No Arabic abstract
The anisotropic physical properties of single crystals of orthorhombic PtSn4 are reported for magnetic fields up to 140 kOe, applied parallel and perpendicular to the crystallographic b-axis. The magnetic susceptibility has an approximately temperature independent behavior and reveals an anisotropy between ac-plane and b-axis. Clear de Haas-van Alphen oscillations in fields as low as 5 kOe and at temperatures as high as 30 K were detected in magnetization isotherms. The thermoelectric power and resistivity of PtSn4 show the strong temperature and magnetic field dependencies. A change of the thermoelectric power at H = 140 kOe is observed as high as ~ 50 mu-V/K. Single crystals of PtSn4 exhibit very large transverse magnetoresistance of ~ 5x10^5% for the ac-plane and of ~ 1.4x10^5% for the b-axis resistivity at 1.8 K and 140 kOe, as well as pronounced Shubnikov-de Haas oscillations. The magnetoresistance of PtSn4 appears to obey Kohlers rule in the temperature and field range measured. The Hall resistivity shows a linear temperature dependence at high temperatures followed by a sign reversal around 25 K which is consistent with thermoelectric power measurements. The observed quantum oscillations and band structure calculations indicate that PtSn4 has three dimensional Fermi surfaces.
Starting from a recently proposed comprehensive theory for the high-Tc superconductivity in cuprates, we derive a general analytic expression for the planar resistivity, in the presence of an applied external magnetic field $textbf{H}$ and explore its consequences in the different phases of these materials. As an initial probe of our result, we show it compares very well with experimental data for the resistivity of LSCO at different values of the applied field. We also apply our result to Bi2201 and show that the magnetoresistivity in the strange metal phase of this material, exhibits the $H^2$ to $H$ crossover, as we move from the weak to the strong field regime. Yet, despite of that, the magnetoresistivity does not present a quadrature scaling. Remarkably, the resistivity H-field derivative does scale as a function of $frac{H}{T}$, in complete agreement with recent magneto-transport measurements made in the strange metal phase of cuprates cite{Hussey2020}. We, finally, address the issue of the $T$-power-law dependence of the resistivity of overdoped cuprates and compare our results with experimental data for Tl2201. We show that this provides a simple method to determine whether the quantum critical point associated to the pseudogap temperature $T^*(x)$ belongs to the SC dome or not.
Electrical conductivity, thermopower and magnetic properties of Fe-intercalated Fe0.33VSe2 has been reported between 4.2K - 300K. We observe a first order transition in the resistivity of the sintered pellets around 160K on cooling. The electronic properties including the transitional hysteresis in the resistance anomaly (from 80K-160K) are found to be very sensitive to the structural details of the samples, which were prepared in different annealing conditions. The thermopower results on the sintered pellets are reported between 10K - 300K. The magnetic measurements between 2K - 300K and up to 14 Tesla field show the absence of any magnetic ordering in Fe0.33VSe2. The magnetic moment per Fe -atom at room temperature (between 1.4 to 1.7 Bohr Magneton) is much lower than in previously reported anti-ferromagnetic FeV2Se4. Furthermore, the Curie constant shows a rapid and continuous reduction and combined with the high field magnetization result at 2K suggests a rapid decrease in the paramagnetic moments on cooling to low temperatures and the absence of any magnetic order in Fe0.33VSe2 at low temperatures.
Nanostructured La0.67Ca0.33MnO3 (NS-LCMO) was formed by pulsed-laser deposition on the surface of porous Al2O3. The resistance peak temperature (Tp) of the NS-LCMO increases with increasing average thickness of the films, while their Curie temperatures (Tc) remain unchanged. The coercive field of the samples increases with decreasing film thickness and its temperature dependence can be well described by Hc(T) = Hc(0)[1-(T/TB)1/2]. A large magnetoresistance and strong memory effect were observed for the NS-LCMO. The results are discussed in terms of the size effect, Coulomb blockade and magnetic tunneling effect. This work also demonstrates a new way to get nanostructured manganites.
We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the implantation process in the physical properties of the films. CAFM images show regions with different conductivity values, probably due to the random distribution of point defect or inhomogeneous changes of the local Mn3+/4+ ratio to reduce lattice strains of the irradiated areas. The transport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition can be described in the frame of a percolative model. Disorder increases the distance between conducting regions, lowering the observed TMI. Point defect disorder increases localization of the carriers due to increased disorder and locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign of low field magnetoresistance was found. Point defect disorder decreases the system magnetization but doesn t seem to change the magnetic transition temperature. As a consequence, an important decoupling between the magnetic and the metal-insulator transition is found for ion irradiated films as opposed to the classical double exchange model scenario.
The effects of Cu-doping on the structural, magnetic, and transport properties of La0.7Sr0.3Mn1-xCuxO3 (0 < x < 0.20) have been studied using neutron diffraction, magnetization and magnetoresistance (MR) measurements. All samples show the rhombohedral structure with the R3c space-group from 10K to room temperature (RT). Neutron diffraction data suggest that some of the Cu ions have a Cu3+ state in these compounds. The substitution of Mn by Cu affects the Mn-O bond length and Mn-O-Mn bond angle resulting from the minimization of the distortion of the MnO6 octahedron. Resistivity measurements show that a metal to insulator transition occurs for the x more than 0.15 samples. The x = 0.15 sample shows the highest MR(_80%), which might result from the co-existence of Cu3+/Cu2+ and the dilution effect of Cu-doping on the double exchange interaction.