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Register a new userMagnetic properties of Dy nano-islands on graphene
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We have determined the magnetic properties of epitaxially grown Dy islands on graphene/SiC(0001) that are passivated by a gold film (deposited in the ultra-high vacuum growth chamber) for {it ex-situ} X-ray magnetic circular dichroism (XMCD). Our sum-rule analysis of the Dy $M_{4,5}$ XMCD spectra at low temperatures ($T=15$ K) as a function of magnetic field assuming Dy$^{3+}$ (spin configuration $^6H_{15/2}$) indicate that the projection of the magnetic moment along an applied magnetic field of 5 T is 3.5(3) $mu_B$. Temperature dependence of the magnetic moment (extracted from the $M_5$ XMCD spectra) shows an onset of a change in magnetic moment at about 175 K in proximity of the transition from paramagnetic to helical magnetic structure at $T_{rm H} =179$ K in bulk Dy. No feature at the vicinity of the ferromagnetic transition of hcp bulk Dy at $T_{rm c}$ = 88 K is observed. However, below $sim$130 K, the inverse magnetic moment (extracted from the XMCD) is linear in temperature as commonly expected from a paramagnetic system suggesting different behavior of Dy nano-island than bulk Dy.
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We study the magnetic properties of nanometer-sized graphene structures with triangular and hexagonal shapes terminated by zig-zag edges. We discuss how the shape of the island, the imbalance in the number of atoms belonging to the two graphene sublattices, the existence of zero-energy states, and the total and local magnetic moment are intimately related. We consider electronic interactions both in a mean-field approximation of the one-orbital Hubbard model and with density functional calculations. Both descriptions yield values for the ground state total spin, $S$, consistent with Liebs theorem for bipartite lattices. Triangles have a finite $S$ for all sizes whereas hexagons have S=0 and develop local moments above a critical size of $approx 1.5$ nm.
We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy, dispersion, and lifetime of the lowest three image-potential states are measured. In addition, the weak interaction between Ir and graphene permits observation of resonant transitions from an unquenched Shockley-type surface state of the Ir substrate to graphene/Ir image-potential states. The image-potential-state lifetimes are comparable to those of mid-gap clean metal surfaces. Evidence of localization of the excited electrons on single-atom-layer graphene islands is provided by coverage-dependent measurements.
The synthesis as well as structural, multiferroic and optical characterization of Dy doped BiFeO$_3$ multiferroic ceramic are presented. Bulk polycrystalline Bi$_{0.9}$Dy$_{0.1}$FeO$_3$ sample is synthesized by solid state reaction, while their nano counterparts are prepared using ultrasonic probe sonication technique. Significant improvement of phase purity in the as synthesized samples is observed after the doping of Dy both in bulk Bi$_{0.9}$Dy$_{0.1}$FeO$_3$ sample and corresponding nanoparticles as evidenced from Rietveld refinement. Magnetization measurements using SQUID magnetometer exhibit enhanced magnetic properties for Dy doped bulk Bi$_{0.9}$Dy$_{0.1}$FeO$_3$ ceramic compared to their nanostructured counterparts as well as undoped BiFeO$_3$. Within the applied field range, saturation polarization is observed for Bi$_{0.9}$Dy$_{0.1}$FeO$_3$ bulk ceramic only. As a result, intrinsic ferroelectric behavior is obtained just for this sample. Optical bandgap measurements reveal lower bandgap for Dy doped bulk Bi$_{0.9}$Dy$_{0.1}$FeO$_3$ ceramic compared to that of corresponding nanoparticles and undoped BiFeO$_3$. The outcome of this investigation demonstrates the potential of Dy as a doping element in BiFeO$_3$ that provides a bulk ceramic material with improved multiferroic and optical properties compared to those of corresponding nanoparticles which involve rigorous synthesis procedure.
Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is imperative to explore the conductive domain walls in small confined systems while earlier investigations have hitherto focused on thin films or bulk single crystals, noting that the size-confined effects will certainly modulate seriously the domain structure and wall transport. Here, we demonstrate an observation and manipulation of conductive domain walls confined within small BiFeO3 nano-islands aligned in high density arrays. Using conductive atomic force microscopy (CAFM), we are able to distinctly visualize various types of conductive domain walls, including the head-to-head charged walls (CDWs), zigzag walls (zigzag-DWs), and typical 71{deg} head-to-tail neutral walls (NDWs). The CDWs exhibit remarkably enhanced metallic conductivity with current of ~ nA order in magnitude and 104 times larger than that inside domains (0.01 ~ 0.1 pA), while the semiconducting NDWs allow also much smaller current ~ 10 pA than the CDWs. The substantially difference in conductivity for dissimilar walls enables additional manipulations of various wall conduction states for individual addressable nano-islands via electrically tuning of their domain structures. A controllable writing of four distinctive states by applying various scanning bias voltages is achieved, offering opportunities for developing multilevel high density memories.
We present a study of graphene/substrate interactions on UHV-grown graphene islands with minimal surface contamination using emph{in situ} low-temperature scanning tunneling microscopy (STM). We compare the physical and electronic structure of the sample surface with atomic spatial resolution on graphene islands versus regions of bare Cu(111) substrate. We find that the Rydberg-like series of image potential states is shifted toward lower energy over the graphene islands relative to Cu(111), indicating a decrease in the local work function, and the resonances have a much smaller linewidth, indicating reduced coupling to the bulk. In addition, we show the dispersion of the occupied Cu(111) Shockley surface state is influenced by the graphene layer, and both the band edge and effective mass are shifted relative to bare Cu(111).
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