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Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 Mott insulator

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 Added by Yayu Wang
 Publication date 2021
  fields Physics
and research's language is English




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We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of spectral weight from high energy Hubbard band to low energy in-gap state creates a broad peak and nearly V-shaped gap around the Fermi level. The peak position shows a sudden drop at distance around 4 a0 and then remains almost constant. The in-gap states exhibit peculiar spatial distributions depending on the configuration of the two dopants relative to the underlying Cu lattice. These results shed important new lights on the evolution of low energy electronic states when a few holes are doped into parent cuprates.



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227 - Cun Ye , Peng Cai , Runze Yu 2012
Although the mechanism of superconductivity in the cuprates remains elusive, it is generally agreed that at the heart of the problem is the physics of doped Mott insulators. The cuprate parent compound has one unpaired electron per Cu site, and is predicted by band theory to be a half-filled metal. The strong onsite Coulomb repulsion, however, prohibits electron hopping between neighboring sites and leads to a Mott insulator ground state with antiferromagnetic (AF) ordering. Charge carriers doped into the CuO2 plane destroy the insulating phase and superconductivity emerges as the carrier density is sufficiently high. The natural starting point for tackling high Tc superconductivity is to elucidate the electronic structure of the parent Mott insulator and the behavior of a single doped charge. Here we use a scanning tunneling microscope to investigate the atomic scale electronic structure of the Ca2CuO2Cl2 parent Mott insulator of the cuprates. The full electronic spectrum across the Mott-Hubbard gap is uncovered for the first time, which reveals the particle-hole symmetric and spatially uniform Hubbard bands. A single electron donated by surface defect is found to create a broad in-gap electronic state that is strongly localized in space with spatial characteristics intimately related to the AF spin background. The unprecedented real space electronic structure of the parent cuprate sheds important new light on the origion of high Tc superconductivity from the doped Mott insulator perspective.
Unusual transport properties of superconducting (SC) materials, such as the under doped cuprates, low dimensional superconductors in strong magnetic fields, and insulating films near the Insulator Superconductor Transition (IST), have been attributed to the formation of inhomogeneous phases. Difficulty correlating the behaviors with observations of the inhomogeneities make these connections uncertain. Of primary interest here are proposals that insulating films near the IST, which show an activated resistance and giant positive magnetoresistance, contain islands of Cooper Pairs (CPs). Here we present evidence that these types of inhomogeneities are essential to such an insulating phase in amorphous Bi (a-Bi) films deposited on substrates patterned with nanometer-sized holes. The patterning induces film thickness variations, and corresponding coupling constant variations, that transform the composition of the insulator from localized electrons to CPs. Analyses near the thickness-tuned ISTs of films on nine different substrates show that weak links between SC islands dominate the transport. In particular, the ISTs all occur when the link resistance approaches the resistance quantum for pairs. These observations lead to a detailed picture of CPs localized by spatial variations of the superconducting coupling constant.
When periodicity of crystal is disturbed by atomic disorder, its electronic state becomes inhomogeneous and band dispersion is obscured. In case of Fe-based superconductors, disorder of chalcogen/pnictogen height causes disorder of Fe 3d level splitting. Here, we report an angle-resolved photoemission spectroscopy study on FeSe_1-xTe_x with the chalcogen height disorder, showing that the disorder affects the Fe 3d band dispersions in an orbital-selective way instead of simple obscuring effect. The reverse of the Fe 3d level splitting due to the chalcogen height difference causes the splitting of the hole band with Fe 3d x^2-y^2 character around the Gamma point.
Because the cuprate superconductors are doped Mott insulators, it would be advantageous to solve even a toy model that exhibits both Mottness and superconductivity. We consider the Hatsugai-Kohmoto model, an exactly solvable system that is a prototypical Mott insulator above a critical interaction strength at half filling. Upon doping or reducing the interaction strength, our exact calculations show that the system becomes a non-Fermi liquid metal with a superconducting instability. In the presence of a weak pairing interaction, the instability produces a thermal transition to a superconducting phase, which is distinct from the BCS state, as evidenced by a gap-to-transition temperature ratio exceeding the universal BCS limit. The elementary excitations of this superconductor are not Bogoliubov quasiparticles but rather superpositions of doublons and holons, composite excitations signaling that the superconducting ground state of the doped Mott insulator inherits the non-Fermi liquid character of the normal state. An unexpected feature of this model is that it exhibits a superconductivity-induced transfer of spectral weight from high to low energies as seen in the cuprates as well as a suppression of the superfluid density relative to that in BCS theory.
124 - W.Q. Chen , Z.Y. Weng 2004
We present a systematic study of spin dynamics in a superconducting ground state, which itself is a doped-Mott-insulator and can correctly reduce to an antiferromagnetic (AF) state at half-filling with an AF long-range order (AFLRO). Such a doped Mott insulator is described by a mean-field theory based on the phase string formulation of the t-J model. We show that the spin wave excitation in the AFLRO state at half-filling evolves into a resonancelike peak at a finite energy in the superconducting state, which is located around the AF wave vectors. The width of such a resonancelike peak in momentum space decides a spin correlation length scale which is inversely proportional to the square root of doping concentration, while the energy of the resonancelike peak scales linearly with the doping concentration at low doping. An important prediction of the theory is that, while the total spin sum rule is satisfied at different doping concentrations, the weight of the resonancelike peak does not vanish, but is continuously saturated to the weight of the AFLRO at zero-doping limit. Besides the low-energy resonancelike peak, we also show that the high-energy excitations still track the spin wave dispersion in momentum space, contributing to a significant portion of the total spin sum rule. The fluctuational effect beyond the mean-field theory is also examined, which is related to the broadening of the resonancelike peak in energy space. In particular, we discuss the incommensurability of the spin dynamics by pointing out that its visibility is strongly tied to the low-energy fluctuations below the resonancelike peak. We finally investigate the interlayer coupling effect on the spin dynamics as a function of doping, by considering a bilayer system.
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