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Register a new userTrapping Surface Electrons on Graphene Layers and Islands
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We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy, dispersion, and lifetime of the lowest three image-potential states are measured. In addition, the weak interaction between Ir and graphene permits observation of resonant transitions from an unquenched Shockley-type surface state of the Ir substrate to graphene/Ir image-potential states. The image-potential-state lifetimes are comparable to those of mid-gap clean metal surfaces. Evidence of localization of the excited electrons on single-atom-layer graphene islands is provided by coverage-dependent measurements.
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We present a study of graphene/substrate interactions on UHV-grown graphene islands with minimal surface contamination using emph{in situ} low-temperature scanning tunneling microscopy (STM). We compare the physical and electronic structure of the sample surface with atomic spatial resolution on graphene islands versus regions of bare Cu(111) substrate. We find that the Rydberg-like series of image potential states is shifted toward lower energy over the graphene islands relative to Cu(111), indicating a decrease in the local work function, and the resonances have a much smaller linewidth, indicating reduced coupling to the bulk. In addition, we show the dispersion of the occupied Cu(111) Shockley surface state is influenced by the graphene layer, and both the band edge and effective mass are shifted relative to bare Cu(111).
We have determined the magnetic properties of epitaxially grown Dy islands on graphene/SiC(0001) that are passivated by a gold film (deposited in the ultra-high vacuum growth chamber) for {it ex-situ} X-ray magnetic circular dichroism (XMCD). Our sum-rule analysis of the Dy $M_{4,5}$ XMCD spectra at low temperatures ($T=15$ K) as a function of magnetic field assuming Dy$^{3+}$ (spin configuration $^6H_{15/2}$) indicate that the projection of the magnetic moment along an applied magnetic field of 5 T is 3.5(3) $mu_B$. Temperature dependence of the magnetic moment (extracted from the $M_5$ XMCD spectra) shows an onset of a change in magnetic moment at about 175 K in proximity of the transition from paramagnetic to helical magnetic structure at $T_{rm H} =179$ K in bulk Dy. No feature at the vicinity of the ferromagnetic transition of hcp bulk Dy at $T_{rm c}$ = 88 K is observed. However, below $sim$130 K, the inverse magnetic moment (extracted from the XMCD) is linear in temperature as commonly expected from a paramagnetic system suggesting different behavior of Dy nano-island than bulk Dy.
We demonstrate the trapping of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transport along a gate-modified mesa edge in contrast to an effective decay of excess energy for the loop around a neighboring, mesa-confined node, enabling high-fidelity trapping. Measuring the full counting statistics via single-charge detection yields the trapping (and escape) probabilities of electrons scattered (and excited) within the node. Energetic and arrival-time distributions of captured electron wave packets are characterized by modulating tunnel barrier transmission.
We study the magnetic properties of nanometer-sized graphene structures with triangular and hexagonal shapes terminated by zig-zag edges. We discuss how the shape of the island, the imbalance in the number of atoms belonging to the two graphene sublattices, the existence of zero-energy states, and the total and local magnetic moment are intimately related. We consider electronic interactions both in a mean-field approximation of the one-orbital Hubbard model and with density functional calculations. Both descriptions yield values for the ground state total spin, $S$, consistent with Liebs theorem for bipartite lattices. Triangles have a finite $S$ for all sizes whereas hexagons have S=0 and develop local moments above a critical size of $approx 1.5$ nm.
We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum (UHV) decomposition of ethylene on Cu(111). We characterize these defects through a survey of their apparent heights, atomic-resolution imaging, and detailed tunneling spectroscopy. Bright defects that occur only in graphene regions are identified as C site point defects in the graphene lattice and are most likely single C vacancies. Dark defect types are observed in both graphene and Cu regions, and are likely point defects in the Cu surface. We also present data showing the importance of bias and tip termination to the appearance of the defects in STM images and the ability to achieve atomic resolution. Finally, we present tunneling spectroscopy measurements probing the influence of point defects on the local electronic landscape of graphene islands.
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