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Register a new userTin telluride: a weakly co-elastic metal
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We report resonant ultrasound spectroscopy (RUS), dilatometry/magnetostriction, magnetotransport, magnetization, specific heat, and $^{119}$Sn Mossbauer spectroscopy measurements on SnTe and Sn$_{0.995}$Cr$_{0.005}$Te. Hall measurements at $T=77$ K indicate that our Bridgman-grown single crystals have a $p$-type carrier concentration of $3.4 times 10^{19}$ cm$^{-3}$ and that our Cr-doped crystals have an $n$-type concentration of $5.8 times 10^{22}$ cm$^{-3}$. Although our SnTe crystals are diamagnetic over the temperature range $2, text{K} leq T leq 1100, text{K}$, the Cr-doped crystals are room temperature ferromagnets with a Curie temperature of 294 K. For each sample type, three-terminal capacitive dilatometry measurements detect a subtle 0.5 micron distortion at $T_c approx 85$ K. Whereas our RUS measurements on SnTe show elastic hardening near the structural transition, pointing to co-elastic behavior, similar measurements on Sn$_{0.995}$Cr$_{0.005}$Te show a pronounced softening, pointing to ferroelastic behavior. Effective Debye temperature, $theta_D$, values of SnTe obtained from $^{119}$Sn Mossbauer studies show a hardening of phonons in the range 60--115K ($theta_D$ = 162K) as compared with the 100--300K range ($theta_D$ = 150K). In addition, a precursor softening extending over approximately 100 K anticipates this collapse at the critical temperature, and quantitative analysis over three decades of its reduced modulus finds $Delta C_{44}/C_{44}=A|(T-T_0)/T_0|^{-kappa}$ with $kappa = 0.50 pm 0.02 $, a value indicating a three-dimensional softening of phonon branches at a temperature $T_0 sim 75$ K, considerably below $T_c$. We suggest that the differences in these two types of elastic behaviors lie in the absence of elastic domain wall motion in the one case and their nucleation in the other.
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The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is assisted by Au catalysts, and their morphologies vary as a function of substrate position and temperature. Transmission electron microscopy characterization reveals the formation of amorphous surface in single crystalline nanowires. X-ray photoelectron spectroscopy studies suggest that the nanowire surface is composed of In2O3, SnO2, Te and TeO2 which can be readily removed by argon ion sputtering. Exposure of the cleaned nanowires to atmosphere yields rapid oxidation of the surface within only one minute. Characterizations of electrical conductivity {sigma}, thermopower S, and thermal conductivity k{appa} were performed on the same In-doped nanowire which shows suppressed {sigma} and k{appa} but enhanced S yielding an improved thermoelectric figure of merit ZT than the undoped SnTe.
Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to be 2D topological insulators and type-II Weyl semimetals. However, most of the studies on ditelluride atomic layers so far rely on the low-yield and time-consuming mechanical exfoliation method. Direct synthesis of large-scale monolayer ditellurides has not yet been achieved. Here, using the chemical vapor deposition (CVD) method, we demonstrate controlled synthesis of high-quality and atom-thin tellurides with lateral size over 300 {mu}m. We found that the as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscope (STEM). The low-temperature transport measurements revealed a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2. This work paves the way to the synthesis of atom-thin tellurides and also quantum spin Hall devices.
Results of resistivity, Hall effect, magnetoresistance, susceptibility and heat capacity measurements are presented for single crystals of indium-doped tin telluride with compositions Sn$_{.988-x}$In$_x$Te where $0 leq x leq 8.4 %$, along with microstructural analysis based on transmission electron microscopy. For small indium concentrations, $x leq 0.9 %$ the material does not superconduct above 0.3 K, and the transport properties are consistent with simple metallic behavior. For $x geq 2.7 %$ the material exhibits anomalous low temperature scattering and for $x geq 6.1 %$ bulk superconductivity is observed with critical temperatures close to 2 K. Intermediate indium concentrations $2.7% leq x leq 3.8%$ do not exhibit bulk superconductivity above 0.7 K. Susceptibility data indicate the absence of magnetic impurities, while magnetoresistance data are inconsistent with localization effects, leading to the conclusion that indium-doped SnTe is a candidate charge Kondo system, similar to thallium-doped PbTe.
The ferroelectric degenerate semiconductor Sn$_{1-delta}$Te exhibits superconductivity with critical temperatures, $T_c$, of up to 0.3 K for hole densities of order 10$^{21}$ cm$^{-3}$. When doped on the tin site with greater than $x_c$ $= 1.7(3)%$ indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for $x > x_c$ than for $x < x_c$. By examining the effect of In dopant atoms on both $T_c$ and the temperature of the ferroelectric structural phase transition, $T_{SPT}$, we show that phonon modes related to this transition are not responsible for this $T_c$ enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.
We report a combined theoretical and experimental study on TaIrTe4, a potential candidate of the minimal model of type-II Weyl semimetals. Unexpectedly, an intriguing node structure with twelve Weyl points and a pair of nodal lines protected by mirror symmetry was found by first-principle calculations, with its complex signatures such as the topologically non-trivial band crossings and topologically trivial Fermi arcs cross-validated by angle-resolved photoemission spectroscopy. Through external strain, the number of Weyl points can be reduced to the theoretical minimum of four, and the appearance of the nodal lines can be switched between different mirror planes in momentum space. The coexistence of tunable Weyl points and nodal lines establishes ternary transition-metal tellurides as a unique test ground for topological state characterization and engineering.
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