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Register a new userMagnetoresistance of antidot lattices with grain boundaries
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The magnetotransport properties of antidot lattices containing artificially designed grain boundaries have been measured. We find that the grain boundaries broaden the commensurability resonances and displace them anisotropically. These phenomena are unexpectedly weak but differ characteristically from isotropic, Gaussian disorder in the antidot positions. The observations are interpreted in terms of semiclassical trajectories which tend to localize along the grain boundaries within certain magnetic field intervals. Furthermore, our results indicate how the transport through superlattices generated by self-organizing templates may get influenced by grain boundaries.
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In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skipping orbits encircling an antidot with a particular number of bounds.
We report on the fabrication and characterization of a device which allows the formation of an antidot lattice (ADL) using only electrostatic gating. The antidot potential and Fermi energy of the system can be tuned independently. Well defined commensurability features in magnetoresistance as well as magnetothermopower are obsereved. We show that the thermopower can be used to efficiently map out the potential landscape of the ADL.
Graphene samples can have a very high carrier mobility if influences from the substrate and the environment are minimized. Embedding a graphene sheet into a heterostructure with hexagonal boron nitride (hBN) on both sides was shown to be a particularly efficient way of achieving a high bulk mobility. Nanopatterning graphene can add extra damage and drastically reduce sample mobility by edge disorder. Preparing etched graphene nanostructures on top of an hBN substrate instead of SiO2 is no remedy, as transport characteristics are still dominated by edge roughness. Here we show that etching fully encapsulated graphene on the nanoscale is more gentle and the high mobility can be preserved. To this end, we prepared graphene antidot lattices where we observe magnetotransport features stemming from ballistic transport. Due to the short lattice period in our samples we can also explore the boundary between the classical and the quantum transport regime.
Abnormal magnetoresistance behavior is found in superconducting Nb films perforated with rectangular arrays of antidots (holes). Generally magnetoresistance were always found to increase with increasing magnetic field. Here we observed a reversal of this behavior for particular in low temperature or current density. This phenomenon is due to a strong caging effect which interstitial vortices are strongly trapped among pinned multivortices.
We reveal that phononic thermal transport in graphene is not immune to grain boundaries (GBs) aligned along the direction of the temperature gradient. Non-equilibrium molecular dynamics simulations uncover a large reduction in the phononic thermal conductivity ($kappa_p$) along linear ultra-narrow GBs comprising periodically-repeating pentagon-heptagon dislocations. Greens function calculations and spectral energy density analysis indicate that $kappa_p$ is the complex manifestation of the periodic strain field, which behaves as a reflective diffraction grating with both diffuse and specular phonon reflections, and represents a source of anharmonic phonon-phonon scattering. Our findings provide new insights into the integrity of the phononic thermal transport in GB graphene.
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