulation methodology. The proposed new methodology allows variations in atomic density inside the grain boundary and reveals multiple grain boundary phases with different atomic structures. Reversible first-order transformations between such phases are observed by varying temperature or injecting point defects into the boundary region. Due to the presence of multiple metastable phases, grain boundaries can absorb significant amounts of point defects created inside the material by processes such as irradiation. We propose a novel mechanism of radiation damage healing in metals which may guide further improvements in radiation resistance of metallic materials through grain boundary engineering.
We address a three-dimensional, coarse-grained description of dislocation networks at grain boundaries between rotated crystals. The so-called amplitude expansion of the phase-field crystal model is exploited with the aid of finite element method calculations. This approach allows for the description of microscopic features, such as dislocations, while simultaneously being able to describe length scales that are orders of magnitude larger than the lattice spacing. Moreover, it allows for the direct description of extended defects by means of a scalar order parameter. The versatility of this framework is shown by considering both fcc and bcc lattice symmetries and different rotation axes. First, the specific case of planar, twist grain boundaries is illustrated. The details of the method are reported and the consistency of the results with literature is discussed. Then, the dislocation networks forming at the interface between a spherical, rotated crystal embedded in an unrotated crystalline structure, are shown. Although explicitly accounting for dislocations which lead to an anisotropic shrinkage of the rotated grain, the extension of the spherical grain boundary is found to decrease linearly over time in agreement with the classical theory of grain growth and recent atomistic investigations. It is shown that the results obtained for a system with bcc symmetry agree very well with existing results, validating the methodology. Furthermore, fully original results are shown for fcc lattice symmetry, revealing the generality of the reported observations.